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Title: Locally defined quantum emission from epitaxial few-layer tungsten diselenide

Abstract

Recently, single photons have been observed emanating from point defects in two-dimensional (2D) materials including WSe2, WS2, hexagonal-BN, and GaSe, with their energy residing in the direct electronic bandgap. Here, we report single photon emission from a nominal weakly emitting indirect bandgap 2D material through deterministic strain induced localization. A method is demonstrated to create highly spatially localized and spectrally well-separated defect emission sites in the 750–800 nm regime in a continuous epitaxial film of few-layer WSe2 synthesized by a multistep diffusion-mediated gas source chemical vapor deposition technique. To separate the effects of mechanical strain from the substrate or dielectric-environment induced changes in the electronic structure, we created arrays of large isotropically etched ultrasharp silicon dioxide tips with spatial dimensions on the order of 10 μm. We use bending based on the small radius of these tips—on the order of 4 nm—to impart electronic localization effects through morphology alone, as the WSe2 film experiences a uniform SiO2 dielectric environment in the device geometry chosen for this investigation. When the continuous WSe2 film was transferred onto an array of SiO2 tips, an ~87% yield of localized emission sites on the tips was observed. The outcomes of this report provide fundamental guidelinesmore » for the integration of beyond-lab-scale quantum materials into photonic device architectures for all-optical quantum information applications.« less

Authors:
 [1];  [2];  [3];  [4];  [5];  [6];  [6]; ORCiD logo [7];  [8]; ORCiD logo [9]
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  1. Univ. of Connecticut, Storrs, CT (United States). Dept. of Mechanical Engineering. Inst. of Materials Science
  2. Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States). Sensors Directorate; KBRwyle, Dayton, OH (United States)
  3. Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States). Sensors Directorate
  4. Univ. of Connecticut, Storrs, CT (United States). Dept. of Mechanical Engineering. Inst. of Materials Science; Univ. of Arizona, Tucson, AZ (United States). Dept. of Aerospace and Mechanical Engineering
  5. Univ. of Oregon, Eugene, OR (United States). Center for Advanced Materials Characterization in Oregon (CAMCOR)
  6. Pennsylvania State Univ., University Park, PA (United States). Dept. of Materials Science and Engineering
  7. Pennsylvania State Univ., University Park, PA (United States). Dept. of Materials Science and Engineering. 2D Crystal Consortium–Materials Innovation Platform. Materials Research Inst.
  8. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  9. Univ. of Connecticut, Storrs, CT (United States). Dept. of Mechanical Engineering. Inst. of Materials Science; Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Univ. of Connecticut, Storrs, CT (United States); Pennsylvania State Univ., University Park, PA (United States); Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States)
Sponsoring Org.:
USDOE Office of Science (SC); USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF); US Air Force Office of Scientific Research (AFOSR)
OSTI Identifier:
1542843
Alternate Identifier(s):
OSTI ID: 1523319
Report Number(s):
LA-UR-18-27142
Journal ID: ISSN 0003-6951
Grant/Contract Number:  
89233218CNA000001; CAREER-1553987; REU-1560098; DMR-1539916; FA9550-15RYCOR159
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 114; Journal Issue: 21; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Wu, Wei, Dass, Chandriker K., Hendrickson, Joshua R., Montaño, Raul D., Fischer, Robert E., Zhang, Xiaotian, Choudhury, Tanushree H., Redwing, Joan M., Wang, Yongqiang, and Pettes, Michael T. Locally defined quantum emission from epitaxial few-layer tungsten diselenide. United States: N. p., 2019. Web. doi:10.1063/1.5091779.
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Wu, Wei, Dass, Chandriker K., Hendrickson, Joshua R., Montaño, Raul D., Fischer, Robert E., Zhang, Xiaotian, Choudhury, Tanushree H., Redwing, Joan M., Wang, Yongqiang, & Pettes, Michael T. Locally defined quantum emission from epitaxial few-layer tungsten diselenide. United States. https://doi.org/10.1063/1.5091779
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Wu, Wei, Dass, Chandriker K., Hendrickson, Joshua R., Montaño, Raul D., Fischer, Robert E., Zhang, Xiaotian, Choudhury, Tanushree H., Redwing, Joan M., Wang, Yongqiang, and Pettes, Michael T. Wed . "Locally defined quantum emission from epitaxial few-layer tungsten diselenide". United States. https://doi.org/10.1063/1.5091779. https://www.osti.gov/servlets/purl/1542843.
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@article{osti_1542843,
title = {Locally defined quantum emission from epitaxial few-layer tungsten diselenide},
author = {Wu, Wei and Dass, Chandriker K. and Hendrickson, Joshua R. and Montaño, Raul D. and Fischer, Robert E. and Zhang, Xiaotian and Choudhury, Tanushree H. and Redwing, Joan M. and Wang, Yongqiang and Pettes, Michael T.},
abstractNote = {Recently, single photons have been observed emanating from point defects in two-dimensional (2D) materials including WSe2, WS2, hexagonal-BN, and GaSe, with their energy residing in the direct electronic bandgap. Here, we report single photon emission from a nominal weakly emitting indirect bandgap 2D material through deterministic strain induced localization. A method is demonstrated to create highly spatially localized and spectrally well-separated defect emission sites in the 750–800 nm regime in a continuous epitaxial film of few-layer WSe2 synthesized by a multistep diffusion-mediated gas source chemical vapor deposition technique. To separate the effects of mechanical strain from the substrate or dielectric-environment induced changes in the electronic structure, we created arrays of large isotropically etched ultrasharp silicon dioxide tips with spatial dimensions on the order of 10 μm. We use bending based on the small radius of these tips—on the order of 4 nm—to impart electronic localization effects through morphology alone, as the WSe2 film experiences a uniform SiO2 dielectric environment in the device geometry chosen for this investigation. When the continuous WSe2 film was transferred onto an array of SiO2 tips, an ~87% yield of localized emission sites on the tips was observed. The outcomes of this report provide fundamental guidelines for the integration of beyond-lab-scale quantum materials into photonic device architectures for all-optical quantum information applications.},
doi = {10.1063/1.5091779},
journal = {Applied Physics Letters},
number = 21,
volume = 114,
place = {United States},
year = {2019},
month = {5}
}
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Journal Article:
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https://doi.org/10.1063/1.5091779
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Figures / Tables:

Table 1 Table 1: Comparison of single photon emission sources in atomically thin materials (E, $\lambda$, and $\tau$ denote the localized emission energy, wavelength, and lifetime respectively, “FSSE” denotes the fine structure splitting energy, and $T$ denotes the temperature at which the observations were made).
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