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Title: Steady-state photoluminescent excitation characterization of semiconductor carrier recombination

Abstract

We report that photoluminescence excitation spectroscopy is a contactless characterization technique that can provide valuable information about the surface and bulk recombination parameters of a semiconductor device, distinct from other sorts of photoluminescent measurements. For this technique, a temperature-tuned light emitting diode (LED) has several advantages over other light sources. The large radiation density offered by LEDs from near-infrared to ultraviolet region at a low cost enables efcient and fast photoluminescence measurements. A simple and inexpensive LED-based setup facilitates measurement of surface recombination velocity and bulk Shockley-Read-Hall lifetime, which are key parameters to assess device performance. Finally, under the right conditions, this technique can also provide a contactless way to measure the external quantum efciency of a solar cell

Authors:
 [1];  [2];  [2]; ORCiD logo [2]; ORCiD logo [2]
+ Show Author Affiliations
  1. Intel Corporation, Hillsboro, OR (United States); Purdue Univ., West Lafayette, IN (United States)
  2. Purdue Univ., West Lafayette, IN (United States)
Publication Date:
Research Org.:
Stanford Univ., CA (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
OSTI Identifier:
1579853
Grant/Contract Number:  
EE0004946; AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
Review of Scientific Instruments
Additional Journal Information:
Journal Volume: 87; Journal Issue: 1; Journal ID: ISSN 0034-6748
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE

Citation Formats

Bhosale, J. S., Moore, J. E., Wang, X., Bermel, P., and Lundstrom, M. S. Steady-state photoluminescent excitation characterization of semiconductor carrier recombination. United States: N. p., 2016. Web. doi:10.1063/1.4939047.
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Bhosale, J. S., Moore, J. E., Wang, X., Bermel, P., & Lundstrom, M. S. Steady-state photoluminescent excitation characterization of semiconductor carrier recombination. United States. https://doi.org/10.1063/1.4939047
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Bhosale, J. S., Moore, J. E., Wang, X., Bermel, P., and Lundstrom, M. S. Thu . "Steady-state photoluminescent excitation characterization of semiconductor carrier recombination". United States. https://doi.org/10.1063/1.4939047. https://www.osti.gov/servlets/purl/1579853.
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@article{osti_1579853,
title = {Steady-state photoluminescent excitation characterization of semiconductor carrier recombination},
author = {Bhosale, J. S. and Moore, J. E. and Wang, X. and Bermel, P. and Lundstrom, M. S.},
abstractNote = {We report that photoluminescence excitation spectroscopy is a contactless characterization technique that can provide valuable information about the surface and bulk recombination parameters of a semiconductor device, distinct from other sorts of photoluminescent measurements. For this technique, a temperature-tuned light emitting diode (LED) has several advantages over other light sources. The large radiation density offered by LEDs from near-infrared to ultraviolet region at a low cost enables efcient and fast photoluminescence measurements. A simple and inexpensive LED-based setup facilitates measurement of surface recombination velocity and bulk Shockley-Read-Hall lifetime, which are key parameters to assess device performance. Finally, under the right conditions, this technique can also provide a contactless way to measure the external quantum efciency of a solar cell},
doi = {10.1063/1.4939047},
journal = {Review of Scientific Instruments},
number = 1,
volume = 87,
place = {United States},
year = {Thu Jan 14 00:00:00 EST 2016},
month = {Thu Jan 14 00:00:00 EST 2016}
}
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https://doi.org/10.1063/1.4939047
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