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Title: Edge states in the honeycomb reconstruction of two-dimensional silicon nanosheets

Abstract

Electrons confined within a two-dimensional (2D) honeycomb potential can host localized electronic states at their edges. These edge states exhibit distinctive electronic properties relative to the bulk, and may result in spin polarization or topologically protected conduction. However, the synthesis and characterization of well-defined 2D structures which host such edge states remains challenging. Here, we confirm the presence of a two-dimensional electron gas (2DEG) and find evidence for unique edge states in the Ag-induced honeycomb surface reconstruction of silicon nanosheets (SiNS) grown on Ag(111). Atomic-scale scanning tunneling microscopy and computational modeling confirm that the electronic properties of the SiNS surface are determined by the honeycomb surface reconstruction. This surface presents ordered edge terminations with distinct spectroscopic signatures associated with the edge orientation, and calculations suggest that Rashba-type spin orbit coupling may result in spin-polarized conduction along certain edge orientations. Furthermore, this quantification of the electronic structure of edge states in SiNS 2DEGs will inform ongoing efforts to engineer quantum effects in silicon-based nanostructures.

Authors:
 [1];  [2];  [1];  [3];  [4];  [4]; ORCiD logo [4]; ORCiD logo [5];  [6];  [7]; ORCiD logo [8];  [3]
+ Show Author Affiliations
  1. Argonne National Lab. (ANL), Argonne, IL (United States); Northwestern Univ., Evanston, IL (United States)
  2. Tampere Univ., Tampere (Finland)
  3. Argonne National Lab. (ANL), Argonne, IL (United States)
  4. National Sun Yat-Sen Univ., Kaohsiung (Taiwan)
  5. Tampere Univ., Tampere (Finland); Northeastern Univ., Boston, MA (United States)
  6. Academia Sinica, Taipei (Taiwan)
  7. Northeastern Univ., Boston, MA (United States)
  8. Northwestern Univ., Evanston, IL (United States)
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Complex Materials from First Principles (CCM); Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Org.:
National Science Foundation (NSF); US Department of the Navy, Office of Naval Research (ONR); USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1569733
Alternate Identifier(s):
OSTI ID: 1532573
Grant/Contract Number:  
AC02-06CH11357; AC02-05CH11231; FG02-07ER46352; FG02-09ER16109; SC0012575
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 115; Journal Issue: 2; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; edge states; scanning tunneling microscopy; silicene; silicon nanosheets; surface reconstruction; two-dimensional materials

Citation Formats

Mannix, Andrew J., Saari, Timo, Kiraly, Brian, Fisher, Brandon L., Hsu, Chia-Hsiu, Huang, Zhi-Quan, Chuang, Feng-Chuan, Nieminen, Jouko, Lin, Hsin, Bansil, Arun, Hersam, Mark C., and Guisinger, Nathan P. Edge states in the honeycomb reconstruction of two-dimensional silicon nanosheets. United States: N. p., 2019. Web. doi:10.1063/1.5095414.
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Mannix, Andrew J., Saari, Timo, Kiraly, Brian, Fisher, Brandon L., Hsu, Chia-Hsiu, Huang, Zhi-Quan, Chuang, Feng-Chuan, Nieminen, Jouko, Lin, Hsin, Bansil, Arun, Hersam, Mark C., & Guisinger, Nathan P. Edge states in the honeycomb reconstruction of two-dimensional silicon nanosheets. United States. https://doi.org/10.1063/1.5095414
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Mannix, Andrew J., Saari, Timo, Kiraly, Brian, Fisher, Brandon L., Hsu, Chia-Hsiu, Huang, Zhi-Quan, Chuang, Feng-Chuan, Nieminen, Jouko, Lin, Hsin, Bansil, Arun, Hersam, Mark C., and Guisinger, Nathan P. Tue . "Edge states in the honeycomb reconstruction of two-dimensional silicon nanosheets". United States. https://doi.org/10.1063/1.5095414. https://www.osti.gov/servlets/purl/1569733.
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@article{osti_1569733,
title = {Edge states in the honeycomb reconstruction of two-dimensional silicon nanosheets},
author = {Mannix, Andrew J. and Saari, Timo and Kiraly, Brian and Fisher, Brandon L. and Hsu, Chia-Hsiu and Huang, Zhi-Quan and Chuang, Feng-Chuan and Nieminen, Jouko and Lin, Hsin and Bansil, Arun and Hersam, Mark C. and Guisinger, Nathan P.},
abstractNote = {Electrons confined within a two-dimensional (2D) honeycomb potential can host localized electronic states at their edges. These edge states exhibit distinctive electronic properties relative to the bulk, and may result in spin polarization or topologically protected conduction. However, the synthesis and characterization of well-defined 2D structures which host such edge states remains challenging. Here, we confirm the presence of a two-dimensional electron gas (2DEG) and find evidence for unique edge states in the Ag-induced honeycomb surface reconstruction of silicon nanosheets (SiNS) grown on Ag(111). Atomic-scale scanning tunneling microscopy and computational modeling confirm that the electronic properties of the SiNS surface are determined by the honeycomb surface reconstruction. This surface presents ordered edge terminations with distinct spectroscopic signatures associated with the edge orientation, and calculations suggest that Rashba-type spin orbit coupling may result in spin-polarized conduction along certain edge orientations. Furthermore, this quantification of the electronic structure of edge states in SiNS 2DEGs will inform ongoing efforts to engineer quantum effects in silicon-based nanostructures.},
doi = {10.1063/1.5095414},
journal = {Applied Physics Letters},
number = 2,
volume = 115,
place = {United States},
year = {Tue Jul 09 00:00:00 EDT 2019},
month = {Tue Jul 09 00:00:00 EDT 2019}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1063/1.5095414
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Cited by: 4 works
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Figures / Tables:

Figure 1 Figure 1: (a) Representative STM topography image of SiNS morphology showing monolayer and bilayer islands on a large SiNS terrace, with corresponding color scale. The inset dI/dV map shows electronic LDOS contrast between SiNS and Ag(111), imaged at Vsample= -0.1 V, It = 1.0 nA. (b) Atomic-resolution STM topograph ofmore » the √3 SiNS lattice (Vsample= 0.3 V, It = 1.0 nA). (c) Atomic model for the HCT structure, with edge orientations and periodicities noted. The yellow overlays schematically denote regions of enhanced charge density between the Ag trimers. (d) Atomically resolved STM topography image (Vsample = -1.0 V, It = 800 pA) demonstrating edge associations for hexagonal monolayer and triangular bilayer islands. The inset shows the derivative of topography to emphasize the lattice. (e) Large-scale STM topography image demonstrating edge associations inferred from hexagonal and triangular reference islands (Vsample = -1.0 V, It = 400 nA).« less
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