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Title: Comparison of Radiation Effects in Custom-and Commercially-Fabricated Resistive Memory Devices

Abstract

The radiation response of TaO x-based RRAM devices fabricated in academic (Set A) and industrial (Set B) settings was compared. Ionization damage from a 60Co gamma source did not cause any changes in device resistance for either device type, up to 45 Mrad(Si). Displacement damage from a heavy ion beam caused the Set B in the high resistance state to decrease in resistance at 1 x 10 21 oxygen displacements per cm 3; meanwhile, the Set A devices did not exhibit any decrease in resistance due to displacement damage. Both types of devices exhibited an increase in resistance around 3 x 10 22 oxygen displacements per cm 3, possibly due to damage at the oxide/metal interfaces. These extremely high levels of damage represent near-total atomic disruption, and if this level of damage were ever reached, other circuit elements would likely fail before the RRAM devices in this study. Overall, both sets of devices were much more resistant to radiation effects than other devices reported in the literature. Displacement damage effects were only observed in the Set A devices once the displacement-induced oxygen vacancies surpassed the intrinsic vacancy concentration in the devices, suggesting that high oxygen vacancy concentration played a rolemore » in the devices’ high tolerance to displacement damage.« less

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [2];  [2];  [2];  [2];  [3];  [4]
  1. State Univ. of New York (SUNY), Albany, NY (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  3. California Inst. of Technology (CalTech), Pasadena, CA (United States). Jet Propulsion Lab. (JPL)
  4. State Univ. of New York Polytechnic Inst., Albany, NY (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1574801
Alternate Identifier(s):
OSTI ID: 1575264
Report Number(s):
SAND-2019-7690J; SAND-2019-4381J
Journal ID: ISSN 0018-9499; 677128
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Name: IEEE Transactions on Nuclear Science; Journal ID: ISSN 0018-9499
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; gamma-ray effects; ion radiation effects; resistive memory devices; semiconductor device testing; tantalum oxide; thin film devices

Citation Formats

Holt, Joshua S., Alamgir, Zahiruddin, Beckmann, Karsten, Suguitan, Nadia, Russell, Sierra, Iler, Evan, Bakhru, Hassaram, Bielejec, Edward S., Jacobs-Gedrim, Robin B., Hughart, David Russell, Marinella, Matthew, Yang-Scharlotta, Jean, and Cady, Nathaniel C. Comparison of Radiation Effects in Custom-and Commercially-Fabricated Resistive Memory Devices. United States: N. p., 2019. Web. doi:10.1109/TNS.2019.2950199.
Holt, Joshua S., Alamgir, Zahiruddin, Beckmann, Karsten, Suguitan, Nadia, Russell, Sierra, Iler, Evan, Bakhru, Hassaram, Bielejec, Edward S., Jacobs-Gedrim, Robin B., Hughart, David Russell, Marinella, Matthew, Yang-Scharlotta, Jean, & Cady, Nathaniel C. Comparison of Radiation Effects in Custom-and Commercially-Fabricated Resistive Memory Devices. United States. doi:10.1109/TNS.2019.2950199.
Holt, Joshua S., Alamgir, Zahiruddin, Beckmann, Karsten, Suguitan, Nadia, Russell, Sierra, Iler, Evan, Bakhru, Hassaram, Bielejec, Edward S., Jacobs-Gedrim, Robin B., Hughart, David Russell, Marinella, Matthew, Yang-Scharlotta, Jean, and Cady, Nathaniel C. Tue . "Comparison of Radiation Effects in Custom-and Commercially-Fabricated Resistive Memory Devices". United States. doi:10.1109/TNS.2019.2950199.
@article{osti_1574801,
title = {Comparison of Radiation Effects in Custom-and Commercially-Fabricated Resistive Memory Devices},
author = {Holt, Joshua S. and Alamgir, Zahiruddin and Beckmann, Karsten and Suguitan, Nadia and Russell, Sierra and Iler, Evan and Bakhru, Hassaram and Bielejec, Edward S. and Jacobs-Gedrim, Robin B. and Hughart, David Russell and Marinella, Matthew and Yang-Scharlotta, Jean and Cady, Nathaniel C.},
abstractNote = {The radiation response of TaOx-based RRAM devices fabricated in academic (Set A) and industrial (Set B) settings was compared. Ionization damage from a 60Co gamma source did not cause any changes in device resistance for either device type, up to 45 Mrad(Si). Displacement damage from a heavy ion beam caused the Set B in the high resistance state to decrease in resistance at 1 x 1021 oxygen displacements per cm3; meanwhile, the Set A devices did not exhibit any decrease in resistance due to displacement damage. Both types of devices exhibited an increase in resistance around 3 x 1022 oxygen displacements per cm3, possibly due to damage at the oxide/metal interfaces. These extremely high levels of damage represent near-total atomic disruption, and if this level of damage were ever reached, other circuit elements would likely fail before the RRAM devices in this study. Overall, both sets of devices were much more resistant to radiation effects than other devices reported in the literature. Displacement damage effects were only observed in the Set A devices once the displacement-induced oxygen vacancies surpassed the intrinsic vacancy concentration in the devices, suggesting that high oxygen vacancy concentration played a role in the devices’ high tolerance to displacement damage.},
doi = {10.1109/TNS.2019.2950199},
journal = {IEEE Transactions on Nuclear Science},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {10}
}

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This content will become publicly available on October 29, 2020
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