Thickness-Dependent Interlayer Charge Transfer in MoSe2/MoS2 Heterostructures Studied by Femtosecond Transient Absorption Measurements

Zheng, Ting; Valencia-Acuna, Pavel; Zereshki, Peymon; Beech, Katherine M.; Deng, Lier; Ni, Zhenhua; Zhao, Hui

doi:10.1021/acsami.0c18268

Title: Thickness-Dependent Interlayer Charge Transfer in MoSe₂/MoS₂ Heterostructures Studied by Femtosecond Transient Absorption Measurements

Abstract

We report observations of a strong thickness dependence for charge transfer (CT) from MoSe₂ to MoS₂, as evidenced by transient absorption measurements. By time-resolving CT from MoSe₂ monolayers (1Ls) to MoS₂ flakes of varying thicknesses, including 1L, bilayer (2L), and trilayer (3L), we find that the CT time is several picoseconds in the 1L-MoSe₂/3L-MoS₂ heterostructure, which is much longer than that of 1L-MoSe₂/1L-MoS₂ and 1L-MoSe₂/2L-MoS₂ heterostructures. In addition, the recombination lifetime of the interlayer excitons in the 1L/3L heterostructure is several times longer than that of 1L/1L and 1L/2L heterostructures, reaching 800 ps. Furthermore, we show that a prepulse can reduce the CT time and enhance the interlayer exciton recombination in the 1L/3L heterostructure. Furthermore, these findings illustrate that layer thickness can be an important parameter to control the CT property of van der Waals heterostructures. These experimental results also provide important information for further refining the understanding of the physical mechanisms of CT in van der Waals heterostructures.

Authors:

Zheng, Ting ^[1]; Valencia-Acuna, Pavel ^[2]; Zereshki, Peymon ^[2]; Beech, Katherine M. ^[2]; Deng, Lier ^[2];

^[3];

^[2]

Southeast Univ., Nanjing (China); Univ. of Kansas, Lawrence, KS (United States)
Univ. of Kansas, Lawrence, KS (United States)
Southeast Univ., Nanjing (China)

Publication Date:: Sun Jan 31 00:00:00 EST 2021

Research Org.:: Univ. of Kansas, Lawrence, KS (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1772339

Grant/Contract Number:: SC0020995

Resource Type:: Accepted Manuscript

Journal Name:: ACS Applied Materials and Interfaces

Additional Journal Information:: Journal Volume: 13; Journal Issue: 5; Journal ID: ISSN 1944-8244

Publisher:: American Chemical Society (ACS)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; two-dimensional material; transition-metal dichalcogenide; van der Waals heterostructure; charge transfer; transient absorption; thickness; layers; optical properties; probes

Citation Formats


                    Zheng, Ting, Valencia-Acuna, Pavel, Zereshki, Peymon, Beech, Katherine M., Deng, Lier, Ni, Zhenhua, and Zhao, Hui. Thickness-Dependent Interlayer Charge Transfer in MoSe2/MoS2 Heterostructures Studied by Femtosecond Transient Absorption Measurements.  United States: N. p., 2021. 
Web.  doi:10.1021/acsami.0c18268.

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                    Zheng, Ting, Valencia-Acuna, Pavel, Zereshki, Peymon, Beech, Katherine M., Deng, Lier, Ni, Zhenhua, & Zhao, Hui. Thickness-Dependent Interlayer Charge Transfer in MoSe2/MoS2 Heterostructures Studied by Femtosecond Transient Absorption Measurements.  United States.  https://doi.org/10.1021/acsami.0c18268

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                    Zheng, Ting, Valencia-Acuna, Pavel, Zereshki, Peymon, Beech, Katherine M., Deng, Lier, Ni, Zhenhua, and Zhao, Hui. Sun .  
"Thickness-Dependent Interlayer Charge Transfer in MoSe2/MoS2 Heterostructures Studied by Femtosecond Transient Absorption Measurements".  United States.  https://doi.org/10.1021/acsami.0c18268.  https://www.osti.gov/servlets/purl/1772339.

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@article{osti_1772339,

  title        = {Thickness-Dependent Interlayer Charge Transfer in MoSe2/MoS2 Heterostructures Studied by Femtosecond Transient Absorption Measurements},

  author       = {Zheng, Ting and Valencia-Acuna, Pavel and Zereshki, Peymon and Beech, Katherine M. and Deng, Lier and Ni, Zhenhua and Zhao, Hui},

  abstractNote = {We report observations of a strong thickness dependence for charge transfer (CT) from MoSe2 to MoS2, as evidenced by transient absorption measurements. By time-resolving CT from MoSe2 monolayers (1Ls) to MoS2 flakes of varying thicknesses, including 1L, bilayer (2L), and trilayer (3L), we find that the CT time is several picoseconds in the 1L-MoSe2/3L-MoS2 heterostructure, which is much longer than that of 1L-MoSe2/1L-MoS2 and 1L-MoSe2/2L-MoS2 heterostructures. In addition, the recombination lifetime of the interlayer excitons in the 1L/3L heterostructure is several times longer than that of 1L/1L and 1L/2L heterostructures, reaching 800 ps. Furthermore, we show that a prepulse can reduce the CT time and enhance the interlayer exciton recombination in the 1L/3L heterostructure. Furthermore, these findings illustrate that layer thickness can be an important parameter to control the CT property of van der Waals heterostructures. These experimental results also provide important information for further refining the understanding of the physical mechanisms of CT in van der Waals heterostructures.},

  doi          = {10.1021/acsami.0c18268},

  journal      = {ACS Applied Materials and Interfaces},

  number       = 5,

  volume       = 13,

  place        = {United States},

  year         = {Sun Jan 31 00:00:00 EST 2021},

  month        = {Sun Jan 31 00:00:00 EST 2021}

}

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Title: Thickness-Dependent Interlayer Charge Transfer in MoSe2/MoS2 Heterostructures Studied by Femtosecond Transient Absorption Measurements

Abstract

Citation Formats

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Title: Thickness-Dependent Interlayer Charge Transfer in MoSe₂/MoS₂ Heterostructures Studied by Femtosecond Transient Absorption Measurements

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