In-situ resonant band engineering of solution-processed semiconductors generates high performance n-type thermoelectric nano-inks
Abstract
Thermoelectric devices possess enormous potential to reshape the global energy landscape by converting waste heat into electricity, yet their commercial implementation has been limited by their high cost to output power ratio. No single “champion” thermoelectric material exists due to a broad range of material-dependent thermal and electrical property optimization challenges. While the advent of nanostructuring provided a general design paradigm for reducing material thermal conductivities, there exists no analogous strategy for homogeneous, precise doping of materials. Here, we demonstrate a nanoscale interface-engineering approach that harnesses the large chemically accessible surface areas of nanomaterials to yield massive, finely-controlled, and stable changes in the Seebeck coefficient, switching a poor nonconventional p-type thermoelectric material, tellurium, into a robust n-type material exhibiting stable properties over months of testing. These remodeled, n-type nanowires display extremely high power factors (~500 µW m-1K-2) that are orders of magnitude higher than their bulk p-type counterparts.
- Authors:
-
[1];
[3];
[5];
[5];
[8];
[5]
- New York Univ., Brooklyn, NY (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)
- Chinese Academy of Sciences (CAS), Beijing (China); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Stevens Inst. of Technology, Hoboken, NJ (United States); Univ. of California, Berkeley, CA (United States)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Univ. of California, Berkeley, CA (United States)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of Portland, OR (United States)
- Univ. of California, Santa Barbara, CA (United States)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; US Air Force Office of Scientific Research (AFOSR)
- OSTI Identifier:
- 1616987
- Grant/Contract Number:
- AC02-05CH11231; FA9550-11-C-0028
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nature Communications
- Additional Journal Information:
- Journal Volume: 11; Journal Issue: 1; Journal ID: ISSN 2041-1723
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; electronic devices; organic-inorganic nanostructures
Citation Formats
Sahu, Ayaskanta, Russ, Boris, Liu, Miao, Yang, Fan, Zaia, Edmond W., Gordon, Madeleine P., Forster, Jason D., Zhang, Ya-Qian, Scott, Mary C., Persson, Kristin A., Coates, Nelson E., Segalman, Rachel A., and Urban, Jeffrey J. In-situ resonant band engineering of solution-processed semiconductors generates high performance n-type thermoelectric nano-inks. United States: N. p., 2020.
Web. doi:10.1038/s41467-020-15933-2.
Sahu, Ayaskanta, Russ, Boris, Liu, Miao, Yang, Fan, Zaia, Edmond W., Gordon, Madeleine P., Forster, Jason D., Zhang, Ya-Qian, Scott, Mary C., Persson, Kristin A., Coates, Nelson E., Segalman, Rachel A., & Urban, Jeffrey J. In-situ resonant band engineering of solution-processed semiconductors generates high performance n-type thermoelectric nano-inks. United States. https://doi.org/10.1038/s41467-020-15933-2
Sahu, Ayaskanta, Russ, Boris, Liu, Miao, Yang, Fan, Zaia, Edmond W., Gordon, Madeleine P., Forster, Jason D., Zhang, Ya-Qian, Scott, Mary C., Persson, Kristin A., Coates, Nelson E., Segalman, Rachel A., and Urban, Jeffrey J. Wed .
"In-situ resonant band engineering of solution-processed semiconductors generates high performance n-type thermoelectric nano-inks". United States. https://doi.org/10.1038/s41467-020-15933-2. https://www.osti.gov/servlets/purl/1616987.
@article{osti_1616987,
title = {In-situ resonant band engineering of solution-processed semiconductors generates high performance n-type thermoelectric nano-inks},
author = {Sahu, Ayaskanta and Russ, Boris and Liu, Miao and Yang, Fan and Zaia, Edmond W. and Gordon, Madeleine P. and Forster, Jason D. and Zhang, Ya-Qian and Scott, Mary C. and Persson, Kristin A. and Coates, Nelson E. and Segalman, Rachel A. and Urban, Jeffrey J.},
abstractNote = {Thermoelectric devices possess enormous potential to reshape the global energy landscape by converting waste heat into electricity, yet their commercial implementation has been limited by their high cost to output power ratio. No single “champion” thermoelectric material exists due to a broad range of material-dependent thermal and electrical property optimization challenges. While the advent of nanostructuring provided a general design paradigm for reducing material thermal conductivities, there exists no analogous strategy for homogeneous, precise doping of materials. Here, we demonstrate a nanoscale interface-engineering approach that harnesses the large chemically accessible surface areas of nanomaterials to yield massive, finely-controlled, and stable changes in the Seebeck coefficient, switching a poor nonconventional p-type thermoelectric material, tellurium, into a robust n-type material exhibiting stable properties over months of testing. These remodeled, n-type nanowires display extremely high power factors (~500 µW m-1K-2) that are orders of magnitude higher than their bulk p-type counterparts.},
doi = {10.1038/s41467-020-15933-2},
journal = {Nature Communications},
number = 1,
volume = 11,
place = {United States},
year = {Wed Apr 29 00:00:00 EDT 2020},
month = {Wed Apr 29 00:00:00 EDT 2020}
}
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Fig. 1: Resonant band engineering by interfacial resurfacing. a, b Schematic of the doping process (not to scale) showing the evolution of the density of states and the change in Fermi level with removal of the polymer (polyvinylpyrrolidone, PVP) and attachment of the sulfur (S2−) atoms. CB and VB standmore »
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