Effects of solvents and polymer on photoluminescence of transferred WS 2 monolayers

Wang, Xiaotian; Kang, Kyungnam; Godin, Kyle; Fu, Shichen; Chen, Siwei; Yang, Eui-Hyeok

doi:10.1116/1.5094543

Title: Effects of solvents and polymer on photoluminescence of transferred WS ₂ monolayers

Authors:

Wang, Xiaotian ^[1]; Kang, Kyungnam ^[1]; Godin, Kyle ^[1]; Fu, Shichen ^[1]; Chen, Siwei ^[1];

^[1]

Department of Mechanical Engineering, Stevens Institute of Technology, Hoboken, New Jersey 07030

Publication Date:: Sun Sep 01 00:00:00 EDT 2019

Sponsoring Org.:: USDOE

OSTI Identifier:: 1567966

Grant/Contract Number:: No. DE-SC0012704

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Journal of Vacuum Science and Technology B

Additional Journal Information:: Journal Name: Journal of Vacuum Science and Technology B Journal Volume: 37 Journal Issue: 5; Journal ID: ISSN 2166-2746

Publisher:: American Vacuum Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Wang, Xiaotian, Kang, Kyungnam, Godin, Kyle, Fu, Shichen, Chen, Siwei, and Yang, Eui-Hyeok. Effects of solvents and polymer on photoluminescence of transferred WS 2 monolayers.  United States: N. p., 2019. 
Web.  doi:10.1116/1.5094543.

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                    Wang, Xiaotian, Kang, Kyungnam, Godin, Kyle, Fu, Shichen, Chen, Siwei, & Yang, Eui-Hyeok. Effects of solvents and polymer on photoluminescence of transferred WS 2 monolayers.  United States.  https://doi.org/10.1116/1.5094543

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                    Wang, Xiaotian, Kang, Kyungnam, Godin, Kyle, Fu, Shichen, Chen, Siwei, and Yang, Eui-Hyeok. Sun .  
"Effects of solvents and polymer on photoluminescence of transferred WS 2 monolayers".  United States.  https://doi.org/10.1116/1.5094543.

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@article{osti_1567966,

  title        = {Effects of solvents and polymer on photoluminescence of transferred WS 2 monolayers},

  author       = {Wang, Xiaotian and Kang, Kyungnam and Godin, Kyle and Fu, Shichen and Chen, Siwei and Yang, Eui-Hyeok},

  abstractNote = {},

  doi          = {10.1116/1.5094543},

  journal      = {Journal of Vacuum Science and Technology B},

  number       = 5,

  volume       = 37,

  place        = {United States},

  year         = {Sun Sep 01 00:00:00 EDT 2019},

  month        = {Sun Sep 01 00:00:00 EDT 2019}

}

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Works referenced in this record:

Extraordinary Room-Temperature Photoluminescence in Triangular WS ₂ Monolayers
journal, December 2012

Gutiérrez, Humberto R.; Perea-López, Nestor; Elías, Ana Laura
Nano Letters, Vol. 13, Issue 8
DOI: 10.1021/nl3026357

Hysteresis in Single-Layer MoS ₂ Field Effect Transistors
journal, May 2012

Late, Dattatray J.; Liu, Bin; Matte, H. S. S. Ramakrishna
ACS Nano, Vol. 6, Issue 6
DOI: 10.1021/nn301572c

Selective etching of PDMS: Etching technique for application as a positive tone resist
journal, November 2018

Szilasi, S. Z.; Cserháti, C.
Applied Surface Science, Vol. 457
DOI: 10.1016/j.apsusc.2018.06.280

High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity
journal, April 2015

Kang, Kibum; Xie, Saien; Huang, Lujie
Nature, Vol. 520, Issue 7549
DOI: 10.1038/nature14417

Anomalous Lattice Vibrations of Single- and Few-Layer MoS ₂
journal, March 2010

Lee, Changgu; Yan, Hugen; Brus, Louis E.
ACS Nano, Vol. 4, Issue 5
DOI: 10.1021/nn1003937

Dielectric Screening of Excitons and Trions in Single-Layer MoS ₂
journal, September 2014

Lin, Yuxuan; Ling, Xi; Yu, Lili
Nano Letters, Vol. 14, Issue 10
DOI: 10.1021/nl501988y

Emerging Photoluminescence in Monolayer MoS₂
journal, April 2010

Splendiani, Andrea; Sun, Liang; Zhang, Yuanbo
Nano Letters, Vol. 10, Issue 4, p. 1271-1275
DOI: 10.1021/nl903868w

