Photocarrier Dynamics in TlGaS2 Nanoflakes and van der Waals Heterostructures with Hexagonal Boron Nitride and WS2 Nanoflakes: Implications for Optoelectronic Applications
Abstract
We present an experimental investigation on photocarrier dynamics in a TlGaS2 bulk crystal and its heterostructures with hexagonal BN and WS2. The samples were obtained by mechanical exfoliation and dry transfer techniques. The photocarrier dynamics was monitored by a transient absorption technique. We observed a direct optical transition of about 555 nm in the TlGaS2 crystal. By utilizing transient absorption of that transition, we obtained a hot-carrier energy relaxation time of less than 1 ps and a carrier lifetime of about 300 ps in TlGaS2 at room temperature. In the hexagonal-BN-TlGaS2 heterostructure, the photocarrier dynamics was similar to that in TlGaS2, indicating the type-I band alignment of this structure with both band extremes located in TlGaS2. In the monolayer WS2-TlGaS2 heterostructure, we observed charge transfer from TlGaS2 to WS2 and an extended lifetime of the transferred carriers in WS2. Here, these results introduce TlGaS2 as a promising layered material for developing two-dimensional van der Waals materials that can be combined with other two-dimensional materials for various optoelectronic devices.
- Authors:
-
[1];
[3]
- Beijing Jiaotong Univ. (China)
- Beijing Univ. of Chemical Technology (China)
- Univ. of Kansas, Lawrence, KS (United States)
- Publication Date:
- Research Org.:
- Univ. of Kansas, Lawrence, KS (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1772341
- Grant/Contract Number:
- SC0020995
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ACS Applied Nano Materials
- Additional Journal Information:
- Journal Volume: 3; Journal Issue: 9; Journal ID: ISSN 2574-0970
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; TlGaS2; layered materials; transient absorption; photocarrier dynamics; heterostructure; charge transfer; two dimensional materials; probes
Citation Formats
Fu, Yang, He, Dawei, He, Jiaqi, Han, Xiuxiu, Bai, Jinxuan, Wang, Yongsheng, and Zhao, Hui. Photocarrier Dynamics in TlGaS2 Nanoflakes and van der Waals Heterostructures with Hexagonal Boron Nitride and WS2 Nanoflakes: Implications for Optoelectronic Applications. United States: N. p., 2020.
Web. doi:10.1021/acsanm.0c01448.
Fu, Yang, He, Dawei, He, Jiaqi, Han, Xiuxiu, Bai, Jinxuan, Wang, Yongsheng, & Zhao, Hui. Photocarrier Dynamics in TlGaS2 Nanoflakes and van der Waals Heterostructures with Hexagonal Boron Nitride and WS2 Nanoflakes: Implications for Optoelectronic Applications. United States. https://doi.org/10.1021/acsanm.0c01448
Fu, Yang, He, Dawei, He, Jiaqi, Han, Xiuxiu, Bai, Jinxuan, Wang, Yongsheng, and Zhao, Hui. Thu .
"Photocarrier Dynamics in TlGaS2 Nanoflakes and van der Waals Heterostructures with Hexagonal Boron Nitride and WS2 Nanoflakes: Implications for Optoelectronic Applications". United States. https://doi.org/10.1021/acsanm.0c01448. https://www.osti.gov/servlets/purl/1772341.
@article{osti_1772341,
title = {Photocarrier Dynamics in TlGaS2 Nanoflakes and van der Waals Heterostructures with Hexagonal Boron Nitride and WS2 Nanoflakes: Implications for Optoelectronic Applications},
author = {Fu, Yang and He, Dawei and He, Jiaqi and Han, Xiuxiu and Bai, Jinxuan and Wang, Yongsheng and Zhao, Hui},
abstractNote = {We present an experimental investigation on photocarrier dynamics in a TlGaS2 bulk crystal and its heterostructures with hexagonal BN and WS2. The samples were obtained by mechanical exfoliation and dry transfer techniques. The photocarrier dynamics was monitored by a transient absorption technique. We observed a direct optical transition of about 555 nm in the TlGaS2 crystal. By utilizing transient absorption of that transition, we obtained a hot-carrier energy relaxation time of less than 1 ps and a carrier lifetime of about 300 ps in TlGaS2 at room temperature. In the hexagonal-BN-TlGaS2 heterostructure, the photocarrier dynamics was similar to that in TlGaS2, indicating the type-I band alignment of this structure with both band extremes located in TlGaS2. In the monolayer WS2-TlGaS2 heterostructure, we observed charge transfer from TlGaS2 to WS2 and an extended lifetime of the transferred carriers in WS2. Here, these results introduce TlGaS2 as a promising layered material for developing two-dimensional van der Waals materials that can be combined with other two-dimensional materials for various optoelectronic devices.},
doi = {10.1021/acsanm.0c01448},
journal = {ACS Applied Nano Materials},
number = 9,
volume = 3,
place = {United States},
year = {Thu Aug 06 00:00:00 EDT 2020},
month = {Thu Aug 06 00:00:00 EDT 2020}
}
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