Synthesis and structural characterization of the new Zintl phases Ba3Cd2P4 and Ba2Cd2P3. Rare example of small gap semiconducting behavior with negative thermopower within the range 300 K-700 K
Abstract
The new Zintl phases Ba3Cd2P4 and Ba2Cd2P3 have been synthesized using Pb flux, which allowed for the growth of 4-5 mm large crystals. The structures were determined utilizing single-crystal X-ray diffraction methods. Both compounds crystalize in the monoclinic crystal system (space group C2/m (No. 12)) and their structures are closely related. The structure of Ba3Cd2P4 can be seen as being comprised of divalent Ba atoms and conjoined CdP4 tetrahedra in the form of [Cd2P4]6- layers. Within the layers, homoatomic P–P bonds are present, which if cleaved, leave two infinite [CdP3]7- chains running along the crystallographic b-axis. The other structure, that of Ba2Cd2P3, can be rationalized as also having divalent Ba atoms and conjoined CdP4 tetrahedra in the form of [Cd2P3]6- layers. These layers, again, can be visualized as chains that run down the crystallographic b-axis, which are further connected by P-P dimers. Electronic band structure calculations show that each structure has an optimal number of valence electrons, and therefore conform to the Zintl-Klemm concept. Accordingly, the two compounds can be considered small band gap semiconductors, with band gaps of ca. 0.1 eV and 0.6 eV for Ba3Cd2P4 and Ba2Cd2P3, respectively. Electrical resistivity measurements show that Ba3Cd2P4 displays a large resistivitymore »
- Authors:
-
- Univ. of Delaware, Newark, DE (United States)
- Publication Date:
- Research Org.:
- Univ. of Delaware, Newark, DE (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1696968
- Alternate Identifier(s):
- OSTI ID: 1776100
- Grant/Contract Number:
- SC0008885
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Solid State Chemistry
- Additional Journal Information:
- Journal Volume: 289; Journal ID: ISSN 0022-4596
- Publisher:
- Elsevier
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; Crystal structure; Single-crystal X-ray diffraction; Thermoelectrics; Zintl phases
Citation Formats
Balvanz, Adam, Baranets, Sviatoslav, and Bobev, Svilen. Synthesis and structural characterization of the new Zintl phases Ba3Cd2P4 and Ba2Cd2P3. Rare example of small gap semiconducting behavior with negative thermopower within the range 300 K-700 K. United States: N. p., 2020.
Web. doi:10.1016/j.jssc.2020.121476.
Balvanz, Adam, Baranets, Sviatoslav, & Bobev, Svilen. Synthesis and structural characterization of the new Zintl phases Ba3Cd2P4 and Ba2Cd2P3. Rare example of small gap semiconducting behavior with negative thermopower within the range 300 K-700 K. United States. https://doi.org/10.1016/j.jssc.2020.121476
Balvanz, Adam, Baranets, Sviatoslav, and Bobev, Svilen. Thu .
"Synthesis and structural characterization of the new Zintl phases Ba3Cd2P4 and Ba2Cd2P3. Rare example of small gap semiconducting behavior with negative thermopower within the range 300 K-700 K". United States. https://doi.org/10.1016/j.jssc.2020.121476. https://www.osti.gov/servlets/purl/1696968.
@article{osti_1696968,
title = {Synthesis and structural characterization of the new Zintl phases Ba3Cd2P4 and Ba2Cd2P3. Rare example of small gap semiconducting behavior with negative thermopower within the range 300 K-700 K},
author = {Balvanz, Adam and Baranets, Sviatoslav and Bobev, Svilen},
abstractNote = {The new Zintl phases Ba3Cd2P4 and Ba2Cd2P3 have been synthesized using Pb flux, which allowed for the growth of 4-5 mm large crystals. The structures were determined utilizing single-crystal X-ray diffraction methods. Both compounds crystalize in the monoclinic crystal system (space group C2/m (No. 12)) and their structures are closely related. The structure of Ba3Cd2P4 can be seen as being comprised of divalent Ba atoms and conjoined CdP4 tetrahedra in the form of [Cd2P4]6- layers. Within the layers, homoatomic P–P bonds are present, which if cleaved, leave two infinite [CdP3]7- chains running along the crystallographic b-axis. The other structure, that of Ba2Cd2P3, can be rationalized as also having divalent Ba atoms and conjoined CdP4 tetrahedra in the form of [Cd2P3]6- layers. These layers, again, can be visualized as chains that run down the crystallographic b-axis, which are further connected by P-P dimers. Electronic band structure calculations show that each structure has an optimal number of valence electrons, and therefore conform to the Zintl-Klemm concept. Accordingly, the two compounds can be considered small band gap semiconductors, with band gaps of ca. 0.1 eV and 0.6 eV for Ba3Cd2P4 and Ba2Cd2P3, respectively. Electrical resistivity measurements show that Ba3Cd2P4 displays a large resistivity value at room temperature and an experimental band gap of ca. 0.05 eV, which fits reasonably well with the theoretical predictions. Thermopower measurements show that throughout the temperature range 300 K-700 K, Ba3Cd2P4 displays a negative Seebeck coefficient. Here, the extremum value of -84 μV is reached at 630 K, suggestive of an n-type semiconductor, a rarity among Zintl phases.},
doi = {10.1016/j.jssc.2020.121476},
journal = {Journal of Solid State Chemistry},
number = ,
volume = 289,
place = {United States},
year = {Thu May 28 00:00:00 EDT 2020},
month = {Thu May 28 00:00:00 EDT 2020}
}
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