Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes
Abstract
The measurement of the energy distribution of vacuum emitted electrons from InGaN/GaN light-emitting diodes (LEDs) has proven essential in understanding the efficiency loss mechanism known as droop. We report on the measurement and identification of a new low-energy feature in addition to the previously measured three peaks present in the electron emission spectrum from a forward biased LED. Photoemission measurements show that the two low-energy peaks correspond to photoemitted electrons from each of the p-contact metals, palladium and gold. We confirm that the mid and high-energy peaks are due to electrons which have transited the p-type region of the device and have been emitted from the semiconductor surface from the bulk Gamma-valley or a high-energy side valley
- Authors:
-
[1];
[1];
- Univ. of California, Santa Barbara, CA (United States)
- Vilnius Univ., Vilnius (Lithuania)
- Univ. Paris-Saclay, Palaiseau Cedex (France)
- Univ. of California, Santa Barbara, CA (United States); Univ. Paris-Saclay, Palaiseau Cedex (France)
- Publication Date:
- Research Org.:
- Univ. of California, Santa Barbara, CA (United States)
- Sponsoring Org.:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office. Building Technologies Office
- Contributing Org.:
- Ecole Polytechnique; Ecole Polytechnique Paris Vilnius University
- OSTI Identifier:
- 1511166
- Alternate Identifier(s):
- OSTI ID: 1463053; OSTI ID: 1635228; OSTI ID: 1635229
- Grant/Contract Number:
- EE0007096
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 124; Journal Issue: 5; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 74 ATOMIC AND MOLECULAR PHYSICS; work functions; photoexcitations; electronic bandstructure; semiconductors; light emitting diodes; electron spectroscopy; solid states lighting; light emitting diodes, solid state lighting; light emitting diodes, solid states lighting
Citation Formats
Myers, Daniel J., Gelžinytė, Kristina, Ho, Wan Ying, Iveland, Justin, Martinelli, Lucio, Peretti, Jacques, Weisbuch, Claude, and Speck, James S. Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes. United States: N. p., 2018.
Web. doi:10.1063/1.5030208.
Myers, Daniel J., Gelžinytė, Kristina, Ho, Wan Ying, Iveland, Justin, Martinelli, Lucio, Peretti, Jacques, Weisbuch, Claude, & Speck, James S. Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes. United States. https://doi.org/10.1063/1.5030208
Myers, Daniel J., Gelžinytė, Kristina, Ho, Wan Ying, Iveland, Justin, Martinelli, Lucio, Peretti, Jacques, Weisbuch, Claude, and Speck, James S. Mon .
"Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes". United States. https://doi.org/10.1063/1.5030208. https://www.osti.gov/servlets/purl/1511166.
@article{osti_1511166,
title = {Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes},
author = {Myers, Daniel J. and Gelžinytė, Kristina and Ho, Wan Ying and Iveland, Justin and Martinelli, Lucio and Peretti, Jacques and Weisbuch, Claude and Speck, James S.},
abstractNote = {The measurement of the energy distribution of vacuum emitted electrons from InGaN/GaN light-emitting diodes (LEDs) has proven essential in understanding the efficiency loss mechanism known as droop. We report on the measurement and identification of a new low-energy feature in addition to the previously measured three peaks present in the electron emission spectrum from a forward biased LED. Photoemission measurements show that the two low-energy peaks correspond to photoemitted electrons from each of the p-contact metals, palladium and gold. We confirm that the mid and high-energy peaks are due to electrons which have transited the p-type region of the device and have been emitted from the semiconductor surface from the bulk Gamma-valley or a high-energy side valley},
doi = {10.1063/1.5030208},
journal = {Journal of Applied Physics},
number = 5,
volume = 124,
place = {United States},
year = {Mon Aug 06 00:00:00 EDT 2018},
month = {Mon Aug 06 00:00:00 EDT 2018}
}
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Works referencing / citing this record:
Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs
journal, November 2019
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- Journal of Applied Physics, Vol. 126, Issue 18