Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2Se
Abstract
Semiconductors are essential materials that affect our everyday life in the modern world. Two-dimensional semiconductors with high mobility and moderate bandgap are particularly attractive today because of their potential application in fast, low-power, and ultrasmall/thin electronic devices. We investigate the electronic structures of a new layered air-stable oxide semiconductor, Bi2O2Se, with ultrahigh mobility (~2.8 × 105cm2/V∙s at 2.0 K) and moderate bandgap (~0.8 eV). Combining angle-resolved photoemission spectroscopy and scanning tunneling microscopy, we mapped out the complete band structures of Bi2O2Se with key parameters (for example, effective mass, Fermi velocity, and bandgap). The unusual spatial uniformity of the bandgap without undesired in-gap states on the sample surface with up to ~50% defects makes Bi2O2Se an ideal semiconductor for future electronic applications. In addition, the structural compatibility between Bi2O2Se and interesting perovskite oxides (for example, cuprate high–transition temperature superconductors and commonly used substrate material SrTiO3) further makes heterostructures between Bi2O2Se and these oxides possible platforms for realizing novel physical phenomena, such as topological superconductivity, Josephson junction field-effect transistor, new superconducting optoelectronics, and novel lasers.
- Authors:
-
[1];
[1];
[7];
[8];
[1];
[2];
more »
- Univ. of Oxford (United Kingdom). Dept. of Physics
- Chinese Academy of Sciences (CAS), Shanghai (China). ShanghaiTech Univ. Shanghai Science Research Center. School of Physical Science and Technology
- Peking Univ., Beijing (China). College of Chemistry and Molecular Engineering. Beijing National Lab. for Molecular Sciences. Center for Nanochemistry
- Weizmann Inst. of Science, Rehovot (Israel). Dept. of Condensed Matter Physics
- Max Planck Society, Dresden (Germany). Max Planck Inst. for Chemical Physics of Solids
- Tsinghua Univ., Beijing (China). State Key Lab. of Low Dimensional Quantum Physics. Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
- Chinese Academy of Sciences (CAS), Shanghai (China). ShanghaiTech Univ. Shanghai Science Research Center. School of Physical Science and Technology; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS); Pohang Univ. of Science and Technology (POSTECH) (Korea, Republic of). Accelerator Lab.
- Univ. of Oxford (United Kingdom). Dept. of Physics; Paul Scherrer Inst. (PSI), Villigen (Switzerland)
- Nanjing Univ. (China). Collaborative Innovation Center of Advanced Microstructures. College of Engineering and Applied Sciences. National Lab. of Solid-State Microstructures
- Shanghai Jiao Tong Univ. (China). Dept. of Physics and Astronomy. Key Lab. of Artificial Structures and Quantum Control (Ministry of Education)
- Univ. of Oxford (United Kingdom). Dept. of Physics; Chinese Academy of Sciences (CAS), Shanghai (China). ShanghaiTech Univ. Shanghai Science Research Center. School of Physical Science and Technology; Tsinghua Univ., Beijing (China). State Key Lab. of Low Dimensional Quantum Physics. Dept. of Physics
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1625997
- Grant/Contract Number:
- AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Science Advances
- Additional Journal Information:
- Journal Volume: 4; Journal Issue: 9; Journal ID: ISSN 2375-2548
- Publisher:
- AAAS
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Science & Technology - Other Topics
Citation Formats
Chen, Cheng, Wang, Meixiao, Wu, Jinxiong, Fu, Huixia, Yang, Haifeng, Tian, Zhen, Tu, Teng, Peng, Han, Sun, Yan, Xu, Xiang, Jiang, Juan, Schröter, Niels B. M., Li, Yiwei, Pei, Ding, Liu, Shuai, Ekahana, Sandy A., Yuan, Hongtao, Xue, Jiamin, Li, Gang, Jia, Jinfeng, Liu, Zhongkai, Yan, Binghai, Peng, Hailin, and Chen, Yulin. Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2Se. United States: N. p., 2018.
Web. doi:10.1126/sciadv.aat8355.
Chen, Cheng, Wang, Meixiao, Wu, Jinxiong, Fu, Huixia, Yang, Haifeng, Tian, Zhen, Tu, Teng, Peng, Han, Sun, Yan, Xu, Xiang, Jiang, Juan, Schröter, Niels B. M., Li, Yiwei, Pei, Ding, Liu, Shuai, Ekahana, Sandy A., Yuan, Hongtao, Xue, Jiamin, Li, Gang, Jia, Jinfeng, Liu, Zhongkai, Yan, Binghai, Peng, Hailin, & Chen, Yulin. Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2Se. United States. https://doi.org/10.1126/sciadv.aat8355
Chen, Cheng, Wang, Meixiao, Wu, Jinxiong, Fu, Huixia, Yang, Haifeng, Tian, Zhen, Tu, Teng, Peng, Han, Sun, Yan, Xu, Xiang, Jiang, Juan, Schröter, Niels B. M., Li, Yiwei, Pei, Ding, Liu, Shuai, Ekahana, Sandy A., Yuan, Hongtao, Xue, Jiamin, Li, Gang, Jia, Jinfeng, Liu, Zhongkai, Yan, Binghai, Peng, Hailin, and Chen, Yulin. Fri .
"Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2Se". United States. https://doi.org/10.1126/sciadv.aat8355. https://www.osti.gov/servlets/purl/1625997.
@article{osti_1625997,
title = {Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2Se},
author = {Chen, Cheng and Wang, Meixiao and Wu, Jinxiong and Fu, Huixia and Yang, Haifeng and Tian, Zhen and Tu, Teng and Peng, Han and Sun, Yan and Xu, Xiang and Jiang, Juan and Schröter, Niels B. M. and Li, Yiwei and Pei, Ding and Liu, Shuai and Ekahana, Sandy A. and Yuan, Hongtao and Xue, Jiamin and Li, Gang and Jia, Jinfeng and Liu, Zhongkai and Yan, Binghai and Peng, Hailin and Chen, Yulin},
abstractNote = {Semiconductors are essential materials that affect our everyday life in the modern world. Two-dimensional semiconductors with high mobility and moderate bandgap are particularly attractive today because of their potential application in fast, low-power, and ultrasmall/thin electronic devices. We investigate the electronic structures of a new layered air-stable oxide semiconductor, Bi2O2Se, with ultrahigh mobility (~2.8 × 105cm2/V∙s at 2.0 K) and moderate bandgap (~0.8 eV). Combining angle-resolved photoemission spectroscopy and scanning tunneling microscopy, we mapped out the complete band structures of Bi2O2Se with key parameters (for example, effective mass, Fermi velocity, and bandgap). The unusual spatial uniformity of the bandgap without undesired in-gap states on the sample surface with up to ~50% defects makes Bi2O2Se an ideal semiconductor for future electronic applications. In addition, the structural compatibility between Bi2O2Se and interesting perovskite oxides (for example, cuprate high–transition temperature superconductors and commonly used substrate material SrTiO3) further makes heterostructures between Bi2O2Se and these oxides possible platforms for realizing novel physical phenomena, such as topological superconductivity, Josephson junction field-effect transistor, new superconducting optoelectronics, and novel lasers.},
doi = {10.1126/sciadv.aat8355},
journal = {Science Advances},
number = 9,
volume = 4,
place = {United States},
year = {Fri Sep 14 00:00:00 EDT 2018},
month = {Fri Sep 14 00:00:00 EDT 2018}
}
Free Publicly Available Full Text
Publisher's Version of Record
Other availability
Search WorldCat to find libraries that may hold this journal
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Surface States on Silicon and Germanium Surfaces
journal, February 1956
- Statz, H.; deMars, G. A.; Davis, L.
- Physical Review, Vol. 101, Issue 4
Majorana Fermions and a Topological Phase Transition in Semiconductor-Superconductor Heterostructures
journal, August 2010
- Lutchyn, Roman M.; Sau, Jay D.; Das Sarma, S.
- Physical Review Letters, Vol. 105, Issue 7
Surface states at steam-grown silicon-silicon dioxide interfaces
journal, October 1966
- Berglund, C. N.
- IEEE Transactions on Electron Devices, Vol. ED-13, Issue 10
Strain Effects To Optimize Thermoelectric Properties of Doped Bi 2 O 2 Se via Tran–Blaha Modified Becke–Johnson Density Functional Theory
journal, October 2013
- Guo, Donglin; Hu, Chenguo; Xi, Yi
- The Journal of Physical Chemistry C, Vol. 117, Issue 41
Direct observation of a widely tunable bandgap in bilayer graphene
journal, June 2009
- Zhang, Yuanbo; Tang, Tsung-Ta; Girit, Caglar
- Nature, Vol. 459, Issue 7248
Mobility engineering and a metal–insulator transition in monolayer MoS2
journal, June 2013
- Radisavljevic, Branimir; Kis, Andras
- Nature Materials, Vol. 12, Issue 9
An Information Theory-Inspired Strategy for Design of Re-programmable Encrypted Graphene-based Coding Metasurfaces at Terahertz Frequencies
journal, April 2018
- Momeni, Ali; Rouhi, Kasra; Rajabalipanah, Hamid
- Scientific Reports, Vol. 8, Issue 1
Studies on the electronic structures of three-dimensional topological insulators by angle resolved photoemission spectroscopy
journal, September 2011
- Chen, Yulin
- Frontiers of Physics, Vol. 7, Issue 2
Temperature dependence of the band gap of silicon
journal, April 1974
- Bludau, W.; Onton, A.; Heinke, W.
