DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Universal scaling of weak localization in graphene due to bias-induced dispersion decoherence

Abstract

The differential conductance of graphene is shown to exhibit a zero-bias anomaly at low temperatures, arising from a suppression of the quantum corrections due to weak localization and electron interactions. A simple rescaling of these data, free of any adjustable parameters, shows that this anomaly exhibits a universal, temperature- (T) independent form. According to this, the differential conductance is approximately constant at small voltages (V < kBT/e), while at larger voltages it increases logarithmically with the applied bias. For theoretical insight into the origins of this behaviour, which is inconsistent with electron heating, we formulate a model for weak-localization in the presence of nonequilibrium transport. According to this model, the applied voltage causes unavoidable dispersion decoherence, which arises as diffusing electron partial waves, with a spread of energies defined by the value of the applied voltage, gradually decohere with one another as they diffuse through the system. The decoherence yields a universal scaling of the conductance as a function of eV/kBT, with a logarithmic variation for eV/kBT > 1, variations in accordance with the results of experiment. Our theoretical description of nonequilibrium transport in the presence of this source of decoherence exhibits strong similarities with the results of experiment, includingmore » the aforementioned rescaling of the conductance and its logarithmic variation as a function of the applied voltage.« less

Authors:
 [1];  [2]; ORCiD logo [3]; ORCiD logo [3];  [3];  [4];  [4];  [4];  [5];  [5];  [6]; ORCiD logo [3]
  1. King Mongkut's Inst. of Technology Ladkrabang, Bangkok (Thailand). Dept. of Physics; Commission on Higher Education, Bangkok (Thailand). Center of Excellence in Physics
  2. King Mongkut's Inst. of Technology Ladkrabang, Bangkok (Thailand). Dept. of Electronic Engineering
  3. State Univ. of New York (SUNY), Buffalo, NY (United States). Dept. of Electrical Engineering
  4. State Univ. of New York (SUNY), Buffalo, NY (United States). Dept. of Physics
  5. Inst. of Microelectronics of Chinese Academy of Sciences, Beijing (China). High-Frequencey High-Voltage Device and Integrated Circuits Center
  6. Uppsala Univ. (Sweden). Dept. of Physics and Astronomy
Publication Date:
Research Org.:
State Univ. of New York (SUNY), Buffalo, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Engineering & Technology
OSTI Identifier:
1629870
Grant/Contract Number:  
FG02-04ER46180
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 10; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Somphonsane, R., Ramamoorthy, H., He, G., Nathawat, J., Yin, S., Kwan, C. -P., Arabchigavkani, N., Barut, B., Zhao, M., Jin, Z., Fransson, J., and Bird, J. P. Universal scaling of weak localization in graphene due to bias-induced dispersion decoherence. United States: N. p., 2020. Web. doi:10.1038/s41598-020-62313-3.
Somphonsane, R., Ramamoorthy, H., He, G., Nathawat, J., Yin, S., Kwan, C. -P., Arabchigavkani, N., Barut, B., Zhao, M., Jin, Z., Fransson, J., & Bird, J. P. Universal scaling of weak localization in graphene due to bias-induced dispersion decoherence. United States. https://doi.org/10.1038/s41598-020-62313-3
Somphonsane, R., Ramamoorthy, H., He, G., Nathawat, J., Yin, S., Kwan, C. -P., Arabchigavkani, N., Barut, B., Zhao, M., Jin, Z., Fransson, J., and Bird, J. P. Fri . "Universal scaling of weak localization in graphene due to bias-induced dispersion decoherence". United States. https://doi.org/10.1038/s41598-020-62313-3. https://www.osti.gov/servlets/purl/1629870.
@article{osti_1629870,
title = {Universal scaling of weak localization in graphene due to bias-induced dispersion decoherence},
author = {Somphonsane, R. and Ramamoorthy, H. and He, G. and Nathawat, J. and Yin, S. and Kwan, C. -P. and Arabchigavkani, N. and Barut, B. and Zhao, M. and Jin, Z. and Fransson, J. and Bird, J. P.},
abstractNote = {The differential conductance of graphene is shown to exhibit a zero-bias anomaly at low temperatures, arising from a suppression of the quantum corrections due to weak localization and electron interactions. A simple rescaling of these data, free of any adjustable parameters, shows that this anomaly exhibits a universal, temperature- (T) independent form. According to this, the differential conductance is approximately constant at small voltages (V < kBT/e), while at larger voltages it increases logarithmically with the applied bias. For theoretical insight into the origins of this behaviour, which is inconsistent with electron heating, we formulate a model for weak-localization in the presence of nonequilibrium transport. According to this model, the applied voltage causes unavoidable dispersion decoherence, which arises as diffusing electron partial waves, with a spread of energies defined by the value of the applied voltage, gradually decohere with one another as they diffuse through the system. The decoherence yields a universal scaling of the conductance as a function of eV/kBT, with a logarithmic variation for eV/kBT > 1, variations in accordance with the results of experiment. Our theoretical description of nonequilibrium transport in the presence of this source of decoherence exhibits strong similarities with the results of experiment, including the aforementioned rescaling of the conductance and its logarithmic variation as a function of the applied voltage.},
doi = {10.1038/s41598-020-62313-3},
journal = {Scientific Reports},
number = 1,
volume = 10,
place = {United States},
year = {Fri Mar 27 00:00:00 EDT 2020},
month = {Fri Mar 27 00:00:00 EDT 2020}
}

