Uniform high-k amorphous native oxide synthesized by oxygen plasma for top-gated transistors

Tu, Teng; Zhang, Yichi; Li, Tianran; Yu, Jia; Liu, Lingmei; Wu, Jinxiong; Tan, Congwei; Tang, Jilin; Liang, Yan; Zhang, Congcong; Dai, Yumin; Han, Yu; Lai, Keji; Peng, Hailin

doi:10.1021/acs.nanolett.0c02951

Title: Uniform high-k amorphous native oxide synthesized by oxygen plasma for top-gated transistors

Abstract

The integration of high-k gate dielectrics with two-dimensional (2D) semiconducting channel materials is essential for high-performance and low-power electronics. However, the conformal deposition of a uniform high-k dielectric with sub-1-nm equivalent oxide thickness (EOT) and high interface quality on high-mobility 2D semiconductors is still challenging. Here we report a facile approach to synthesize a uniform high-k (ε_r ~ 22) amorphous native oxide Bi₂SeO_x on the 2D semiconducting Bi2O2Se using O₂ plasma at room temperature. The conformal native oxide can directly serve as gate dielectrics with EOT of ~0.9 nm, while the original properties of underlying 2D Bi₂O₂Se is preserved. Furthermore, high-resolution area-selective oxidation of Bi₂O₂Se is achieved to fabricate discrete electronic components. This facile integration of a 2D semiconductor and its high-k native oxide holds high promise for next-generation nanoelectronics.

Authors:

Tu, Teng ^[1]; Zhang, Yichi ^[1]; Li, Tianran ^[1]; Yu, Jia ^[2]; Liu, Lingmei ^[3]; Wu, Jinxiong ^[4]; Tan, Congwei ^[1]; Tang, Jilin ^[1]; Liang, Yan ^[1]; Zhang, Congcong ^[1]; Dai, Yumin ^[1]; Han, Yu ^[3]; Lai, Keji ^[2]; Peng, Hailin ^[1]

Peking Univ., Beijing (China)
Univ. of Texas, Austin, TX (United States)
King Abdullah Univ. of Science and Technology (KAUST), Thuwal (Saudi Arabia)
Peking Univ., Beijing (China); Nankai Univ., Tianjin (China)

Publication Date:: Thu Sep 03 00:00:00 EDT 2020

Research Org.:: Univ. of Texas, Austin, TX (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1658862

Grant/Contract Number:: SC0019025

Resource Type:: Accepted Manuscript

Journal Name:: Nano Letters

Additional Journal Information:: Journal Volume: 20; Journal Issue: 10; Journal ID: ISSN 1530-6984

Publisher:: American Chemical Society

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Tu, Teng, Zhang, Yichi, Li, Tianran, Yu, Jia, Liu, Lingmei, Wu, Jinxiong, Tan, Congwei, Tang, Jilin, Liang, Yan, Zhang, Congcong, Dai, Yumin, Han, Yu, Lai, Keji, and Peng, Hailin. Uniform high-k amorphous native oxide synthesized by oxygen plasma for top-gated transistors.  United States: N. p., 2020. 
Web.  doi:10.1021/acs.nanolett.0c02951.

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                    Tu, Teng, Zhang, Yichi, Li, Tianran, Yu, Jia, Liu, Lingmei, Wu, Jinxiong, Tan, Congwei, Tang, Jilin, Liang, Yan, Zhang, Congcong, Dai, Yumin, Han, Yu, Lai, Keji, & Peng, Hailin. Uniform high-k amorphous native oxide synthesized by oxygen plasma for top-gated transistors.  United States.  https://doi.org/10.1021/acs.nanolett.0c02951

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                    Tu, Teng, Zhang, Yichi, Li, Tianran, Yu, Jia, Liu, Lingmei, Wu, Jinxiong, Tan, Congwei, Tang, Jilin, Liang, Yan, Zhang, Congcong, Dai, Yumin, Han, Yu, Lai, Keji, and Peng, Hailin. Thu .  
"Uniform high-k amorphous native oxide synthesized by oxygen plasma for top-gated transistors".  United States.  https://doi.org/10.1021/acs.nanolett.0c02951.  https://www.osti.gov/servlets/purl/1658862.

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@article{osti_1658862,

  title        = {Uniform high-k amorphous native oxide synthesized by oxygen plasma for top-gated transistors},

  author       = {Tu, Teng and Zhang, Yichi and Li, Tianran and Yu, Jia and Liu, Lingmei and Wu, Jinxiong and Tan, Congwei and Tang, Jilin and Liang, Yan and Zhang, Congcong and Dai, Yumin and Han, Yu and Lai, Keji and Peng, Hailin},

  abstractNote = {The integration of high-k gate dielectrics with two-dimensional (2D) semiconducting channel materials is essential for high-performance and low-power electronics. However, the conformal deposition of a uniform high-k dielectric with sub-1-nm equivalent oxide thickness (EOT) and high interface quality on high-mobility 2D semiconductors is still challenging. Here we report a facile approach to synthesize a uniform high-k (εr ~ 22) amorphous native oxide Bi2SeOx on the 2D semiconducting Bi2O2Se using O2 plasma at room temperature. The conformal native oxide can directly serve as gate dielectrics with EOT of ~0.9 nm, while the original properties of underlying 2D Bi2O2Se is preserved. Furthermore, high-resolution area-selective oxidation of Bi2O2Se is achieved to fabricate discrete electronic components. This facile integration of a 2D semiconductor and its high-k native oxide holds high promise for next-generation nanoelectronics.},

  doi          = {10.1021/acs.nanolett.0c02951},

  journal      = {Nano Letters},

  number       = 10,

  volume       = 20,

  place        = {United States},

  year         = {Thu Sep 03 00:00:00 EDT 2020},

  month        = {Thu Sep 03 00:00:00 EDT 2020}

}

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Title: Uniform high-k amorphous native oxide synthesized by oxygen plasma for top-gated transistors

Abstract

Citation Formats

A silicon-based photocathode for water reduction with an epitaxial SrTiO3 protection layer and a nanostructured catalyst journal, December 2014

Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films journal, September 2012

Black phosphorus field-effect transistors journal, March 2014

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A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface journal, January 2004

Electrostatic modification of novel materials journal, November 2006

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Characteristics of Self-Aligned Gate-First Ge p- and n-Channel MOSFETs Using CVD $\hbox{HfO}_{2}$ Gate Dielectric and Si Surface Passivation journal, April 2007

$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric journal, April 2012

Silicon oxidation studies: A revised model for thermal oxidation journal, September 1983

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Electric Field Effect in Atomically Thin Carbon Films journal, October 2004

MoS2 and WS2 Analogues of Graphene journal, April 2010

Atomically Thin MoS2 A New Direct-Gap Semiconductor journal, September 2010

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High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se journal, April 2017

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