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Title: Nanostructured silicon substrates of nanopore morphology for buffer-layer free nanoheteroepitaxial growth of InP films

Abstract

Enhanced stress relief via nanopores.

Authors:
ORCiD logo [1];  [2];  [2]
  1. nLiten Energy Corporation, California, USA, School of Electrical, Computer, and Energy Engineering, Arizona State University
  2. School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, USA
Publication Date:
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
OSTI Identifier:
1560331
Grant/Contract Number:  
EE0007369
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
CrystEngComm
Additional Journal Information:
Journal Name: CrystEngComm Journal Volume: 21 Journal Issue: 37; Journal ID: ISSN 1466-8033
Publisher:
Royal Society of Chemistry (RSC)
Country of Publication:
United Kingdom
Language:
English

Citation Formats

Chin, Alan H., Gan, Lin, and Ning, Cun-Zheng. Nanostructured silicon substrates of nanopore morphology for buffer-layer free nanoheteroepitaxial growth of InP films. United Kingdom: N. p., 2019. Web. doi:10.1039/C9CE01046G.
Chin, Alan H., Gan, Lin, & Ning, Cun-Zheng. Nanostructured silicon substrates of nanopore morphology for buffer-layer free nanoheteroepitaxial growth of InP films. United Kingdom. doi:10.1039/C9CE01046G.
Chin, Alan H., Gan, Lin, and Ning, Cun-Zheng. Fri . "Nanostructured silicon substrates of nanopore morphology for buffer-layer free nanoheteroepitaxial growth of InP films". United Kingdom. doi:10.1039/C9CE01046G.
@article{osti_1560331,
title = {Nanostructured silicon substrates of nanopore morphology for buffer-layer free nanoheteroepitaxial growth of InP films},
author = {Chin, Alan H. and Gan, Lin and Ning, Cun-Zheng},
abstractNote = {Enhanced stress relief via nanopores.},
doi = {10.1039/C9CE01046G},
journal = {CrystEngComm},
number = 37,
volume = 21,
place = {United Kingdom},
year = {2019},
month = {9}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1039/C9CE01046G

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