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Title: Additive-assisted synthesis and optoelectronic properties of (CH 3 NH 3 ) 4 Bi 6 I 22

Abstract

A novel iodobismuthate semiconductor (MA) 4 Bi 6 I 22 (measured bandgap of 1.9 eV) was prepared using solution methods in the presence of HgI 2 additive.

Authors:
ORCiD logo [1]; ORCiD logo [1];  [2];  [2];  [3]; ORCiD logo [4]; ORCiD logo [3]; ORCiD logo [1]
  1. Department of Chemistry and Biochemistry, University of Oklahoma, Norman, USA
  2. Groupe d’Étude de la Matière Condensée, CNRS-UMR8635, Université de Versailles Saint Quentin, Université Paris-Saclay, 78035 Versailles cedex
  3. Idaho National Laboratory, Idaho Falls, USA
  4. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1602328
Grant/Contract Number:  
19P43-013FP
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Inorganic Chemistry Frontiers (Online)
Additional Journal Information:
Journal Name: Inorganic Chemistry Frontiers (Online) Journal Volume: 7 Journal Issue: 7; Journal ID: ISSN 2052-1553
Publisher:
Royal Society of Chemistry (RSC)
Country of Publication:
United Kingdom
Language:
English

Citation Formats

Sharma, Manila, Yangui, Aymen, Lusson, Alain, Boukheddaden, Kamel, Ding, Xiaxin, Du, Mao-Hua, Gofryk, Krzysztof, and Saparov, Bayrammurad. Additive-assisted synthesis and optoelectronic properties of (CH 3 NH 3 ) 4 Bi 6 I 22. United Kingdom: N. p., 2020. Web. doi:10.1039/C9QI01574D.
Sharma, Manila, Yangui, Aymen, Lusson, Alain, Boukheddaden, Kamel, Ding, Xiaxin, Du, Mao-Hua, Gofryk, Krzysztof, & Saparov, Bayrammurad. Additive-assisted synthesis and optoelectronic properties of (CH 3 NH 3 ) 4 Bi 6 I 22. United Kingdom. doi:10.1039/C9QI01574D.
Sharma, Manila, Yangui, Aymen, Lusson, Alain, Boukheddaden, Kamel, Ding, Xiaxin, Du, Mao-Hua, Gofryk, Krzysztof, and Saparov, Bayrammurad. Tue . "Additive-assisted synthesis and optoelectronic properties of (CH 3 NH 3 ) 4 Bi 6 I 22". United Kingdom. doi:10.1039/C9QI01574D.
@article{osti_1602328,
title = {Additive-assisted synthesis and optoelectronic properties of (CH 3 NH 3 ) 4 Bi 6 I 22},
author = {Sharma, Manila and Yangui, Aymen and Lusson, Alain and Boukheddaden, Kamel and Ding, Xiaxin and Du, Mao-Hua and Gofryk, Krzysztof and Saparov, Bayrammurad},
abstractNote = {A novel iodobismuthate semiconductor (MA) 4 Bi 6 I 22 (measured bandgap of 1.9 eV) was prepared using solution methods in the presence of HgI 2 additive.},
doi = {10.1039/C9QI01574D},
journal = {Inorganic Chemistry Frontiers (Online)},
number = 7,
volume = 7,
place = {United Kingdom},
year = {2020},
month = {3}
}

Journal Article:
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This content will become publicly available on February 25, 2021
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