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Title: Radiation-induced direct bandgap transition in few-layer MoS2

Abstract

We report photoluminescence (PL) spectroscopy of air-suspended and substrate-supported molybdenum disulfide (MoS2) taken before and after exposure to proton radiation. For 2-, 3-, and 4-layer MoS2, the radiation causes a substantial (>10×) suppression of the indirect bandgap emission, likely due to a radiation-induced decoupling of the layers. For all samples measured (including the monolayer), we see the emergence of a defect-induced shoulder peak at around 1.7 eV, which is redshifted from the main direct bandgap emission at 1.85 eV. Here, defects induced by the radiation trap the excitons and cause them to be redshifted from the main direct band emission. After annealing, the defect-induced sideband disappears, but the indirect band emission remains suppressed, indicating a permanent transition into a direct bandgap material. While suspended 2-, 3-, and 4-layer MoS2 show no change in the intensity of the direct band emission after radiation exposure, substrate-supported MoS2 exhibits an approximately 2-fold increase in the direct bandgap emission after irradiation. Suspended monolayer MoS2 shows a 2–3× drop in PL intensity; however, substrate-supported monolayer MoS2 shows a 2-fold increase in the direct band emission.

Authors:
 [1];  [1];  [1];  [2];  [2]; ORCiD logo [1]
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  1. Univ. of Southern California, Los Angeles, CA (United States)
  2. The Aerospace Corporation, El Segundo, CA (United States)
Publication Date:
Research Org.:
Univ. of Southern California, Los Angeles, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1535349
Alternate Identifier(s):
OSTI ID: 1395188
Grant/Contract Number:  
FG02-07ER46376
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 13; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Physics

Citation Formats

Wang, Bo, Yang, Sisi, Chen, Jihan, Mann, Colin, Bushmaker, Adam, and Cronin, Stephen B. Radiation-induced direct bandgap transition in few-layer MoS2. United States: N. p., 2017. Web. doi:10.1063/1.5005121.
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Wang, Bo, Yang, Sisi, Chen, Jihan, Mann, Colin, Bushmaker, Adam, & Cronin, Stephen B. Radiation-induced direct bandgap transition in few-layer MoS2. United States. https://doi.org/10.1063/1.5005121
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Wang, Bo, Yang, Sisi, Chen, Jihan, Mann, Colin, Bushmaker, Adam, and Cronin, Stephen B. Wed . "Radiation-induced direct bandgap transition in few-layer MoS2". United States. https://doi.org/10.1063/1.5005121. https://www.osti.gov/servlets/purl/1535349.
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@article{osti_1535349,
title = {Radiation-induced direct bandgap transition in few-layer MoS2},
author = {Wang, Bo and Yang, Sisi and Chen, Jihan and Mann, Colin and Bushmaker, Adam and Cronin, Stephen B.},
abstractNote = {We report photoluminescence (PL) spectroscopy of air-suspended and substrate-supported molybdenum disulfide (MoS2) taken before and after exposure to proton radiation. For 2-, 3-, and 4-layer MoS2, the radiation causes a substantial (>10×) suppression of the indirect bandgap emission, likely due to a radiation-induced decoupling of the layers. For all samples measured (including the monolayer), we see the emergence of a defect-induced shoulder peak at around 1.7 eV, which is redshifted from the main direct bandgap emission at 1.85 eV. Here, defects induced by the radiation trap the excitons and cause them to be redshifted from the main direct band emission. After annealing, the defect-induced sideband disappears, but the indirect band emission remains suppressed, indicating a permanent transition into a direct bandgap material. While suspended 2-, 3-, and 4-layer MoS2 show no change in the intensity of the direct band emission after radiation exposure, substrate-supported MoS2 exhibits an approximately 2-fold increase in the direct bandgap emission after irradiation. Suspended monolayer MoS2 shows a 2–3× drop in PL intensity; however, substrate-supported monolayer MoS2 shows a 2-fold increase in the direct band emission.},
doi = {10.1063/1.5005121},
journal = {Applied Physics Letters},
number = 13,
volume = 111,
place = {United States},
year = {Wed Sep 27 00:00:00 EDT 2017},
month = {Wed Sep 27 00:00:00 EDT 2017}
}
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https://doi.org/10.1063/1.5005121
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Works referenced in this record:

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journal, April 2017

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journal, February 2014

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journal, August 2014

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journal, January 2015

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    Works referencing / citing this record:

    Electronic transport in MoSe 2 FETs modified by latent tracks created by swift heavy ion irradiation
    journal, January 2019

    • Zhang, S. X.; Liu, J.; Zeng, J.
    • Journal of Physics D: Applied Physics, Vol. 52, Issue 12
    • DOI: 10.1088/1361-6463/aafd82

    Recent advances in synthesis and biosensors of two-dimensional MoS 2
    journal, October 2019

    Controlling neutral and charged excitons in MoS 2 with defects
    journal, January 2020

    • Burns, Kory; Tan, Anne Marie Z.; Gabriel, Adam
    • Journal of Materials Research, Vol. 35, Issue 8
    • DOI: 10.1557/jmr.2019.404

    Recent Progress on Irradiation-Induced Defect Engineering of Two-Dimensional 2H-MoS2 Few Layers
    journal, February 2019

    • Zhao, Guang-Yi; Deng, Hua; Tyree, Nathaniel
    • Applied Sciences, Vol. 9, Issue 4
    • DOI: 10.3390/app9040678
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