Vertical and in-plane heterostructures from WS₂/MoS₂ monolayers
journal, September 2014

Gong, Yongji; Lin, Junhao; Wang, Xingli
Nature Materials, Vol. 13, Issue 12, p. 1135-1142
DOI: 10.1038/nmat4091

Extraordinary Second Harmonic Generation in Tungsten Disulfide Monolayers
journal, July 2014

Janisch, Corey; Wang, Yuanxi; Ma, Ding
Scientific Reports, Vol. 4, Issue 1
DOI: 10.1038/srep05530

The growth scale and kinetics of WS2 monolayers under varying H2 concentration
journal, August 2015

Kang, Kyung Nam; Godin, Kyle; Yang, Eui-Hyeok
Scientific Reports, Vol. 5, Issue 1
DOI: 10.1038/srep13205

Large scale MoS ₂ nanosheet logic circuits integrated by photolithography on glass
journal, September 2016

Kwon, Hyeokjae; Jeon, Pyo Jin; Kim, Jin Sung
2D Materials, Vol. 3, Issue 4
DOI: 10.1088/2053-1583/3/4/044001

Probing the intrinsic optical quality of CVD grown MoS2
journal, November 2016

Zafar, Amina; Nan, Haiyan; Zafar, Zainab
Nano Research, Vol. 10, Issue 5
DOI: 10.1007/s12274-016-1319-z

Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
journal, January 2014

Jariwala, Deep; Sangwan, Vinod K.; Lauhon, Lincoln J.
ACS Nano, Vol. 8, Issue 2
DOI: 10.1021/nn500064s

Strain Relaxation of Monolayer WS ₂ on Plastic Substrate
journal, October 2016

Zhang, Qianhui; Chang, Zhenyue; Xu, Guanzhong
Advanced Functional Materials, Vol. 26, Issue 47
DOI: 10.1002/adfm.201603064

Growth and Optical Properties of High-Quality Monolayer WS ₂ on Graphite
journal, February 2015

Kobayashi, Yu; Sasaki, Shogo; Mori, Shohei
ACS Nano, Vol. 9, Issue 4
DOI: 10.1021/acsnano.5b00103

Elastic Properties of Chemical-Vapor-Deposited Monolayer MoS ₂ , WS ₂ , and Their Bilayer Heterostructures
journal, August 2014

Liu, Kai; Yan, Qimin; Chen, Michelle
Nano Letters, Vol. 14, Issue 9
DOI: 10.1021/nl501793a

Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions
journal, September 2014

Duan, Xidong; Wang, Chen; Shaw, Jonathan C.
Nature Nanotechnology, Vol. 9, Issue 12, p. 1024-1030
DOI: 10.1038/nnano.2014.222

Controllable Growth of Large–Size Crystalline MoS2 and Resist-Free Transfer Assisted with a Cu Thin Film
journal, December 2015

Lin, Ziyuan; Zhao, Yuda; Zhou, Changjian
Scientific Reports, Vol. 5, Issue 1
DOI: 10.1038/srep18596

Wedging Transfer of Nanostructures
journal, May 2010

Schneider, Grégory F.; Calado, Victor E.; Zandbergen, Henny
Nano Letters, Vol. 10, Issue 5
DOI: 10.1021/nl1008037

Location-specific growth and transfer of arrayed MoS ₂ monolayers with controllable size
journal, May 2017

Wang, Xiaotian; Kang, Kyungnam; Chen, Siwei
2D Materials, Vol. 4, Issue 2
DOI: 10.1088/2053-1583/aa6e69

Graphene-Assisted Antioxidation of Tungsten Disulfide Monolayers: Substrate and Electric-Field Effect
journal, February 2017

Kang, Kyungnam; Godin, Kyle; Kim, Young Duck
Advanced Materials, Vol. 29, Issue 18
DOI: 10.1002/adma.201603898

High-Performance, Highly Bendable MoS ₂ Transistors with High-K Dielectrics for Flexible Low-Power Systems
journal, May 2013

Chang, Hsiao-Yu; Yang, Shixuan; Lee, Jongho
ACS Nano, Vol. 7, Issue 6
DOI: 10.1021/nn401429w

Surface-Energy-Assisted Perfect Transfer of Centimeter-Scale Monolayer and Few-Layer MoS ₂ Films onto Arbitrary Substrates
journal, November 2014

Gurarslan, Alper; Yu, Yifei; Su, Liqin
ACS Nano, Vol. 8, Issue 11
DOI: 10.1021/nn5057673

