Investigation of physical properties of F-and-Ga co-doped ZnO thin films grown by RF magnetron sputtering for perovskite solar cells applications
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE Office of Electricity (OE), Advanced Grid Research & Development. Power Systems Engineering Research
- OSTI Identifier:
- 1694148
- Grant/Contract Number:
- 19214301D; YB2018014; 01910092010
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Materials Science in Semiconductor Processing
- Additional Journal Information:
- Journal Name: Materials Science in Semiconductor Processing Journal Volume: 112 Journal Issue: C; Journal ID: ISSN 1369-8001
- Publisher:
- Elsevier
- Country of Publication:
- Netherlands
- Language:
- English
Citation Formats
Zheng, Guoxi, Song, Jianmin, Zhang, Jie, Li, Junjie, Han, Bing, Meng, Xudong, Yang, Fu, Zhao, Ying, and Wang, Yanfeng. Investigation of physical properties of F-and-Ga co-doped ZnO thin films grown by RF magnetron sputtering for perovskite solar cells applications. Netherlands: N. p., 2020.
Web. doi:10.1016/j.mssp.2020.105016.
Zheng, Guoxi, Song, Jianmin, Zhang, Jie, Li, Junjie, Han, Bing, Meng, Xudong, Yang, Fu, Zhao, Ying, & Wang, Yanfeng. Investigation of physical properties of F-and-Ga co-doped ZnO thin films grown by RF magnetron sputtering for perovskite solar cells applications. Netherlands. https://doi.org/10.1016/j.mssp.2020.105016
Zheng, Guoxi, Song, Jianmin, Zhang, Jie, Li, Junjie, Han, Bing, Meng, Xudong, Yang, Fu, Zhao, Ying, and Wang, Yanfeng. Mon .
"Investigation of physical properties of F-and-Ga co-doped ZnO thin films grown by RF magnetron sputtering for perovskite solar cells applications". Netherlands. https://doi.org/10.1016/j.mssp.2020.105016.
@article{osti_1694148,
title = {Investigation of physical properties of F-and-Ga co-doped ZnO thin films grown by RF magnetron sputtering for perovskite solar cells applications},
author = {Zheng, Guoxi and Song, Jianmin and Zhang, Jie and Li, Junjie and Han, Bing and Meng, Xudong and Yang, Fu and Zhao, Ying and Wang, Yanfeng},
abstractNote = {},
doi = {10.1016/j.mssp.2020.105016},
journal = {Materials Science in Semiconductor Processing},
number = C,
volume = 112,
place = {Netherlands},
year = {Mon Jun 01 00:00:00 EDT 2020},
month = {Mon Jun 01 00:00:00 EDT 2020}
}
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https://doi.org/10.1016/j.mssp.2020.105016
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