Effects of defects and dephasing on charge and spin currents in two-dimensional topological insulators
Abstract
Using the nonequilibrium Keldysh Green's function formalism, we investigate the effect of defects on the electronic structure and transport properties of two-dimensional topological insulators (TI). We demonstrate how the spatial flow of charge changes between the topologically protected edge and bulk states and show that elastically and inelastically scattering defects that preserve the time-reversal symmetry of the TI lead to qualitatively different effects on the TI's local electronic structure and its transport properties. Moreover, we show that the recently predicted ability to create highly spin-polarized currents by breaking the time-reversal symmetry of the TI via magnetic defects [J. S. Van Dyke and D. K. Morr, Phys. Rev. B 93, 081401 (2016)] is robust against the inclusion of a Rashba spin-orbit interaction and the effects of dephasing, and remains unaffected by changes over a wide range of the TI's parameters. We discuss how the sign of the induced spin currents changes under symmetry operations, such as reversal of bias and gate voltages, or spatial reflections. Finally, we show that the insight into the interplay between topology and symmetry of the magnetic defects can be employed for the creation of intriguing quantum phenomena, such as highly localized magnetic fields inside the TI.
- Authors:
-
- Univ. of Illinois, Chicago, IL (United States)
- Publication Date:
- Research Org.:
- Univ. of Illinois at Urbana-Champaign, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1535841
- Alternate Identifier(s):
- OSTI ID: 1341918
- Grant/Contract Number:
- FG02-05ER46225
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 95; Journal Issue: 4; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Materials Science; Physics; Defects; Topological insulators; Nonequilibrium Green's function
Citation Formats
Van Dyke, John S., and Morr, Dirk K. Effects of defects and dephasing on charge and spin currents in two-dimensional topological insulators. United States: N. p., 2017.
Web. doi:10.1103/physrevb.95.045151.
Van Dyke, John S., & Morr, Dirk K. Effects of defects and dephasing on charge and spin currents in two-dimensional topological insulators. United States. https://doi.org/10.1103/physrevb.95.045151
Van Dyke, John S., and Morr, Dirk K. Mon .
"Effects of defects and dephasing on charge and spin currents in two-dimensional topological insulators". United States. https://doi.org/10.1103/physrevb.95.045151. https://www.osti.gov/servlets/purl/1535841.
@article{osti_1535841,
title = {Effects of defects and dephasing on charge and spin currents in two-dimensional topological insulators},
author = {Van Dyke, John S. and Morr, Dirk K.},
abstractNote = {Using the nonequilibrium Keldysh Green's function formalism, we investigate the effect of defects on the electronic structure and transport properties of two-dimensional topological insulators (TI). We demonstrate how the spatial flow of charge changes between the topologically protected edge and bulk states and show that elastically and inelastically scattering defects that preserve the time-reversal symmetry of the TI lead to qualitatively different effects on the TI's local electronic structure and its transport properties. Moreover, we show that the recently predicted ability to create highly spin-polarized currents by breaking the time-reversal symmetry of the TI via magnetic defects [J. S. Van Dyke and D. K. Morr, Phys. Rev. B 93, 081401 (2016)] is robust against the inclusion of a Rashba spin-orbit interaction and the effects of dephasing, and remains unaffected by changes over a wide range of the TI's parameters. We discuss how the sign of the induced spin currents changes under symmetry operations, such as reversal of bias and gate voltages, or spatial reflections. Finally, we show that the insight into the interplay between topology and symmetry of the magnetic defects can be employed for the creation of intriguing quantum phenomena, such as highly localized magnetic fields inside the TI.},
doi = {10.1103/physrevb.95.045151},
journal = {Physical Review B},
number = 4,
volume = 95,
place = {United States},
year = {Mon Jan 30 00:00:00 EST 2017},
month = {Mon Jan 30 00:00:00 EST 2017}
}
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Works referencing / citing this record:
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