In Situ Monitoring of the Thermal-Annealing Effect in a Monolayer of ${MoS}_{2}$
journal, March 2017

Su, Liqin; Yu, Yifei; Cao, Linyou
Physical Review Applied, Vol. 7, Issue 3
DOI: 10.1103/PhysRevApplied.7.034009

The Effect of Preparation Conditions on Raman and Photoluminescence of Monolayer WS2
journal, October 2016

McCreary, Kathleen M.; Hanbicki, Aubrey T.; Singh, Simranjeet
Scientific Reports, Vol. 6, Issue 1
DOI: 10.1038/srep35154

Electrical Characterization of Discrete Defects and Impact of Defect Density on Photoluminescence in Monolayer WS ₂
journal, January 2018

Rosenberger, Matthew R.; Chuang, Hsun-Jen; McCreary, Kathleen M.
ACS Nano, Vol. 12, Issue 2
DOI: 10.1021/acsnano.7b08566

Atomically Thin ${MoS}_{2}$ A New Direct-Gap Semiconductor
journal, September 2010

Mak, Kin Fai; Lee, Changgu; Hone, James
Physical Review Letters, Vol. 105, Issue 13, Article No.136805
DOI: 10.1103/PhysRevLett.105.136805

Synthesis of Large-Area MoS₂ Atomic Layers with Chemical Vapor Deposition
journal, March 2012

Lee, Yi-Hsien; Zhang, Xin-Quan; Zhang, Wenjing
Advanced Materials, Vol. 24, Issue 17, p. 2320-2325
DOI: 10.1002/adma.201104798

Universal Transfer and Stacking of Chemical Vapor Deposition Grown Two-Dimensional Atomic Layers with Water-Soluble Polymer Mediator
journal, May 2016

Lu, Zhixing; Sun, Lifei; Xu, Guanchen
ACS Nano, Vol. 10, Issue 5
DOI: 10.1021/acsnano.6b00961

A first-principles study on the effect of biaxial strain on the ultimate performance of monolayer MoS ₂ -based double gate field effect transistor
journal, April 2013

Mohammad Tabatabaei, Seyed; Noei, Maziar; Khaliji, Kaveh
Journal of Applied Physics, Vol. 113, Issue 16
DOI: 10.1063/1.4803032

Engineering Substrate Interactions for High Luminescence Efficiency of Transition-Metal Dichalcogenide Monolayers
journal, May 2016

Yu, Yifei; Yu, Yiling; Xu, Chao
Advanced Functional Materials, Vol. 26, Issue 26
DOI: 10.1002/adfm.201600418

Bandgap Engineering of Strained Monolayer and Bilayer MoS₂
journal, July 2013

Conley, Hiram J.; Wang, Bin; Ziegler, Jed I.
Nano Letters, Vol. 13, Issue 8, p. 3626-3630
DOI: 10.1021/nl4014748

Increased monolayer domain size and patterned growth of tungsten disulfide through controlling surface energy of substrates
journal, July 2016

Godin, Kyle; Kang, Kyungnam; Fu, Shichen
Journal of Physics D: Applied Physics, Vol. 49, Issue 32
DOI: 10.1088/0022-3727/49/32/325304

Large-Area Epitaxial Monolayer MoS ₂
journal, February 2015

Dumcenco, Dumitru; Ovchinnikov, Dmitry; Marinov, Kolyo
ACS Nano, Vol. 9, Issue 4
DOI: 10.1021/acsnano.5b01281

The Influence of Water on the Optical Properties of Single-Layer Molybdenum Disulfide
journal, March 2015

Varghese, Joseph O.; Agbo, Peter; Sutherland, Alexander M.
Advanced Materials, Vol. 27, Issue 17
DOI: 10.1002/adma.201500555

Influence of the substrate material on the optical properties of tungsten diselenide monolayers
journal, March 2017

Lippert, Sina; Schneider, Lorenz Maximilian; Renaud, Dylan
2D Materials, Vol. 4, Issue 2
DOI: 10.1088/2053-1583/aa5b21

Ultralow-power all-optical processing of high-speed data signals in deposited silicon waveguides
journal, January 2012

Wang, Ke-Yao; Petrillo, Keith G.; Foster, Mark A.
Optics Express, Vol. 20, Issue 22
DOI: 10.1364/OE.20.024600

Atomically thin p–n junctions with van der Waals heterointerfaces
journal, August 2014

Lee, Chul-Ho; Lee, Gwan-Hyoung; van der Zande, Arend M.
Nature Nanotechnology, Vol. 9, Issue 9
DOI: 10.1038/nnano.2014.150

