Iron on GaN(0001) pseudo-1 × 1 (1+1/12) investigated by scanning tunneling microscopy and first-principles theory

Lin, Wenzhi; Mandru, Andrada-Oana; Smith, Arthur R.; Takeuchi, Noboru; Al-Brithen, Hamad H.

doi:10.1063/1.4874607

Title: Iron on GaN(0001) pseudo-1 × 1 (1+1/12) investigated by scanning tunneling microscopy and first-principles theory

Journal Article · Mon Apr 28 00:00:00 UTC 2014 · Applied Physics Letters

DOI: https://doi.org/10.1063/1.4874607 · OSTI ID:1684917

Lin, Wenzhi ^[1]; Mandru, Andrada-Oana ^[2];

^[2]; Takeuchi, Noboru ^[3]; Al-Brithen, Hamad H. ^[4]

Ohio Univ., Athens, OH (United States); Ohio University
Ohio Univ., Athens, OH (United States)
Univ. Nacional Autonoma de Mexico (UNAM), Codigo Postal (Mexico)
King Saud Univ., Riyadh (Saudi Arabia)

We have investigated sub-monolayer iron deposition on atomically smooth GaN(0001) pseudo-1 × 1 (1+1/12). The iron is deposited at a substrate temperature of 360 °C, upon which reflection high energy electron diffraction shows a transformation to a √3 × √3-R30° pattern. After cooling to room temperature, the pattern transforms to a 6 × 6, and scanning tunneling microscopy reveals 6 × 6 reconstructed regions decorating the GaN step edges. Here, first-principles theoretical calculations have been carried out for a range of possible structural models, one of the best being a Ga dimer model consisting of 2/9 monolayer of Fe incorporated into 7/3 monolayer of Ga in a relaxed but distorted structure.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Ohio Univ., Athens, OH (United States)

Sponsoring Organization:: CONACYT; DGAPA-UNAM; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: FG02-06ER46317

OSTI ID:: 1684917

Report Number(s):: DOE-OHIO--46317-75

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 104; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (35)

