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Title: Investigation of physical properties of F-and-Ga co-doped ZnO thin films grown by RF magnetron sputtering for perovskite solar cells applications

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Electricity (OE), Advanced Grid Research & Development. Power Systems Engineering Research
OSTI Identifier:
1694148
Grant/Contract Number:  
19214301D; YB2018014; 01910092010
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Materials Science in Semiconductor Processing
Additional Journal Information:
Journal Name: Materials Science in Semiconductor Processing Journal Volume: 112 Journal Issue: C; Journal ID: ISSN 1369-8001
Publisher:
Elsevier
Country of Publication:
Netherlands
Language:
English

Citation Formats

Zheng, Guoxi, Song, Jianmin, Zhang, Jie, Li, Junjie, Han, Bing, Meng, Xudong, Yang, Fu, Zhao, Ying, and Wang, Yanfeng. Investigation of physical properties of F-and-Ga co-doped ZnO thin films grown by RF magnetron sputtering for perovskite solar cells applications. Netherlands: N. p., 2020. Web. doi:10.1016/j.mssp.2020.105016.
Zheng, Guoxi, Song, Jianmin, Zhang, Jie, Li, Junjie, Han, Bing, Meng, Xudong, Yang, Fu, Zhao, Ying, & Wang, Yanfeng. Investigation of physical properties of F-and-Ga co-doped ZnO thin films grown by RF magnetron sputtering for perovskite solar cells applications. Netherlands. https://doi.org/10.1016/j.mssp.2020.105016
Zheng, Guoxi, Song, Jianmin, Zhang, Jie, Li, Junjie, Han, Bing, Meng, Xudong, Yang, Fu, Zhao, Ying, and Wang, Yanfeng. Mon . "Investigation of physical properties of F-and-Ga co-doped ZnO thin films grown by RF magnetron sputtering for perovskite solar cells applications". Netherlands. https://doi.org/10.1016/j.mssp.2020.105016.
@article{osti_1694148,
title = {Investigation of physical properties of F-and-Ga co-doped ZnO thin films grown by RF magnetron sputtering for perovskite solar cells applications},
author = {Zheng, Guoxi and Song, Jianmin and Zhang, Jie and Li, Junjie and Han, Bing and Meng, Xudong and Yang, Fu and Zhao, Ying and Wang, Yanfeng},
abstractNote = {},
doi = {10.1016/j.mssp.2020.105016},
journal = {Materials Science in Semiconductor Processing},
number = C,
volume = 112,
place = {Netherlands},
year = {2020},
month = {6}
}

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