Suppressing the spin relaxation of electrons in silicon
Abstract
Uniaxial compressive strain along the [001] direction strongly suppresses the spin relaxation in silicon. When the strain level is large enough so that electrons are redistributed only in the two valleys along the strain axis, the dominant scattering mechanisms are quenched and electrons mainly experience intra-axis scattering processes (intravalley or intervalley scattering within valleys on the same crystal axis). In this work, we first derive the spin-flip matrix elements due to intra-axis electron scattering off impurities, and then provide a comprehensive model of the spin relaxation time due to all possible interactions of conduction-band electrons with impurities and phonons. We predict a nearly three orders of magnitude improvement in the spin relaxation time of ~1019 cm-3 antimony-doped silicon (Si:Sb) at low temperatures.
- Authors:
-
- Univ. of Rochester, NY (United States)
- Publication Date:
- Research Org.:
- Univ. of Rochester, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC); National Science Foundation (NSF); Defense Threat Reduction Agency (DTRA)
- OSTI Identifier:
- 1535832
- Alternate Identifier(s):
- OSTI ID: 1339770
- Grant/Contract Number:
- SC0014349; DMR-1503601; HDTRA1-13-1-0013
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 95; Journal Issue: 3; Journal ID: ISSN 2469-9950
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Spin relaxation; spintronics; strain; k dot p method
Citation Formats
Chalaev, Oleg, Song, Yang, and Dery, Hanan. Suppressing the spin relaxation of electrons in silicon. United States: N. p., 2017.
Web. doi:10.1103/physrevb.95.035204.
Chalaev, Oleg, Song, Yang, & Dery, Hanan. Suppressing the spin relaxation of electrons in silicon. United States. https://doi.org/10.1103/physrevb.95.035204
Chalaev, Oleg, Song, Yang, and Dery, Hanan. Tue .
"Suppressing the spin relaxation of electrons in silicon". United States. https://doi.org/10.1103/physrevb.95.035204. https://www.osti.gov/servlets/purl/1535832.
@article{osti_1535832,
title = {Suppressing the spin relaxation of electrons in silicon},
author = {Chalaev, Oleg and Song, Yang and Dery, Hanan},
abstractNote = {Uniaxial compressive strain along the [001] direction strongly suppresses the spin relaxation in silicon. When the strain level is large enough so that electrons are redistributed only in the two valleys along the strain axis, the dominant scattering mechanisms are quenched and electrons mainly experience intra-axis scattering processes (intravalley or intervalley scattering within valleys on the same crystal axis). In this work, we first derive the spin-flip matrix elements due to intra-axis electron scattering off impurities, and then provide a comprehensive model of the spin relaxation time due to all possible interactions of conduction-band electrons with impurities and phonons. We predict a nearly three orders of magnitude improvement in the spin relaxation time of ~1019 cm-3 antimony-doped silicon (Si:Sb) at low temperatures.},
doi = {10.1103/physrevb.95.035204},
journal = {Physical Review B},
number = 3,
volume = 95,
place = {United States},
year = {Tue Jan 17 00:00:00 EST 2017},
month = {Tue Jan 17 00:00:00 EST 2017}
}
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