Transfer of CVD-Grown Monolayer Graphene onto Arbitrary Substrates
journal, August 2011

Suk, Ji Won; Kitt, Alexander; Magnuson, Carl W.
ACS Nano, Vol. 5, Issue 9
DOI: 10.1021/nn201207c

Lateral heterojunctions within monolayer MoSe₂–WSe₂ semiconductors
journal, August 2014

Huang, Chunming; Wu, Sanfeng; Sanchez, Ana M.
Nature Materials, Vol. 13, Issue 12, p. 1096-1101
DOI: 10.1038/nmat4064

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Title: Effects of solvents and polymer on photoluminescence of transferred WS 2 monolayers

Citation Formats

Extraordinary Room-Temperature Photoluminescence in Triangular WS 2 Monolayers journal, December 2012

Hysteresis in Single-Layer MoS 2 Field Effect Transistors journal, May 2012

Selective etching of PDMS: Etching technique for application as a positive tone resist journal, November 2018

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Extraordinary Second Harmonic Generation in Tungsten Disulfide Monolayers journal, July 2014

The growth scale and kinetics of WS2 monolayers under varying H2 concentration journal, August 2015

Large scale MoS 2 nanosheet logic circuits integrated by photolithography on glass journal, September 2016

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Title: Effects of solvents and polymer on photoluminescence of transferred WS ₂ monolayers

Extraordinary Room-Temperature Photoluminescence in Triangular WS ₂ Monolayers
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Hysteresis in Single-Layer MoS ₂ Field Effect Transistors
journal, May 2012

Selective etching of PDMS: Etching technique for application as a positive tone resist
journal, November 2018

High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity
journal, April 2015

Anomalous Lattice Vibrations of Single- and Few-Layer MoS ₂
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Dielectric Screening of Excitons and Trions in Single-Layer MoS ₂
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Emerging Photoluminescence in Monolayer MoS₂
journal, April 2010

Vertical and in-plane heterostructures from WS₂/MoS₂ monolayers
journal, September 2014

Extraordinary Second Harmonic Generation in Tungsten Disulfide Monolayers
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The growth scale and kinetics of WS2 monolayers under varying H2 concentration
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Strain Relaxation of Monolayer WS ₂ on Plastic Substrate
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Growth and Optical Properties of High-Quality Monolayer WS ₂ on Graphite
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Elastic Properties of Chemical-Vapor-Deposited Monolayer MoS ₂ , WS ₂ , and Their Bilayer Heterostructures
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Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions
journal, September 2014

Controllable Growth of Large–Size Crystalline MoS2 and Resist-Free Transfer Assisted with a Cu Thin Film
journal, December 2015

Wedging Transfer of Nanostructures
journal, May 2010

Location-specific growth and transfer of arrayed MoS ₂ monolayers with controllable size
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journal, February 2017

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journal, November 2014

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journal, March 2017

The Effect of Preparation Conditions on Raman and Photoluminescence of Monolayer WS2
journal, October 2016

Electrical Characterization of Discrete Defects and Impact of Defect Density on Photoluminescence in Monolayer WS ₂
journal, January 2018

Atomically Thin ${MoS}_{2}$ A New Direct-Gap Semiconductor
journal, September 2010

Synthesis of Large-Area MoS₂ Atomic Layers with Chemical Vapor Deposition
journal, March 2012

Universal Transfer and Stacking of Chemical Vapor Deposition Grown Two-Dimensional Atomic Layers with Water-Soluble Polymer Mediator
journal, May 2016

A first-principles study on the effect of biaxial strain on the ultimate performance of monolayer MoS ₂ -based double gate field effect transistor
journal, April 2013

Engineering Substrate Interactions for High Luminescence Efficiency of Transition-Metal Dichalcogenide Monolayers
journal, May 2016

Bandgap Engineering of Strained Monolayer and Bilayer MoS₂
journal, July 2013

Increased monolayer domain size and patterned growth of tungsten disulfide through controlling surface energy of substrates
journal, July 2016

Large-Area Epitaxial Monolayer MoS ₂
journal, February 2015

The Influence of Water on the Optical Properties of Single-Layer Molybdenum Disulfide
journal, March 2015

Influence of the substrate material on the optical properties of tungsten diselenide monolayers
journal, March 2017

Ultralow-power all-optical processing of high-speed data signals in deposited silicon waveguides
journal, January 2012

Atomically thin p–n junctions with van der Waals heterointerfaces
journal, August 2014

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