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Title: Direct synthesis of biaxially textured nickel disilicide thin films by magnetron sputter deposition on low-cost metal tapes for flexible silicon devices

Abstract

Nickel silicides are widely used as contact materials for electronic devices based on silicon (Si). However, they have been predominantly fabricated by annealing separate Ni and Si phases which leads to phase and structural complexity. In this letter, direct epitaxial growth of a single-phase nickel disilicide (NiSi2) thin film by sputter deposition of NiSi2 is achieved on low-cost and flexible Hastelloy tapes which offers a promising route to fabricate low-cost, flexible electronic devices. Biaxially textured titanium nitride (TiN) is applied as the seeding layer and the diffusion barrier under NiSi2. An epitaxial relationship of (001)$$\langle$$100$$\rangle$$NiSi2 ∥ (001)$$\langle$$110$$\rangle$$TiN is observed with an extra-large lattice mismatch (~10.3%) between NiSi2 and TiN. Both the bonding similarity and the passivation effect by hydrogen promote the epitaxial growth of NiSi2 on TiN. The flat and smooth NiSi2 thin film consists of grains with a size of 50–100 nm. An epitaxially grown Si film on NiSi2 further demonstrates the potential of manufacturing high-performance Si flexible electronics with NiSi2/TiN/Hastelloy as the direct contact through this approach.

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1]; ORCiD logo [1]; ORCiD logo [1];  [1]
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  1. Univ. of Houston, TX (United States)
Publication Date:
Research Org.:
Univ. of Houston, TX (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1613377
Grant/Contract Number:  
EE0006711
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 114; Journal Issue: 8; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; physics; silicon; interface thermodynamics; epitaxy; electronic devices; transistors; magnetron sputtering; surface energy; silicide; thin films; annealing

Citation Formats

Li, Yongkuan, Gao, Ying, Yao, Yao, Sun, Sicong, Khatiwada, Devendra, Pouladi, Sara, Galstyan, Eduard, Rathi, Monika, Dutta, Pavel, Litvinchuk, Alexander P., Ryou, Jae-Hyun, and Selvamanickam, Venkat. Direct synthesis of biaxially textured nickel disilicide thin films by magnetron sputter deposition on low-cost metal tapes for flexible silicon devices. United States: N. p., 2019. Web. doi:10.1063/1.5080283.
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Li, Yongkuan, Gao, Ying, Yao, Yao, Sun, Sicong, Khatiwada, Devendra, Pouladi, Sara, Galstyan, Eduard, Rathi, Monika, Dutta, Pavel, Litvinchuk, Alexander P., Ryou, Jae-Hyun, & Selvamanickam, Venkat. Direct synthesis of biaxially textured nickel disilicide thin films by magnetron sputter deposition on low-cost metal tapes for flexible silicon devices. United States. https://doi.org/10.1063/1.5080283
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Li, Yongkuan, Gao, Ying, Yao, Yao, Sun, Sicong, Khatiwada, Devendra, Pouladi, Sara, Galstyan, Eduard, Rathi, Monika, Dutta, Pavel, Litvinchuk, Alexander P., Ryou, Jae-Hyun, and Selvamanickam, Venkat. Thu . "Direct synthesis of biaxially textured nickel disilicide thin films by magnetron sputter deposition on low-cost metal tapes for flexible silicon devices". United States. https://doi.org/10.1063/1.5080283. https://www.osti.gov/servlets/purl/1613377.
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@article{osti_1613377,
title = {Direct synthesis of biaxially textured nickel disilicide thin films by magnetron sputter deposition on low-cost metal tapes for flexible silicon devices},
author = {Li, Yongkuan and Gao, Ying and Yao, Yao and Sun, Sicong and Khatiwada, Devendra and Pouladi, Sara and Galstyan, Eduard and Rathi, Monika and Dutta, Pavel and Litvinchuk, Alexander P. and Ryou, Jae-Hyun and Selvamanickam, Venkat},
abstractNote = {Nickel silicides are widely used as contact materials for electronic devices based on silicon (Si). However, they have been predominantly fabricated by annealing separate Ni and Si phases which leads to phase and structural complexity. In this letter, direct epitaxial growth of a single-phase nickel disilicide (NiSi2) thin film by sputter deposition of NiSi2 is achieved on low-cost and flexible Hastelloy tapes which offers a promising route to fabricate low-cost, flexible electronic devices. Biaxially textured titanium nitride (TiN) is applied as the seeding layer and the diffusion barrier under NiSi2. An epitaxial relationship of (001)$\langle$100$\rangle$NiSi2 ∥ (001)$\langle$110$\rangle$TiN is observed with an extra-large lattice mismatch (~10.3%) between NiSi2 and TiN. Both the bonding similarity and the passivation effect by hydrogen promote the epitaxial growth of NiSi2 on TiN. The flat and smooth NiSi2 thin film consists of grains with a size of 50–100 nm. An epitaxially grown Si film on NiSi2 further demonstrates the potential of manufacturing high-performance Si flexible electronics with NiSi2/TiN/Hastelloy as the direct contact through this approach.},
doi = {10.1063/1.5080283},
journal = {Applied Physics Letters},
number = 8,
volume = 114,
place = {United States},
year = {Thu Feb 28 00:00:00 EST 2019},
month = {Thu Feb 28 00:00:00 EST 2019}
}
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https://doi.org/10.1063/1.5080283
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