Structural and Electrical Characterization of 2” Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production
Abstract
Free-standing gallium nitride (GaN) substrates are in high demand for power devices, laser diodes, and high-power light emitting diodes (LEDs). SixPoint Materials Inc. has begun producing 2” GaN substrates through our proprietary Near Equilibrium AmmonoThermal (NEAT) growth technology. In a single 90 day growth, eleven c-plane GaN boules were grown from free-standing hydride vapor phase epitaxy (HVPE) GaN substrates. The boules had an average X-ray rocking curve full width at half maximum (FWHM) of 33 ± 4 in the 002 reflection and 44 ± 6 in the 201 reflection using 0.3 mm divergence slits. The boules had an average radius of curvature of 10.16 ± 3.63 m. The quality of the boules was highly correlated to the quality of the seeds. A PIN diode grown at Georgia Tech on a NEAT GaN substrate had an ideality factor of 2.08, a high breakdown voltage of 1430 V, and Baliga’s Figure of Merit of >9.2 GW/cm2. These initial results demonstrate the suitability of using NEAT GaN substrates for high-quality MOCVD growth and fabrication of high-power vertical GaN switching devices.
- Authors:
- Publication Date:
- Research Org.:
- SixPoint Materials, Inc., Buellton, CA (United States)
- Sponsoring Org.:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- OSTI Identifier:
- 1526335
- Alternate Identifier(s):
- OSTI ID: 1613599
- Grant/Contract Number:
- AR0000445; SC0013791
- Resource Type:
- Published Article
- Journal Name:
- Materials
- Additional Journal Information:
- Journal Name: Materials Journal Volume: 12 Journal Issue: 12; Journal ID: ISSN 1996-1944
- Publisher:
- MDPI
- Country of Publication:
- Switzerland
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Materials Science; GaN; ammonothermal; bulk; substrates; NEAT; power devices
Citation Formats
Key, Daryl, Letts, Edward, Tsou, Chuan-Wei, Ji, Mi-Hee, Bakhtiary-Noodeh, Marzieh, Detchprohm, Theeradetch, Shen, Shyh-Chiang, Dupuis, Russell, and Hashimoto, Tadao. Structural and Electrical Characterization of 2” Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production. Switzerland: N. p., 2019.
Web. doi:10.3390/ma12121925.
Key, Daryl, Letts, Edward, Tsou, Chuan-Wei, Ji, Mi-Hee, Bakhtiary-Noodeh, Marzieh, Detchprohm, Theeradetch, Shen, Shyh-Chiang, Dupuis, Russell, & Hashimoto, Tadao. Structural and Electrical Characterization of 2” Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production. Switzerland. https://doi.org/10.3390/ma12121925
Key, Daryl, Letts, Edward, Tsou, Chuan-Wei, Ji, Mi-Hee, Bakhtiary-Noodeh, Marzieh, Detchprohm, Theeradetch, Shen, Shyh-Chiang, Dupuis, Russell, and Hashimoto, Tadao. Fri .
"Structural and Electrical Characterization of 2” Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production". Switzerland. https://doi.org/10.3390/ma12121925.
@article{osti_1526335,
title = {Structural and Electrical Characterization of 2” Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production},
author = {Key, Daryl and Letts, Edward and Tsou, Chuan-Wei and Ji, Mi-Hee and Bakhtiary-Noodeh, Marzieh and Detchprohm, Theeradetch and Shen, Shyh-Chiang and Dupuis, Russell and Hashimoto, Tadao},
abstractNote = {Free-standing gallium nitride (GaN) substrates are in high demand for power devices, laser diodes, and high-power light emitting diodes (LEDs). SixPoint Materials Inc. has begun producing 2” GaN substrates through our proprietary Near Equilibrium AmmonoThermal (NEAT) growth technology. In a single 90 day growth, eleven c-plane GaN boules were grown from free-standing hydride vapor phase epitaxy (HVPE) GaN substrates. The boules had an average X-ray rocking curve full width at half maximum (FWHM) of 33 ± 4 in the 002 reflection and 44 ± 6 in the 201 reflection using 0.3 mm divergence slits. The boules had an average radius of curvature of 10.16 ± 3.63 m. The quality of the boules was highly correlated to the quality of the seeds. A PIN diode grown at Georgia Tech on a NEAT GaN substrate had an ideality factor of 2.08, a high breakdown voltage of 1430 V, and Baliga’s Figure of Merit of >9.2 GW/cm2. These initial results demonstrate the suitability of using NEAT GaN substrates for high-quality MOCVD growth and fabrication of high-power vertical GaN switching devices.},
doi = {10.3390/ma12121925},
journal = {Materials},
number = 12,
volume = 12,
place = {Switzerland},
year = {Fri Jun 14 00:00:00 EDT 2019},
month = {Fri Jun 14 00:00:00 EDT 2019}
}
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