GaN Electronics Pearton, S. J.; Ren, F. Advanced Materials, Vol. 12, Issue 21 https://doi.org/10.1002/1521-4095(200011)12:21<1571::AID-ADMA1571>3.0.CO;2-T	journal	November 2000
Epitaxial growth of Fe on GaN(0001): structural and magnetic properties Calarco, R.; Meijers, R.; Kaluza, N. physica status solidi (a), Vol. 202, Issue 5 https://doi.org/10.1002/pssa.200461297	journal	April 2005
The role of liquid phase epitaxy during growth of AlGaN by MBE Moustakas, Theodore D.; Bhattacharyya, Anirban physica status solidi (c), Vol. 9, Issue 3-4 https://doi.org/10.1002/pssc.201100427	journal	December 2011
Magnetic and structural properties of epitaxial Fe thin films on GaAs(001) and interfaces Doi, M.; Cuenya, B. Roldan; Keune, W. Journal of Magnetism and Magnetic Materials, Vol. 240, Issue 1-3 https://doi.org/10.1016/S0304-8853(01)00845-9	journal	February 2002
Growth and characterization of Fe nanostructures on GaN Honda, Yuya; Hayakawa, Satoko; Hasegawa, Shigehiko Applied Surface Science, Vol. 256, Issue 4 https://doi.org/10.1016/j.apsusc.2009.05.131	journal	November 2009
Structure characterization of Fe films grown on GaAs (100) by ion-beam sputter epitaxy Monteverde, F.; Michel, A.; Eymery, J. -P. Journal of Crystal Growth, Vol. 267, Issue 1-2 https://doi.org/10.1016/j.jcrysgro.2004.03.075	journal	June 2004
Epitaxial growth and characterization of Fe thin films on wurtzite GaN(0001) Meijers, R.; Calarco, R.; Kaluza, N. Journal of Crystal Growth, Vol. 283, Issue 3-4 https://doi.org/10.1016/j.jcrysgro.2005.06.004	journal	October 2005
Structural changes and alloying of annealed iron layers on GaAs(001) and GaAs(110) Godde, C.; Noor, S.; Urban, C. Surface Science, Vol. 602, Issue 21 https://doi.org/10.1016/j.susc.2008.09.002	journal	November 2008
Structure and magnetism of the Fe/GaAs interface Filipe, A.; Schuhl, A.; Galtier, P. Applied Physics Letters, Vol. 70, Issue 1 https://doi.org/10.1063/1.119284	journal	January 1997
High-quality visible-blind AlGaN p-i-n photodiodes Monroy, E.; Hamilton, M.; Walker, D. Applied Physics Letters, Vol. 74, Issue 8 https://doi.org/10.1063/1.123960	journal	February 1999
Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor Hanbicki, A. T.; Jonker, B. T.; Itskos, G. Applied Physics Letters, Vol. 80, Issue 7 https://doi.org/10.1063/1.1449530	journal	February 2002
Analysis of the transport process providing spin injection through an Fe/AlGaAs Schottky barrier Hanbicki, A. T.; van ’t Erve, O. M. J.; Magno, R. Applied Physics Letters, Vol. 82, Issue 23 https://doi.org/10.1063/1.1580631	journal	June 2003
Spin lifetimes of electrons injected into GaAs and GaN Krishnamurthy, Srinivasan; van Schilfgaarde, Mark; Newman, Nathan Applied Physics Letters, Vol. 83, Issue 9 https://doi.org/10.1063/1.1606873	journal	September 2003
GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses Choi, H. W.; Liu, C.; Gu, E. Applied Physics Letters, Vol. 84, Issue 13 https://doi.org/10.1063/1.1690876	journal	March 2004
Two-dimensional growth of Fe thin films with perpendicular magnetic anisotropy on GaN(0001) He, Ke; Ma, L. Y.; Ma, X. C. Applied Physics Letters, Vol. 88, Issue 23 https://doi.org/10.1063/1.2210792	journal	June 2006
WSXM : A software for scanning probe microscopy and a tool for nanotechnology Horcas, I.; Fernández, R.; Gómez-Rodríguez, J. M. Review of Scientific Instruments, Vol. 78, Issue 1 https://doi.org/10.1063/1.2432410	journal	January 2007
Fe films grown on GaAs(110) in a two-step process: Improved structural and magnetic properties Winking, L.; Wenderoth, M.; Homoth, J. Applied Physics Letters, Vol. 92, Issue 19 https://doi.org/10.1063/1.2920826	journal	May 2008
Electrical spin injection from Fe into ZnSe(001) Hanbicki, A. T.; Kioseoglou, G.; Holub, M. A. Applied Physics Letters, Vol. 94, Issue 8 https://doi.org/10.1063/1.3089837	journal	February 2009
Thermal stability of epitaxial Fe films on GaN(0001) Gao, Cunxu; Brandt, Oliver; Schönherr, Hans-Peter Applied Physics Letters, Vol. 95, Issue 11 https://doi.org/10.1063/1.3230004	journal	September 2009
Incorporation of iron on the clean and gallium-bilayer GaN(0001) surface González-Hernández, Rafael; López P., William; Moreno-Armenta, María G. Journal of Applied Physics, Vol. 109, Issue 7 https://doi.org/10.1063/1.3536788	journal	April 2011
Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy Tarsa, E. J.; Heying, B.; Wu, X. H. Journal of Applied Physics, Vol. 82, Issue 11 https://doi.org/10.1063/1.365575	journal	December 1997
QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials Giannozzi, Paolo; Baroni, Stefano; Bonini, Nicola Journal of Physics: Condensed Matter, Vol. 21, Issue 39, Article No. 395502 https://doi.org/10.1088/0953-8984/21/39/395502	journal	September 2009
Soft self-consistent pseudopotentials in a generalized eigenvalue formalism Vanderbilt, David Physical Review B, Vol. 41, Issue 11, p. 7892-7895 https://doi.org/10.1103/PhysRevB.41.7892	journal	April 1990
Structure of GaN(0001): The laterally contracted Ga bilayer model Northrup, John E.; Neugebauer, J.; Feenstra, R. M. Physical Review B, Vol. 61, Issue 15 https://doi.org/10.1103/PhysRevB.61.9932	journal	April 2000
Surfactant effect of gallium during molecular-beam epitaxy of GaN on AlN (0001) Mula, Guido; Adelmann, C.; Moehl, S. Physical Review B, Vol. 64, Issue 19 https://doi.org/10.1103/PhysRevB.64.195406	journal	October 2001
First-principles calculations of Fe on GaAs(100) Mirbt, S.; Sanyal, B.; Isheden, C. Physical Review B, Vol. 67, Issue 15 https://doi.org/10.1103/PhysRevB.67.155421	journal	April 2003
Spin injection and relaxation in ferromagnet-semiconductor heterostructures Adelmann, C.; Lou, X.; Strand, J. Physical Review B, Vol. 71, Issue 12 https://doi.org/10.1103/PhysRevB.71.121301	journal	March 2005
Epitaxial growth, magnetic properties, and lattice dynamics of Fe nanoclusters on GaAs(001) Cuenya, B. Roldan; Naitabdi, A.; Schuster, E. Physical Review B, Vol. 76, Issue 9 https://doi.org/10.1103/PhysRevB.76.094403	journal	September 2007
Spin injection across the Fe/GaAs interface: Role of interfacial ordering Schultz, B. D.; Marom, N.; Naveh, D. Physical Review B, Vol. 80, Issue 20 https://doi.org/10.1103/PhysRevB.80.201309	journal	November 2009
Two-dimensional Mn structure on the GaN growth surface and evidence for room-temperature spin ordering Wang, Kangkang; Takeuchi, Noboru; Chinchore, Abhijit V. Physical Review B, Vol. 83, Issue 16 https://doi.org/10.1103/PhysRevB.83.165407	journal	April 2011
Adatom Kinetics On and Below the Surface: The Existence of a New Diffusion Channel Neugebauer, Jörg; Zywietz, Tosja K.; Scheffler, Matthias Physical Review Letters, Vol. 90, Issue 5 https://doi.org/10.1103/PhysRevLett.90.056101	journal	February 2003
High Brightness GaN Vertical Light-Emitting Diodes on Metal Alloy for General Lighting Application Chu, Chen-Fu; Cheng, Chao-Chen; Liu, Wen-Huan Proceedings of the IEEE, Vol. 98, Issue 7, p. 1197-1207 https://doi.org/10.1109/JPROC.2009.2037026	journal	May 2010
Reconstructions of GaN(0001) and (0001̄) surfaces: Ga-rich metallic structures Smith, A. R. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 16, Issue 4 https://doi.org/10.1116/1.590156	journal	July 1998
Spintronics: A Spin-Based Electronics Vision for the Future Wolf, S. A.; Awschalom, D. D.; Buhrman, R. A. Science, Vol. 294, Issue 5546, p. 1488-1495 https://doi.org/10.1126/science.1065389	journal	November 2001
PHYSICS: How to Create a Spin Current Sharma, P. Science, Vol. 307, Issue 5709 https://doi.org/10.1126/science.1099388	journal	January 2005