- Journal of Applied Physics, Vol. 45, Issue 4
The electronic properties of graphene
journal, January 2009
- Castro Neto, A. H.; Guinea, F.; Peres, N. M. R.
- Reviews of Modern Physics, Vol. 81, Issue 1, p. 109-162
Hybrid superconductor–quantum dot devices
journal, September 2010
- De Franceschi, Silvano; Kouwenhoven, Leo; Schönenberger, Christian
- Nature Nanotechnology, Vol. 5, Issue 10
Accurate Band Gaps of Semiconductors and Insulators with a Semilocal Exchange-Correlation Potential
journal, June 2009
- Tran, Fabien; Blaha, Peter
- Physical Review Letters, Vol. 102, Issue 22
Self-modulation doping effect in the high-mobility layered semiconductor
journal, June 2018
- Fu, Huixia; Wu, Jinxiong; Peng, Hailin
- Physical Review B, Vol. 97, Issue 24
Environmental instability of few-layer black phosphorus
journal, January 2015
- Island, Joshua O.; Steele, Gary A.; Zant, Herre S. J. van der
- 2D Materials, Vol. 2, Issue 1
Enhanced Photon Generation in a Superconductor/Semiconductor-Diode Light Emitting Device
journal, October 2011
- Sasakura, H.; Kuramitsu, S.; Hayashi, Y.
- Physical Review Letters, Vol. 107, Issue 15
High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se
journal, April 2017
- Wu, Jinxiong; Yuan, Hongtao; Meng, Mengmeng
- Nature Nanotechnology, Vol. 12, Issue 6
Surface States on Silicon and Germanium Surfaces
journal, May 1957
- Statz, H.; deMars, G.; Davis, L.
- Physical Review, Vol. 106, Issue 3
Angle-resolved photoemission studies of the cuprate superconductors
journal, April 2003
- Damascelli, Andrea; Hussain, Zahid; Shen, Zhi-Xun
- Reviews of Modern Physics, Vol. 75, Issue 2
Josephson Light-Emitting Diode
journal, April 2010
- Recher, Patrik; Nazarov, Yuli V.; Kouwenhoven, Leo P.
- Physical Review Letters, Vol. 104, Issue 15
Electric Field Effect in Atomically Thin Carbon Films
journal, October 2004
- Novoselov, K. S.
- Science, Vol. 306, Issue 5696, p. 666-669
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996
- Kresse, G.; Furthmüller, J.
- Physical Review B, Vol. 54, Issue 16, p. 11169-11186
Proposal for an Optical Laser Producing Light at Half the Josephson Frequency
journal, August 2011
- Godschalk, Frans; Hassler, Fabian; Nazarov, Yuli V.
- Physical Review Letters, Vol. 107, Issue 7
High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
journal, July 2014
- Qiao, Jingsi; Kong, Xianghua; Hu, Zhi-Xin
- Nature Communications, Vol. 5, Issue 1
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
journal, April 2015
- Cui, Xu; Lee, Gwan-Hyoung; Kim, Young Duck
- Nature Nanotechnology, Vol. 10, Issue 6
Controlling the Electronic Structure of Bilayer Graphene
journal, August 2006
- Ohta, Taisuke; Bostwick, Aaron; Seyller, Thomas
- Science, Vol. 313, Issue 5789
Electronics based on two-dimensional materials
journal, October 2014
- Fiori, Gianluca; Bonaccorso, Francesco; Iannaccone, Giuseppe
- Nature Nanotechnology, Vol. 9, Issue 10
Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors
journal, January 2016
- Li, Song-Lin; Tsukagoshi, Kazuhito; Orgiu, Emanuele
- Chemical Society Reviews, Vol. 45, Issue 1
Black phosphorus field-effect transistors
journal, March 2014
- Li, Likai; Yu, Yijun; Ye, Guo Jun
- Nature Nanotechnology, Vol. 9, Issue 5
Synthesis and thermoelectric properties of Bi2O2Se nanosheets
journal, October 2013
- Zhang, Kaiyou; Hu, Chenguo; Kang, Xueliang
- Materials Research Bulletin, Vol. 48, Issue 10
The electronic properties of graphene
text, January 2007
- Neto, A. H. Castro; Guinea, F.; Peres, N. M. R.
- arXiv
Majorana Fermions and a Topological Phase Transition in Semiconductor-Superconductor Heterostructures
text, January 2010
- Lutchyn, Roman M.; Sau, Jay D.; Sarma, S. Das
- arXiv
Proposal for an optical laser producing light at half the Josephson frequency
text, January 2010
- Godschalk, Frans; Hassler, Fabian; Nazarov, Yuli V.
