Deterministic Ferroelastic Domain Switching Using Ferroelectric Bilayers

Zhang, Yangyang; Han, Myung-Geun; Garlow, Joseph A.; Tan, Yueze; Xue, Fei; Chen, Long-Qing; Munroe, Paul; Valanoor, Nagarajan; Zhu, Yimei

doi:10.1021/acs.nanolett.9b01782

Title: Deterministic Ferroelastic Domain Switching Using Ferroelectric Bilayers

Abstract

Composition gradients, or dissimilar ferroelectric bilayers, demonstrate colossal electromechanical figures of merit attributed to the motion of ferroelastic domain walls. Yet, mechanistic understanding of polarization switching pathways that drive ferroelastic switching in these systems remains elusive. Here, the crucial roles of strain and electrostatic boundary conditions in ferroelectric bilayer systems are revealed, which underpin their ferroelastic switching dynamics. Using in situ electrical biasing in the transmission electron microscope (TEM), the motion of ferroelastic domain walls is investigated in a tetragonal (T) Pb(Zr,Ti)O₃ (PZT)/rhombohedral (R) PZT epitaxial bilayer system. Atomic resolution electron microscopy, in tandem with phase field simulations, indicates that ferroelastic switching is triggered by predominant nucleation at the triple domain junctions located at the interface between the T/R layers. Furthermore, this interfacial nucleation leads to systematic reversable reorientation of ferroelastic domain walls. Finally, deterministic ferroelastic domain switching, driven by the interfacial strain and electrostatic boundary conditions in the ferroelectric bilayer, provides a viable pathway toward novel design of miniaturized energy-efficient electromechanical devices.

Authors:

Zhang, Yangyang ^[1];

^[2]; Garlow, Joseph A. ^[2]; Tan, Yueze ^[3]; Xue, Fei ^[3]; Chen, Long-Qing ^[3]; Munroe, Paul ^[4];

^[4];

^[2]

Brookhaven National Lab. (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.; Univ. of New South Wales, Sydney, NSW (Australia). School of Materials Science and Engineering
Brookhaven National Lab. (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.
Pennsylvania State Univ., University Park, PA (United States). Dept. of Materials Science and Engineering
Univ. of New South Wales, Sydney, NSW (Australia). School of Materials Science and Engineering

Publication Date:: Wed Jul 03 00:00:00 EDT 2019

Research Org.:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1566820

Report Number(s):: BNL-212108-2019-JAAM
Journal ID: ISSN 1530-6984

Grant/Contract Number:: SC0012704

Resource Type:: Accepted Manuscript

Journal Name:: Nano Letters

Additional Journal Information:: Journal Volume: 19; Journal Issue: 8; Journal ID: ISSN 1530-6984

Publisher:: American Chemical Society

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ferroelectric bilayer; ferroelastic switching; domain wall reorientation; in-situ TEM

Citation Formats


                    Zhang, Yangyang, Han, Myung-Geun, Garlow, Joseph A., Tan, Yueze, Xue, Fei, Chen, Long-Qing, Munroe, Paul, Valanoor, Nagarajan, and Zhu, Yimei. Deterministic Ferroelastic Domain Switching Using Ferroelectric Bilayers.  United States: N. p., 2019. 
Web.  doi:10.1021/acs.nanolett.9b01782.

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                    Zhang, Yangyang, Han, Myung-Geun, Garlow, Joseph A., Tan, Yueze, Xue, Fei, Chen, Long-Qing, Munroe, Paul, Valanoor, Nagarajan, & Zhu, Yimei. Deterministic Ferroelastic Domain Switching Using Ferroelectric Bilayers.  United States.  https://doi.org/10.1021/acs.nanolett.9b01782

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                    Zhang, Yangyang, Han, Myung-Geun, Garlow, Joseph A., Tan, Yueze, Xue, Fei, Chen, Long-Qing, Munroe, Paul, Valanoor, Nagarajan, and Zhu, Yimei. Wed .  
"Deterministic Ferroelastic Domain Switching Using Ferroelectric Bilayers".  United States.  https://doi.org/10.1021/acs.nanolett.9b01782.  https://www.osti.gov/servlets/purl/1566820.

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@article{osti_1566820,

  title        = {Deterministic Ferroelastic Domain Switching Using Ferroelectric Bilayers},

  author       = {Zhang, Yangyang and Han, Myung-Geun and Garlow, Joseph A. and Tan, Yueze and Xue, Fei and Chen, Long-Qing and Munroe, Paul and Valanoor, Nagarajan and Zhu, Yimei},

  abstractNote = {Composition gradients, or dissimilar ferroelectric bilayers, demonstrate colossal electromechanical figures of merit attributed to the motion of ferroelastic domain walls. Yet, mechanistic understanding of polarization switching pathways that drive ferroelastic switching in these systems remains elusive. Here, the crucial roles of strain and electrostatic boundary conditions in ferroelectric bilayer systems are revealed, which underpin their ferroelastic switching dynamics. Using in situ electrical biasing in the transmission electron microscope (TEM), the motion of ferroelastic domain walls is investigated in a tetragonal (T) Pb(Zr,Ti)O3 (PZT)/rhombohedral (R) PZT epitaxial bilayer system. Atomic resolution electron microscopy, in tandem with phase field simulations, indicates that ferroelastic switching is triggered by predominant nucleation at the triple domain junctions located at the interface between the T/R layers. Furthermore, this interfacial nucleation leads to systematic reversable reorientation of ferroelastic domain walls. Finally, deterministic ferroelastic domain switching, driven by the interfacial strain and electrostatic boundary conditions in the ferroelectric bilayer, provides a viable pathway toward novel design of miniaturized energy-efficient electromechanical devices.},

  doi          = {10.1021/acs.nanolett.9b01782},

  journal      = {Nano Letters},

  number       = 8,

  volume       = 19,

  place        = {United States},

  year         = {Wed Jul 03 00:00:00 EDT 2019},

  month        = {Wed Jul 03 00:00:00 EDT 2019}

}

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https://doi.org/10.1021/acs.nanolett.9b01782

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Figures / Tables:

Figure 1: (a) A low magnification TEM image of the cross-sectional sample with the tungsten tip brought into contact with Pt layer. (b) Schematic of the experimental set up for in situ TEM under external bias, where LSMO is used as the bottom electrode on the STO substrate while goldmore »

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