Works referenced in this record:

Theory of Electronic States and Transport in Carbon Nanotubes
journal, March 2005

  • Ando, Tsuneya
  • Journal of the Physical Society of Japan, Vol. 74, Issue 3
  • DOI: 10.1143/JPSJ.74.777

Nonmetallic Conduction in Thin Metal Films at Low Temperatures
journal, September 1979


Influence of Trigonal Warping on Interference Effects in Bilayer Graphene
journal, April 2007


Inelastic scattering in a monolayer graphene sheet: A weak-localization study
journal, September 2008


Influence of electric field on weak localization
journal, June 1982

  • Bergmann, Gerd
  • Zeitschrift f�r Physik B Condensed Matter, Vol. 49, Issue 2
  • DOI: 10.1007/BF01314749

Weak localization and Raman study of anisotropically etched graphene antidots
journal, September 2013

  • Oberhuber, Florian; Blien, Stefan; Heydrich, Stefanie
  • Applied Physics Letters, Vol. 103, Issue 14
  • DOI: 10.1063/1.4824025

Interplay between interferences and electron-electron interactions in epitaxial graphene
journal, May 2011


Highly sensitive hot electron bolometer based on disordered graphene
journal, December 2013

  • Han, Qi; Gao, Teng; Zhang, Rui
  • Scientific Reports, Vol. 3, Issue 1
  • DOI: 10.1038/srep03533

Strong Suppression of Weak Localization in Graphene
journal, July 2006


Log E dependence of the conductivity in a two-dimensional random system
journal, August 1981


Evaluating the Sources of Graphene’s Resistivity Using Differential Conductance
journal, September 2017


Hot electron transport in suspended multilayer graphene
journal, July 2010


Disordered electronic systems
journal, April 1985


Two-dimensional magnetotransport in a black phosphorus naked quantum well
journal, July 2015

  • Tayari, V.; Hemsworth, N.; Fakih, I.
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms8702

Tuning of quantum interference in top-gated graphene on SiC
journal, December 2013


Inelastic life-time of the conduction electrons in some noble metal films
journal, August 1982

  • Bergmann, Gerd
  • Zeitschrift für Physik B Condensed Matter, Vol. 48, Issue 1
  • DOI: 10.1007/BF02026422

The electronic properties of graphene
journal, January 2009

  • Castro Neto, A. H.; Guinea, F.; Peres, N. M. R.
  • Reviews of Modern Physics, Vol. 81, Issue 1, p. 109-162
  • DOI: 10.1103/RevModPhys.81.109

Electron–electron interaction in high-quality epitaxial graphene
journal, November 2011


Competing Weak Localization and Weak Antilocalization in Ultrathin Topological Insulators
journal, December 2012

  • Lang, Murong; He, Liang; Kou, Xufeng
  • Nano Letters, Vol. 13, Issue 1
  • DOI: 10.1021/nl303424n

On the quantum transport equation for many particle systems
journal, April 1993


Crossover between Weak Antilocalization and Weak Localization in a Magnetically Doped Topological Insulator
journal, January 2012


Control and characterization of individual grains and grain boundaries in graphene grown by chemical vapour deposition
journal, May 2011

