Stabilization of a monolayer tellurene phase at CdTe interfaces

Paulauskas, Tadas; Sen, Fatih G.; Sun, Ce; Longo, Paolo; Zhang, Yuan; Hla, Saw Wai; Chan, Maria K. Y.; Kim, Moon J.; Klie, Robert F.

doi:10.1039/c9nr02342a

Title: Stabilization of a monolayer tellurene phase at CdTe interfaces

Abstract

A monolayer tellurene phase is created between two CdTe crystalsviawafer bonding.

Authors:

^[1]; Sen, Fatih G. ^[2]; Sun, Ce ^[3]; Longo, Paolo ^[4]; Zhang, Yuan ^[2]; Hla, Saw Wai ^[2]; Chan, Maria K. Y. ^[2];

^[3]; Klie, Robert F. ^[5]

Univ. of Illinois at Chicago, Chicago, IL (United States). Dept.of Physics; Center for Physical Sciences and Technology, Vilnius (Lithuania)
Argonne National Lab. (ANL), Lemont, IL (United States). Center for Nanoscale Materials
The Univ. of Texas at Dallas, Richardson, TX (United States). Dept. of Materials Science and Engineering
Gatan Inc., Pleasanton, CA (United States)
Univ. of Illinois at Chicago, Chicago, IL (United States). Dept.of Physics

Publication Date:: Mon Jul 08 00:00:00 EDT 2019

Research Org.:: Argonne National Laboratory (ANL), Argonne, IL (United States); Univ. of Illinois, Chicago, IL (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE); USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1574361

Alternate Identifier(s):: OSTI ID: 1544908; OSTI ID: 1576755

Grant/Contract Number:: AC02-06CH11357; EE0005956; EE0007545; AC02-05CH11231

Resource Type:: Accepted Manuscript

Journal Name:: Nanoscale

Additional Journal Information:: Journal Volume: 11; Journal Issue: 31; Journal ID: ISSN 2040-3364

Publisher:: Royal Society of Chemistry

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 14 SOLAR ENERGY; CdTe, 2-dimensional materials, STEM

Citation Formats


                    Paulauskas, Tadas, Sen, Fatih G., Sun, Ce, Longo, Paolo, Zhang, Yuan, Hla, Saw Wai, Chan, Maria K. Y., Kim, Moon J., and Klie, Robert F. Stabilization of a monolayer tellurene phase at CdTe interfaces.  United States: N. p., 2019. 
Web.  doi:10.1039/c9nr02342a.

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                    Paulauskas, Tadas, Sen, Fatih G., Sun, Ce, Longo, Paolo, Zhang, Yuan, Hla, Saw Wai, Chan, Maria K. Y., Kim, Moon J., & Klie, Robert F. Stabilization of a monolayer tellurene phase at CdTe interfaces.  United States.  https://doi.org/10.1039/c9nr02342a

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                    Paulauskas, Tadas, Sen, Fatih G., Sun, Ce, Longo, Paolo, Zhang, Yuan, Hla, Saw Wai, Chan, Maria K. Y., Kim, Moon J., and Klie, Robert F. Mon .  
"Stabilization of a monolayer tellurene phase at CdTe interfaces".  United States.  https://doi.org/10.1039/c9nr02342a.  https://www.osti.gov/servlets/purl/1574361.

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@article{osti_1574361,

  title        = {Stabilization of a monolayer tellurene phase at CdTe interfaces},

  author       = {Paulauskas, Tadas and Sen, Fatih G. and Sun, Ce and Longo, Paolo and Zhang, Yuan and Hla, Saw Wai and Chan, Maria K. Y. and Kim, Moon J. and Klie, Robert F.},

  abstractNote = {A monolayer tellurene phase is created between two CdTe crystalsviawafer bonding.},

  doi          = {10.1039/c9nr02342a},

  journal      = {Nanoscale},

  number       = 31,

  volume       = 11,

  place        = {United States},

  year         = {Mon Jul 08 00:00:00 EDT 2019},

  month        = {Mon Jul 08 00:00:00 EDT 2019}

}

Copy to clipboard

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Works referencing / citing this record:

Atomic-Resolution EDX, HAADF, and EELS Study of GaAs1-xBix Alloys
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Similar Records

Title: Stabilization of a monolayer tellurene phase at CdTe interfaces

Abstract

Citation Formats

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A fast and robust algorithm for Bader decomposition of charge density journal, June 2006

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Etching on polar (111) surfaces of CdTe crystals studied with Auger electron spectroscopy journal, December 1987

Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set journal, July 1996

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Atomic-Resolution EDX, HAADF, and EELS Study of GaAs1-xBix Alloys journal, May 2020

Tellurene: its physical properties, scalable nanomanufacturing, and device applications
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Multivalency-Driven Formation of Te-Based Monolayer Materials: A Combined First-Principles and Experimental study
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Monolayer tellurene–metal contacts
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Superconductivity in Weyl semimetal candidate MoTe2
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Bicrystal junctions and superconducting quantum interference devices in YBa ₂ Cu ₃ O ₇ thin films
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Study on polished and etched surfaces of polar (111) CdTe by x‐ray photoelectron spectroscopy and grazing‐incidence x‐ray diffraction
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Zeeman-type spin splitting controlled by an electric field
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A fast and robust algorithm for Bader decomposition of charge density
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A simple measure of electron localization in atomic and molecular systems
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Tellurium: Fast Electrical and Atomic Transport along the Weak Interaction Direction
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Complex loss function of CdTe
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Chemical Etching of CdTe in Aqueous Solutions of H2O2-HI-Citric Acid
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From ultrasoft pseudopotentials to the projector augmented-wave method
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