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Title: Manipulation of Ni Interstitials for Realizing Large Power Factor in TiNiSn‐Based Materials

Authors:
ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [2];  [3];  [2];  [4]; ORCiD logo [4];  [5];  [6]; ORCiD logo [2]
  1. Institute of Fundamental and Frontier SciencesUniversity of Electronic Science and Technology of China Chengdu 610054 China, Department of Physics and Texas Center for SuperconductivityUniversity of Houston Houston TX 77204 USA
  2. Department of Physics and Texas Center for SuperconductivityUniversity of Houston Houston TX 77204 USA
  3. Department of Physics and Texas Center for SuperconductivityUniversity of Houston Houston TX 77204 USA, School of Materials Science and EngineeringShanghai University Shanghai 200444 China
  4. Department of Electrical and Computer EngineeringUniversity of Houston Houston TX 77204 USA
  5. School of Materials Science and EngineeringShanghai University Shanghai 200444 China
  6. Institute of Fundamental and Frontier SciencesUniversity of Electronic Science and Technology of China Chengdu 610054 China
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1510842
Grant/Contract Number:  
DE‐SC0010831
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Electronic Materials
Additional Journal Information:
Journal Name: Advanced Electronic Materials; Journal ID: ISSN 2199-160X
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
United States
Language:
English

Citation Formats

Ren, Wuyang, Zhu, Hangtian, Mao, Jun, You, Li, Song, Shaowei, Tong, Tian, Bao, Jiming, Luo, Jun, Wang, Zhiming, and Ren, Zhifeng. Manipulation of Ni Interstitials for Realizing Large Power Factor in TiNiSn‐Based Materials. United States: N. p., 2019. Web. doi:10.1002/aelm.201900166.
Ren, Wuyang, Zhu, Hangtian, Mao, Jun, You, Li, Song, Shaowei, Tong, Tian, Bao, Jiming, Luo, Jun, Wang, Zhiming, & Ren, Zhifeng. Manipulation of Ni Interstitials for Realizing Large Power Factor in TiNiSn‐Based Materials. United States. doi:10.1002/aelm.201900166.
Ren, Wuyang, Zhu, Hangtian, Mao, Jun, You, Li, Song, Shaowei, Tong, Tian, Bao, Jiming, Luo, Jun, Wang, Zhiming, and Ren, Zhifeng. Mon . "Manipulation of Ni Interstitials for Realizing Large Power Factor in TiNiSn‐Based Materials". United States. doi:10.1002/aelm.201900166.
@article{osti_1510842,
title = {Manipulation of Ni Interstitials for Realizing Large Power Factor in TiNiSn‐Based Materials},
author = {Ren, Wuyang and Zhu, Hangtian and Mao, Jun and You, Li and Song, Shaowei and Tong, Tian and Bao, Jiming and Luo, Jun and Wang, Zhiming and Ren, Zhifeng},
abstractNote = {},
doi = {10.1002/aelm.201900166},
journal = {Advanced Electronic Materials},
number = ,
volume = ,
place = {United States},
year = {2019},
month = {5}
}

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Works referenced in this record:

Evaluation of Half-Heusler Compounds as Thermoelectric Materials Based on the Calculated Electrical Transport Properties
journal, October 2008

  • Yang, Jiong; Li, Huanming; Wu, Ting
  • Advanced Functional Materials, Vol. 18, Issue 19, p. 2880-2888
  • DOI: 10.1002/adfm.200701369