Two-dimensional ferroelectric topological insulators in functionalized atomically thin bismuth layers
Abstract
We introduce a class of two-dimensional (2D) materials that possess coexisting ferroelectric and topologically insulating orders. Such ferroelectric topological insulators (FETIs) occur in noncentrosymmetric atomic layer structures with strong spin-orbit coupling (SOC). Here, we showcase a prototype 2D FETI in an atomically thin bismuth layer functionalized by CH2OH, which exhibits a large ferroelectric polarization that is switchable by a ligand molecule rotation mechanism and a strong SOC that drives a band inversion leading to the topologically insulating state. An external electric field that switches the ferroelectric polarization also tunes the spin texture in the underlying atomic lattice. Moreover, the functionalized bismuth layer exhibits an additional quantum order driven by the valley splitting at the K and K' points in the Brillouin zone stemming from the symmetry breaking and strong SOC in the system, resulting in a remarkable state of matter with the simultaneous presence of the quantum spin Hall and quantum valley Hall effect. These phenomena are predicted to exist in other similarly constructed 2D FETIs, thereby offering a unique quantum material platform for discovering novel physics and exploring innovative applications.
- Authors:
-
- Queensland Univ. of Technology (Australia)
- Weizmann Inst. of Science, Rehovot (Israel)
- Shandong Univ., Jinan (China)
- Univ. of Nevada, Las Vegas, NV (United States)
- Publication Date:
- Research Org.:
- Univ. of Nevada, Las Vegas, NV (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1771001
- Alternate Identifier(s):
- OSTI ID: 1421890
- Grant/Contract Number:
- NA0001982
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 97; Journal Issue: 7; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Ferroelectricity; First-principles calculations; Topological materials; Valleytronics; 2-dimensional systems
Citation Formats
Kou, Liangzhi, Fu, Huixia, Ma, Yandong, Yan, Binghai, Liao, Ting, Du, Aijun, and Chen, Changfeng. Two-dimensional ferroelectric topological insulators in functionalized atomically thin bismuth layers. United States: N. p., 2018.
Web. doi:10.1103/physrevb.97.075429.
Kou, Liangzhi, Fu, Huixia, Ma, Yandong, Yan, Binghai, Liao, Ting, Du, Aijun, & Chen, Changfeng. Two-dimensional ferroelectric topological insulators in functionalized atomically thin bismuth layers. United States. https://doi.org/10.1103/physrevb.97.075429
Kou, Liangzhi, Fu, Huixia, Ma, Yandong, Yan, Binghai, Liao, Ting, Du, Aijun, and Chen, Changfeng. Tue .
"Two-dimensional ferroelectric topological insulators in functionalized atomically thin bismuth layers". United States. https://doi.org/10.1103/physrevb.97.075429. https://www.osti.gov/servlets/purl/1771001.
@article{osti_1771001,
title = {Two-dimensional ferroelectric topological insulators in functionalized atomically thin bismuth layers},
author = {Kou, Liangzhi and Fu, Huixia and Ma, Yandong and Yan, Binghai and Liao, Ting and Du, Aijun and Chen, Changfeng},
abstractNote = {We introduce a class of two-dimensional (2D) materials that possess coexisting ferroelectric and topologically insulating orders. Such ferroelectric topological insulators (FETIs) occur in noncentrosymmetric atomic layer structures with strong spin-orbit coupling (SOC). Here, we showcase a prototype 2D FETI in an atomically thin bismuth layer functionalized by CH2OH, which exhibits a large ferroelectric polarization that is switchable by a ligand molecule rotation mechanism and a strong SOC that drives a band inversion leading to the topologically insulating state. An external electric field that switches the ferroelectric polarization also tunes the spin texture in the underlying atomic lattice. Moreover, the functionalized bismuth layer exhibits an additional quantum order driven by the valley splitting at the K and K' points in the Brillouin zone stemming from the symmetry breaking and strong SOC in the system, resulting in a remarkable state of matter with the simultaneous presence of the quantum spin Hall and quantum valley Hall effect. These phenomena are predicted to exist in other similarly constructed 2D FETIs, thereby offering a unique quantum material platform for discovering novel physics and exploring innovative applications.},
doi = {10.1103/physrevb.97.075429},
journal = {Physical Review B},
number = 7,
volume = 97,
place = {United States},
year = {Tue Feb 20 00:00:00 EST 2018},
month = {Tue Feb 20 00:00:00 EST 2018}
}
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