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Title: Crystal growth and magnetic structure of MnBi 2 Te 4

Journal Article · · Physical Review Materials
ORCiD logo [1]; ORCiD logo [1];  [2];  [3];  [4];  [5];  [3];  [6]; ORCiD logo [1];  [6]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  2. Univ. of Missouri, Columbia, MO (United States)
  3. Rutgers Univ., Piscataway, NJ (United States)
  4. Chinese Academy of Sciences (CAS), Beijing (China)
  5. Chinese Academy of Sciences (CAS), Beijing (China); Songshan Lake Materials Lab., Guangdong (China)
  6. Ames Lab. and Iowa State Univ., Ames, IA (United States)

Millimeter-sized MnBi 2 Te 4 single crystals are grown out of a Bi-Te flux and characterized using magnetic, transport, scanning tunneling microscopy, and spectroscopy measurements. The magnetic structure of MnBi 2 Te 4 below TN is determined by powder and single-crystal neutron diffraction measurements. Below TN = 24 K, Mn2+ moments order ferromagnetically in the ab plane but antiferromagnetically along the crystallographic c axis. The ordered moment is 4.04(13)μB/Mn at 10 K and aligned along the crystallographic c axis in an A-type antiferromagnetic order. Below TN, the electrical resistivity drops upon cooling or when going across the metamagnetic transition in increasing magnetic fields. A critical scattering effect is observed in the vicinity of TN in the temperature dependence of thermal conductivity, indicating strong spin-lattice coupling in this compound. Yet, no anomaly is observed in the temperature dependence of thermopower around TN. Fine tuning of the magnetism and/or electronic band structure is needed for the proposed topological properties of this compound. The growth protocol reported here might be applied to grow high-quality crystals where the electronic band structure and magnetism can be finely tuned by chemical substitutions.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division
Grant/Contract Number:
AC05-00OR22725; AC02-07CH11358
OSTI ID:
1524865
Alternate ID(s):
OSTI ID: 1546219
Journal Information:
Physical Review Materials, Vol. 3, Issue 6; ISSN 2475-9953
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 236 works
Citation information provided by
Web of Science

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Cited By (12)

The Material Efforts for Quantized Hall Devices Based on Topological Insulators journal December 2019
A van der Waals antiferromagnetic topological insulator with weak interlayer magnetic coupling journal January 2020
Seeing is believing: visualization of antiferromagnetic domains journal January 2020
Robust axion insulator and Chern insulator phases in a two-dimensional antiferromagnetic topological insulator journal January 2020
Prediction and observation of an antiferromagnetic topological insulator journal December 2019
Signatures of temperature driven antiferromagnetic transition in the electronic structure of topological insulator MnBi 2 Te 4 journal February 2020
In-plane magnetic-field-induced quantum anomalous Hall plateau transition journal October 2019
Natural van der Waals heterostructural single crystals with both magnetic and topological properties journal November 2019
Surface states and Rashba-type spin polarization in antiferromagnetic $MnBi_{2}Te_{4}$ (0001) text January 2019
Seeing is believing: visualization of antiferromagnetic domains text January 2020
Natural van der Waals heterostructural single crystals with both magnetic and topological properties text January 2019
Antiferromagnetic Topological Insulator MnBi2Te4: Synthesis and Magnetic properties text January 2019