Similar Records

Iron on GaN(0001) pseudo-1 × 1 (1+1/(12) ) investigated by scanning tunneling microscopy and first-principles theory

Journal Article · Mon Apr 28 04:00:00 UTC 2014 · Applied Physics Letters · OSTI ID:22267723

Lin, Wenzhi; Mandru, Andrada-Oana; Takeuchi, Noboru; +1 more

Surface Structure of GaN(0001) in the Chemical Vapor Deposition Environment

Journal Article · Thu Jul 01 04:00:00 UTC 1999 · Physical Review Letters · OSTI ID:357315

Munkholm, A; Stephenson, G B; Eastman, J A; +7 more

Formation of manganese {delta}-doped atomic layer in wurtzite GaN

Journal Article · Sat Sep 01 04:00:00 UTC 2012 · Journal of Applied Physics · OSTI ID:22089426

Meng, Shi; Chinchore, Abhijit; Kangkang, Wang; +3 more

Related Subjects

6x6 reconstruction
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
Iron
chemical elements
crystal structure
crystalline solids
density functional theory
electron diffraction
energy model
first-principles
gallium nitride
metal oxides
plasma sources
scanning tunneling microscopy
transition metals

Title: Iron on GaN(0001) pseudo-1 × 1 (1+1/12) investigated by scanning tunneling microscopy and first-principles theory

Citation Formats

References (35)

Similar Records

Related Subjects