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Title: Massive Dirac Fermion Observed in Lanthanide-Doped Topological Insulator Thin Films

Abstract

The breaking of time reversal symmetry (TRS) in three-dimensional (3D) topological insulators (TIs), and thus the opening of a ‘Dirac-mass gap’ in the linearly dispersed Dirac surface state, is a prerequisite for unlocking exotic physical states. Introducing ferromagnetic long-range order by transition metal doping has been shown to break TRS. Here, we present the study of lanthanide (Ln) doped Bi2Te3, where the magnetic doping with high-moment lanthanides promises large energy gaps. Using molecular beam epitaxy, single-crystalline, rhombohedral thin films with Ln concentrations of up to ~35%, substituting on Bi sites, were achieved for Dy, Gd, and Ho doping. Angle-resolved photoemission spectroscopy shows the characteristic Dirac cone for Gd and Ho doping. In contrast, for Dy doping above a critical doping concentration, a gap opening is observed via the decreased spectral intensity at the Dirac point, indicating a topological quantum phase transition persisting up to room-temperature.

Authors:
 [1];  [2];  [2];  [3];  [4];  [4];  [5];  [5];  [5];  [6];  [7];  [2];  [2]
+ Show Author Affiliations
  1. Univ. of Oxford (United Kingdom). Clarendon Lab. Dept. of Physics; Stanford Univ., CA (United States). Dept. of Electrical Engineering
  2. Univ. of Oxford (United Kingdom). Clarendon Lab. Dept. of Physics
  3. Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials
  4. Max Planck Inst. for Intelligence Systems, Stuttgart (Germany). Stuttgart Center for Electron Microscopy
  5. IBM Almaden Research Center, San Jose, CA (United States)
  6. Stanford Univ., CA (United States). Dept. of Electrical Engineering
  7. Univ. of Oxford (United Kingdom). Clarendon Lab. Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced light Source
Publication Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1624804
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 5; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Science & Technology - Other Topics

Citation Formats

Harrison, S. E., Collins-McIntyre, L. J., Schönherr, P., Vailionis, A., Srot, V., van Aken, P. A., Kellock, A. J., Pushp, A., Parkin, S. S. P., Harris, J. S., Zhou, B., Chen, Y. L., and Hesjedal, T. Massive Dirac Fermion Observed in Lanthanide-Doped Topological Insulator Thin Films. United States: N. p., 2015. Web. doi:10.1038/srep15767.
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Harrison, S. E., Collins-McIntyre, L. J., Schönherr, P., Vailionis, A., Srot, V., van Aken, P. A., Kellock, A. J., Pushp, A., Parkin, S. S. P., Harris, J. S., Zhou, B., Chen, Y. L., & Hesjedal, T. Massive Dirac Fermion Observed in Lanthanide-Doped Topological Insulator Thin Films. United States. https://doi.org/10.1038/srep15767
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Harrison, S. E., Collins-McIntyre, L. J., Schönherr, P., Vailionis, A., Srot, V., van Aken, P. A., Kellock, A. J., Pushp, A., Parkin, S. S. P., Harris, J. S., Zhou, B., Chen, Y. L., and Hesjedal, T. Tue . "Massive Dirac Fermion Observed in Lanthanide-Doped Topological Insulator Thin Films". United States. https://doi.org/10.1038/srep15767. https://www.osti.gov/servlets/purl/1624804.
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@article{osti_1624804,
title = {Massive Dirac Fermion Observed in Lanthanide-Doped Topological Insulator Thin Films},
author = {Harrison, S. E. and Collins-McIntyre, L. J. and Schönherr, P. and Vailionis, A. and Srot, V. and van Aken, P. A. and Kellock, A. J. and Pushp, A. and Parkin, S. S. P. and Harris, J. S. and Zhou, B. and Chen, Y. L. and Hesjedal, T.},
abstractNote = {The breaking of time reversal symmetry (TRS) in three-dimensional (3D) topological insulators (TIs), and thus the opening of a ‘Dirac-mass gap’ in the linearly dispersed Dirac surface state, is a prerequisite for unlocking exotic physical states. Introducing ferromagnetic long-range order by transition metal doping has been shown to break TRS. Here, we present the study of lanthanide (Ln) doped Bi2Te3, where the magnetic doping with high-moment lanthanides promises large energy gaps. Using molecular beam epitaxy, single-crystalline, rhombohedral thin films with Ln concentrations of up to ~35%, substituting on Bi sites, were achieved for Dy, Gd, and Ho doping. Angle-resolved photoemission spectroscopy shows the characteristic Dirac cone for Gd and Ho doping. In contrast, for Dy doping above a critical doping concentration, a gap opening is observed via the decreased spectral intensity at the Dirac point, indicating a topological quantum phase transition persisting up to room-temperature.},
doi = {10.1038/srep15767},
journal = {Scientific Reports},
number = 1,
volume = 5,
place = {United States},
year = {Tue Oct 27 00:00:00 EDT 2015},
month = {Tue Oct 27 00:00:00 EDT 2015}
}
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Journal Article:
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https://doi.org/10.1038/srep15767
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Figures / Tables:

Figure 1 Figure 1: Surface morphology and structural properties. (a) Sequence of RHEED images of the substrate, an undoped (Bi2Te3) film, and a Dy-doped film with $x$ = 0.113 for comparison. Diffraction patterns obtained along the [$10\bar{1}0$] azimuth (top) and [ $11\bar{2}0$] azimuth (bottom) of $c$-plane sapphire occur upon 30° rotation, whichmore » reflects the three-fold symmetry of the crystal. (b) Atomic force microscopy images of an undoped Bi2Te3 film and Dy-doped film with $x$ = 0.055. With increasing Dy doping level, but $x$ ≤ 0.055, the morphology stays similar, however, the density of seeds and subsequent triangular structures increases as shown on the right. For samples with $x$ ≥ 0.113, the characteristic concentric hillock-like growth spirals are no longer the prominent feature. The surface roughness was also found to increase with doping which is consistent with the observed RHEED patterns. (c) 2$θ$-$ω$ scans and the FWHM of the (0 0 15) rocking curves, shown as an inset, as a function of Dy doping concentration. The FWHM values increase from 0.0555° for the undoped case to 1.7961° for the highest doping concentration, i.e., the Dy-doped films are of higher quality than Cr-doped Bi2Se3 thin films.« less
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    Works referencing / citing this record:

    Magnetic and Electronic Properties of Gd-Doped Topological Insulator Bi1.09Gd0.06Sb0.85Te3
    journal, September 2019

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    journal, December 2018

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    Magnetic profile of proximity-coupled ( Dy , Bi ) 2 Te 3 / ( Cr , Sb ) 2 Te 3 topological insulator heterostructures
    journal, August 2019

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