Study of trap levels in β-Ga2O3 by thermoluminescence spectroscopy

Islam, Md Minhazul; Rana, Dhan; Hernandez, Armando; Haseman, Micah; Selim, F. A.

doi:10.1063/1.5066424

Title: Study of trap levels in β-Ga₂O₃ by thermoluminescence spectroscopy

Journal Article · 01 February 2019 · Journal of Applied Physics

DOI: https://doi.org/10.1063/1.5066424 · OSTI ID:1566657

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Bowling Green State Univ., OH (United States). Center for Photochemical Sciences, and Dept. of Physics and Astronomy
Bowling Green State Univ., OH (United States). Dept. of Physics and Astronomy

Electronic defects with shallow and deep levels in β-Ga₂O₃ single crystals were investigated by thermoluminescence (TL) spectroscopy. Undoped, Fe-doped, Sn-doped, and Mg-doped β-Ga₂O₃ single crystals grown by different methods were studied, and thermal activation energies of defects were calculated using the initial rise method. Hall-effect measurements and optical absorption spectroscopy were performed to determine the electrical transport properties and optical bandgaps. It was found that the dopants do not have any effect on the bandgap energy, which is important for comparing the trap levels in the samples. Three deep trap levels were found in the undoped crystals; the activation energy, ED, and concentration of defect centers for all of them have slightly changed after doping with Fe and Mg. Fe doping induced an additional defect center with activation energy of 0.62 eV. The measurements revealed the absence of TL emission in Sn doped crystals indicating that Sn doping may quench luminescence centers or modified some original electronic defects to inactive electron traps. The second interpretation “decrease of traps” may align with the successful incorporation of Sn as a donor and the high conductivity of Sn doped crystals revealed from Hall-effect measurements. This work also illustrates that the semi-insulating characteristics of Fe and Mg doped Ga₂O₃ are associated with the increase of the concentration of original traps in the crystal as well as the formation of new electron traps acting as deep acceptors. Recombination centers in all crystals are assumed to be associated with iron impurities.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Fundamental Understanding of Transport Under Reactor Extremes (FUTURE); Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC52-06NA25396

OSTI ID:: 1566657

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 125; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Computational identification of Ga-vacancy related electron paramagnetic resonance centers in β -Ga ₂ O ₃ Skachkov, Dmitry; Lambrecht, Walter R. L.; von Bardeleben, Hans Jürgen Journal of Applied Physics, Vol. 125, Issue 18 https://doi.org/10.1063/1.5092626	journal	May 2019
Deep donors and acceptors in β-Ga ₂ O ₃ crystals: Determination of the Fe ^2+/3+ level by a noncontact method Lenyk, C. A.; Gustafson, T. D.; Halliburton, L. E. Journal of Applied Physics, Vol. 126, Issue 24 https://doi.org/10.1063/1.5133051	journal	December 2019

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