Nature of native atomic defects in ZrTe5 and their impact on the low-energy electronic structure
Abstract
Over the past decades, investigations of the anomalous low-energy electronic properties of ZrTe5 have reached a wide array of conclusions. An open question is the growth method's impact on the stoichiometry of ZrTe5 samples, especially given the very small density of states near its chemical potential. In this work, we report on high-resolution scanning tunneling microscopy and spectroscopy measurements performed on samples grown via different methods. Using density functional theory calculations, we identify the most prevalent types of atomic defects on the surface of ZrTe5, namely, Te vacancies and intercalated Zr atoms. Finally, we precisely quantify their density and outline their role as ionized defects in the anomalous resistivity of this material.
- Authors:
-
- Univ. de Fribourg (Switzerland)
- Univ. de Fribourg (Switzerland); LUT Univ., Lappeenranta (Finland)
- Univ. de Fribourg (Switzerland); Univ. Rennes (France)
- Ecole Polytechnique Federale Lausanne (Switzlerland)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Publication Date:
- Research Org.:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); Swiss National Science Foundation (SNSF)
- OSTI Identifier:
- 1737425
- Report Number(s):
- BNL-220712-2020-JAAM
Journal ID: ISSN 2475-9953; TRN: US2205311
- Grant/Contract Number:
- SC0012704; P00P2170597; P00P2170544
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Materials
- Additional Journal Information:
- Journal Volume: 4; Journal Issue: 11; Journal ID: ISSN 2475-9953
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Growth; point defects; semiconductors; topological materials; density functional calculations; scanning tunneling microscopy; scanning tunneling spectroscopy
Citation Formats
Salzmann, B., Pulkkinen, A., Hildebrand, B., Jaouen, T., Zhang, S. N., Martino, E., Li, Q., Gu, G., Berger, H., Yazyev, O. V., Akrap, A., and Monney, C. Nature of native atomic defects in ZrTe5 and their impact on the low-energy electronic structure. United States: N. p., 2020.
Web. doi:10.1103/physrevmaterials.4.114201.
Salzmann, B., Pulkkinen, A., Hildebrand, B., Jaouen, T., Zhang, S. N., Martino, E., Li, Q., Gu, G., Berger, H., Yazyev, O. V., Akrap, A., & Monney, C. Nature of native atomic defects in ZrTe5 and their impact on the low-energy electronic structure. United States. https://doi.org/10.1103/physrevmaterials.4.114201
Salzmann, B., Pulkkinen, A., Hildebrand, B., Jaouen, T., Zhang, S. N., Martino, E., Li, Q., Gu, G., Berger, H., Yazyev, O. V., Akrap, A., and Monney, C. Tue .
"Nature of native atomic defects in ZrTe5 and their impact on the low-energy electronic structure". United States. https://doi.org/10.1103/physrevmaterials.4.114201. https://www.osti.gov/servlets/purl/1737425.
@article{osti_1737425,
title = {Nature of native atomic defects in ZrTe5 and their impact on the low-energy electronic structure},
author = {Salzmann, B. and Pulkkinen, A. and Hildebrand, B. and Jaouen, T. and Zhang, S. N. and Martino, E. and Li, Q. and Gu, G. and Berger, H. and Yazyev, O. V. and Akrap, A. and Monney, C.},
abstractNote = {Over the past decades, investigations of the anomalous low-energy electronic properties of ZrTe5 have reached a wide array of conclusions. An open question is the growth method's impact on the stoichiometry of ZrTe5 samples, especially given the very small density of states near its chemical potential. In this work, we report on high-resolution scanning tunneling microscopy and spectroscopy measurements performed on samples grown via different methods. Using density functional theory calculations, we identify the most prevalent types of atomic defects on the surface of ZrTe5, namely, Te vacancies and intercalated Zr atoms. Finally, we precisely quantify their density and outline their role as ionized defects in the anomalous resistivity of this material.},
doi = {10.1103/physrevmaterials.4.114201},
journal = {Physical Review Materials},
number = 11,
volume = 4,
place = {United States},
year = {Tue Nov 10 00:00:00 EST 2020},
month = {Tue Nov 10 00:00:00 EST 2020}
}
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