Optimizing kesterite solar cells from Cu 2 ZnSnS 4 to Cu 2 CdGe(S,Se) 4
Abstract
Kesterite solar cells, based on the prototypical absorber material Cu2ZnSnS4 (CZTS), are cheap, nontoxic, and chemically stable, thus rendering them promising, beyond-Si photovoltaic technologies. Their efficiencies, however, are limited by the formation of defects that decrease the short-circuit current by creating deep traps where nonradiative recombination of photoexcited charge carriers occurs via the Shockley–Read–Hall mechanism. To suppress the formation of these defects, specifically the most deleterious 2CuZn + SnZn antisite cluster, we devised an ion substitution strategy involving complete Cd- and Ge-substitution and partial selenization, ultimately arriving at the optimal composition, Cu2CdGeS3Se (CCdGSSe). Using density functional theory and ab initio thermodynamics, we predict that complete Cd- and Ge-substitution leads to a 125% increase in the formation energy of the deep-trap-inducing 2CuCd + GeCd. Additionally, 25% selenization optimizes the predicted band gap (1.43–1.47 eV, as calculated from a hybrid functional) with respect to the Shockley–Queisser limit. In addition to providing a practical and novel ion substitution strategy, we also elucidate the mechanisms of defect suppression and promotion by Ge and Se, highlighting the key role of the inert pair effect and metal-chalcogen bond covalency, respectively. As a result, due to its ideal thermodynamic and electronic characteristics, CCdGSSe should reinvigorate research onmore »
- Authors:
-
- Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, USA
- Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, USA, Office of the Chancellor and Department of Chemical and Biomolecular Engineering
- Publication Date:
- Research Org.:
- Princeton Univ., NJ (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1775164
- Alternate Identifier(s):
- OSTI ID: 1808067
- Grant/Contract Number:
- SC0002120
- Resource Type:
- Published Article
- Journal Name:
- Journal of Materials Chemistry. A
- Additional Journal Information:
- Journal Name: Journal of Materials Chemistry. A Journal Volume: 9 Journal Issue: 15; Journal ID: ISSN 2050-7488
- Publisher:
- Royal Society of Chemistry (RSC)
- Country of Publication:
- United Kingdom
- Language:
- English
- Subject:
- 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 42 ENGINEERING; Solar cells; kesterite; CZTS; defects; ion substitution; density functional theory; inert pair effect
Citation Formats
Wexler, Robert B., Gautam, Gopalakrishnan Sai, and Carter, Emily A. Optimizing kesterite solar cells from Cu 2 ZnSnS 4 to Cu 2 CdGe(S,Se) 4. United Kingdom: N. p., 2021.
Web. doi:10.1039/D0TA11603C.
Wexler, Robert B., Gautam, Gopalakrishnan Sai, & Carter, Emily A. Optimizing kesterite solar cells from Cu 2 ZnSnS 4 to Cu 2 CdGe(S,Se) 4. United Kingdom. https://doi.org/10.1039/D0TA11603C
Wexler, Robert B., Gautam, Gopalakrishnan Sai, and Carter, Emily A. Tue .
"Optimizing kesterite solar cells from Cu 2 ZnSnS 4 to Cu 2 CdGe(S,Se) 4". United Kingdom. https://doi.org/10.1039/D0TA11603C.
@article{osti_1775164,
title = {Optimizing kesterite solar cells from Cu 2 ZnSnS 4 to Cu 2 CdGe(S,Se) 4},
author = {Wexler, Robert B. and Gautam, Gopalakrishnan Sai and Carter, Emily A.},
abstractNote = {Kesterite solar cells, based on the prototypical absorber material Cu2ZnSnS4 (CZTS), are cheap, nontoxic, and chemically stable, thus rendering them promising, beyond-Si photovoltaic technologies. Their efficiencies, however, are limited by the formation of defects that decrease the short-circuit current by creating deep traps where nonradiative recombination of photoexcited charge carriers occurs via the Shockley–Read–Hall mechanism. To suppress the formation of these defects, specifically the most deleterious 2CuZn + SnZn antisite cluster, we devised an ion substitution strategy involving complete Cd- and Ge-substitution and partial selenization, ultimately arriving at the optimal composition, Cu2CdGeS3Se (CCdGSSe). Using density functional theory and ab initio thermodynamics, we predict that complete Cd- and Ge-substitution leads to a 125% increase in the formation energy of the deep-trap-inducing 2CuCd + GeCd. Additionally, 25% selenization optimizes the predicted band gap (1.43–1.47 eV, as calculated from a hybrid functional) with respect to the Shockley–Queisser limit. In addition to providing a practical and novel ion substitution strategy, we also elucidate the mechanisms of defect suppression and promotion by Ge and Se, highlighting the key role of the inert pair effect and metal-chalcogen bond covalency, respectively. As a result, due to its ideal thermodynamic and electronic characteristics, CCdGSSe should reinvigorate research on kesterite-based solar cells, optimizing the rich materials space afforded by ion substitution and post-quinary compositions.},
doi = {10.1039/D0TA11603C},
journal = {Journal of Materials Chemistry. A},
number = 15,
volume = 9,
place = {United Kingdom},
year = {Tue Apr 20 00:00:00 EDT 2021},
month = {Tue Apr 20 00:00:00 EDT 2021}
}
https://doi.org/10.1039/D0TA11603C
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