  • Yu, Qingkai; Jauregui, Luis A.; Wu, Wei
  • Nature Materials, Vol. 10, Issue 6, p. 443-449
  • DOI: 10.1038/nmat3010

Universal conductance fluctuations in metals: Effects of finite temperature, interactions, and magnetic field
journal, January 1987


Fast Energy Relaxation of Hot Carriers Near the Dirac Point of Graphene
journal, August 2013

  • Somphonsane, R.; Ramamoorthy, H.; Bohra, G.
  • Nano Letters, Vol. 13, Issue 9
  • DOI: 10.1021/nl4020777

Magnetoresistance and non-Ohmic conductivity of thin platinum films at low temperatures
journal, April 1982


Weak localization in thin films
journal, May 1984


Robust mesoscopic fluctuations in disordered graphene
journal, August 2012

  • Bohra, G.; Somphonsane, R.; Ferry, D. K.
  • Applied Physics Letters, Vol. 101, Issue 9
  • DOI: 10.1063/1.4748167

Magnetoconductance oscillations in graphene antidot arrays
journal, September 2008

  • Shen, T.; Wu, Y. Q.; Capano, M. A.
  • Applied Physics Letters, Vol. 93, Issue 12
  • DOI: 10.1063/1.2988725

Weak-Localization Magnetoresistance and Valley Symmetry in Graphene
journal, October 2006


Nonlinear resistivity and heat dissipation in monolayer graphene
journal, April 2012


Transition between Electron Localization and Antilocalization in Graphene
journal, November 2009


Weak localization and transport gap in graphene antidot lattices
journal, September 2009


Weak localization of two-dimensional Dirac fermions beyond the diffusion regime
journal, November 2011

  • Nestoklon, M. O.; Averkiev, N. S.; Tarasenko, S. A.
  • Solid State Communications, Vol. 151, Issue 21
  • DOI: 10.1016/j.ssc.2011.07.031

Quantum Transport in Two-Dimensional Graphite System
journal, July 1998

  • Shon, Nguyen Hong; Ando, Tsuneya
  • Journal of the Physical Society of Japan, Vol. 67, Issue 7
  • DOI: 10.1143/JPSJ.67.2421

Electronic properties of disordered two-dimensional carbon
journal, March 2006


Hot Electron Cooling by Acoustic Phonons in Graphene
journal, August 2012


Electric Field dependence of non-metallic conduction in a two-dimensional random system
journal, June 1981


Weak localization: The quasiclassical theory of electrons in a random potential
journal, July 1986


Imaging coherent transport in graphene (part II): probing weak localization
journal, June 2010


Nonergodicity and microscopic symmetry breaking of the conductance fluctuations in disordered mesoscopic graphene
journal, October 2012


Electron Localization Properties in Graphene
journal, July 2006


Berry's Phase and Absence of Back Scattering in Carbon Nanotubes
journal, August 1998

  • Ando, Tsuneya; Nakanishi, Takeshi; Saito, Riichiro
  • Journal of the Physical Society of Japan, Vol. 67, Issue 8
  • DOI: 10.1143/JPSJ.67.2857

Magnetoresistance of disordered graphene: From low to high temperatures
journal, July 2014


Physical interpretation of weak localization: A time-of-flight experiment with conduction electrons
journal, September 1983


Electron-electron interaction in a narrow, disordered electron gas in nonequilibrium
journal, February 1997


Electron-electron interactions in GaAs- Al x Ga 1 x As heterostructures
journal, June 1986


Electron-electron interactions in the conductivity of graphene
journal, August 2010


Nonequilibrium electronic transport and interaction in short metallic nanobridges
journal, April 2001


Self-heating and nonlinear current-voltage characteristics in bilayer graphene
journal, May 2011


Shot noise and conductivity at high bias in bilayer graphene: Signatures of electron-optical phonon coupling
journal, December 2011


Weak localization in thin films
journal, May 1984


Log E dependence of the conductivity in a two-dimensional random system
journal, August 1981


Weak localization of two-dimensional Dirac fermions beyond the diffusion regime
journal, November 2011

  • Nestoklon, M. O.; Averkiev, N. S.; Tarasenko, S. A.
  • Solid State Communications, Vol. 151, Issue 21
  • DOI: 10.1016/j.ssc.2011.07.031