- arXiv
Mobility engineering and metal-insulator transition in monolayer MoS2
text, January 2013
- Radisavljevic, Branimir; Kis, Andras
- arXiv
High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
text, January 2014
- Qiao, Jingsi; Kong, Xianghua; Hu, Zhi-Xin
- arXiv
Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors
text, January 2016
- Li, Song-Lin; Tsukagoshi, Kazihito; Orgiu, Emanuele
- arXiv
Electric Field Effect in Atomically Thin Carbon Films
text, January 2004
- Novoselov, K. S.; Geim, A. K.; Morozov, S. V.
- arXiv
Works referencing / citing this record:
Unusual Fermi‐Level Pinning and Ohmic Contact at Monolayer Bi 2 O 2 Se–Metal Interface
journal, February 2019
- Liu, Shiqi; Xu, Lianqiang; Pan, Yuanyuan
- Advanced Theory and Simulations, Vol. 2, Issue 5
Universal conductance fluctuations and phase-coherent transport in a semiconductor Bi 2 O 2 Se nanoplate with strong spin–orbit interaction
journal, January 2019
- Meng, Mengmeng; Huang, Shaoyun; Tan, Congwei
- Nanoscale, Vol. 11, Issue 22
Strain-tunable electronic structure, optical response, and high electron mobility of Bi 2 O 2 Se crystals
journal, August 2019
- Huang, Xiaoyu; Niu, Chun-Yao; Zhang, Jinping
- APL Materials, Vol. 7, Issue 8
Molecular Beam Epitaxy and Electronic Structure of Atomically Thin Oxyselenide Films
journal, August 2019
- Liang, Yan; Chen, Yujie; Sun, Yuanwei
- Advanced Materials, Vol. 31, Issue 39
Improved thermoelectric performance of bilayer Bi 2 O 2 Se by the band convergence approach
journal, January 2019
- Li, Menglu; Wang, Ning; Jiang, Ming
- Journal of Materials Chemistry C, Vol. 7, Issue 35
Surface electronic structure of bismuth oxychalcogenides
journal, September 2019
- Eremeev, S. V.; Koroteev, Y. M.; Chulkov, E. V.
- Physical Review B, Vol. 100, Issue 11
Bolometric Effect in Bi 2 O 2 Se Photodetectors
journal, September 2019
- Yang, Hang; Tan, Congwei; Deng, Chuyun
- Small, Vol. 15, Issue 43
Intrinsically low thermal conductivity of bismuth oxychalcogenides originating from interlayer coupling
journal, January 2019
- Song, Hong-Yue; Ge, Xu-Jin; Shang, Man-Yu
- Physical Chemistry Chemical Physics, Vol. 21, Issue 33
Epitaxial growth and characterization of high quality Bi 2 O 2 Se thin films on SrTiO 3 substrates by pulsed laser deposition
journal, January 2020
- Song, Yekai; Li, Zhuojun; Li, Hui
- Nanotechnology, Vol. 31, Issue 16
Seed‐Induced Vertical Growth of 2D Bi 2 O 2 Se Nanoplates by Chemical Vapor Transport
journal, September 2019
- Wu, Zhen; Liu, Guoliang; Wang, Yuxi
- Advanced Functional Materials, Vol. 29, Issue 50
Highly efficient broadband photodetectors based on lithography-free Au/Bi 2 O 2 Se/Au heterostructures
journal, January 2019
- Liu, Xiaolong; Li, Ruiping; Hong, Chengyun
- Nanoscale, Vol. 11, Issue 43
Infrared and Raman spectra of Bi 2 O 2 X and Bi 2 OX 2 (X = S, Se, and Te) studied from first principles calculations
journal, January 2019
- Xu, Yao-Di; Wang, Cong; Lv, Yang-Yang
- RSC Advances, Vol. 9, Issue 31
Optical Properties and Photocarrier Dynamics of Bi 2 O 2 Se Monolayer and Nanoplates
journal, March 2020
- Liu, Shuangyan; Tan, Congwei; He, Dawei
- Advanced Optical Materials, Vol. 8, Issue 6
Sensitive and Ultrabroadband Phototransistor Based on Two‐Dimensional Bi 2 O 2 Se Nanosheets
journal, September 2019
- Tong, Tong; Chen, Yunfeng; Qin, Shuchao
- Advanced Functional Materials, Vol. 29, Issue 50
Optimizing the thermoelectric transport properties of Bi 2 O 2 Se monolayer via biaxial strain
journal, January 2019
- Wang, Ning; Li, Menglu; Xiao, Haiyan
- Physical Chemistry Chemical Physics, Vol. 21, Issue 27
Propose two-dimensional Sb 2 Te 2 X (X = S, Se) with isotropic electron mobility and remarkable visible-light response
journal, January 2019
- Liang, Yan; Li, Jianwei; Jin, Hao
- Physical Chemistry Chemical Physics, Vol. 21, Issue 27