Fast Energy Relaxation of Hot Carriers Near the Dirac Point of Graphene
journal, August 2013

  • Somphonsane, R.; Ramamoorthy, H.; Bohra, G.
  • Nano Letters, Vol. 13, Issue 9
  • DOI: 10.1021/nl4020777

Evaluating the Sources of Graphene’s Resistivity Using Differential Conductance
journal, September 2017


Highly sensitive hot electron bolometer based on disordered graphene
journal, December 2013

  • Han, Qi; Gao, Teng; Zhang, Rui
  • Scientific Reports, Vol. 3, Issue 1
  • DOI: 10.1038/srep03533

Magnetoconductance oscillations in graphene antidot arrays
journal, September 2008

  • Shen, T.; Wu, Y. Q.; Capano, M. A.
  • Applied Physics Letters, Vol. 93, Issue 12
  • DOI: 10.1063/1.2988725

Robust mesoscopic fluctuations in disordered graphene
journal, August 2012

  • Bohra, G.; Somphonsane, R.; Ferry, D. K.
  • Applied Physics Letters, Vol. 101, Issue 9
  • DOI: 10.1063/1.4748167

Weak localization and transport gap in graphene antidot lattices
journal, September 2009


Dephasing in strongly anisotropic black phosphorus
journal, December 2016


Weak Localization in Graphene Flakes
journal, February 2008


Weak Localization of Dirac Fermions in Graphene
journal, September 2008


Electron-Electron Interaction in the Magnetoresistance of Graphene
journal, March 2012


z z Symmetry of Spin-Orbit Coupling and Weak Localization in Graphene
journal, April 2012


Nonmetallic Conduction in Thin Metal Films at Low Temperatures.
journal, November 1979


Interaction Effects in Disordered Fermi Systems in Two Dimensions
journal, May 1980


Influence of a new energy scale on conductance fluctuations and weak localization in ultrasmall metallic nanobridges
journal, February 1993


Crossover from Symplectic to Orthogonal Class in a Two-Dimensional Honeycomb Lattice
journal, December 2002


Intervalley Scattering, Long-Range Disorder, and Effective Time-Reversal Symmetry Breaking in Graphene
journal, November 2006


Weak Antilocalization in Epitaxial Graphene: Evidence for Chiral Electrons
journal, March 2007


Weak Localization in Bilayer Graphene
journal, April 2007


Electron localization properties in graphene
text, January 2006

  • D. V., Khveshchenko,
  • The University of North Carolina at Chapel Hill University Libraries
  • DOI: 10.17615/q778-kr12

Imaging coherent transport in graphene (Part II): Probing weak localization
text, January 2010


Hot electron transport in suspended multilayer graphene
text, January 2010


Self heating and nonlinear current-voltage characteristics in bilayer graphene
text, January 2011


Non-linear resistivity and heat dissipation in monolayer graphene
text, January 2012


Two-Dimensional Magnetotransport in a Black Phosphorus Naked Quantum Well
text, January 2014


Strong suppression of weak (anti)localization in graphene
text, January 2006


Magnetoresistance and non-Ohmic conductivity of thin platinum films at low temperatures
text, January 1982

  • Hoffmann, H.; Hofmann, F.; Schoepe, Wilfried
  • Universität Regensburg
  • DOI: 10.5283/epub.18834

Weak localization and Raman study of anisotropically etched graphene antidots
text, January 2013

  • Oberhuber, Florian; Blien, Stefan; Heydrich, Stefanie
  • Universität Regensburg
  • DOI: 10.5283/epub.28888

Works referencing / citing this record:

Pure electron-electron dephasing in percolative aluminum ultrathin film grown by molecular beam epitaxy
journal, February 2015


Systematic Study of Ferromagnetism in CrxSb2-xTe3 Topological Insulator Thin Films using Electrical and Optical Techniques.
journalarticle, January 2018

  • Singh, Angadjit; Kamboj, Varun S.; Liu, Jieyi
  • Springer Science and Business Media LLC
  • DOI: 10.17863/cam.34041

Weak Localization and Antilocalization in Topological Materials with Impurity Spin-Orbit Interactions
journal, July 2017

  • Liu, Weizhe Edward; Hankiewicz, Ewelina M.; Culcer, Dimitrie
  • Materials, Vol. 10, Issue 7
  • DOI: 10.3390/ma10070807