Manipulation of Ni Interstitials for Realizing Large Power Factor in TiNiSn‐Based Materials
Abstract
Abstract Defect engineering has been identified as an effective strategy for improving thermoelectric performance by tailoring electron and phonon transport. TiNiSn is unique due to its naturally formed Ni interstitials, where the interstitial atoms enable strong phonon scattering that results in reduced lattice thermal conductivity, although an adverse effect on mobility is inevitable. Rather than pursuing the conventional strategy of strengthening the interstitial scattering to improve the performance of TiNiSn‐based materials, an attempt is made to minimize the atomic disorder in order to enhance the mobility, which in turn favors a higher power factor. The altered bandgap, and electrical and thermal properties demonstrate that the interstitials can be effectively controlled by intentionally reducing the amount of Ni. Benefiting from the manipulation of the interstitials, significantly enhanced mobility is achieved in the Ni‐deficient composition, resulting in peak power factor of ≈50 µW cm −1 K −2 , which is comparable to the best n‐type half‐Heusler compounds. Additionally, the well‐designed composition employing Ni interstitial manipulation and heavy‐element doping exhibits peak ZT of ≈0.73, higher than that of all other reported TiNiSn‐based materials. The unique role of interstitials in either electron or phonon transport is emphasized, and further encouragement for engineering thermoelectric propertiesmore »
- Authors:
-
[1];
[2];
[2];
[4];
[2]
- Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China Chengdu 610054 China, Department of Physics and Texas Center for Superconductivity University of Houston Houston TX 77204 USA
- Department of Physics and Texas Center for Superconductivity University of Houston Houston TX 77204 USA
- Department of Physics and Texas Center for Superconductivity University of Houston Houston TX 77204 USA, School of Materials Science and Engineering Shanghai University Shanghai 200444 China
- Department of Electrical and Computer Engineering University of Houston Houston TX 77204 USA
- School of Materials Science and Engineering Shanghai University Shanghai 200444 China
- Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China Chengdu 610054 China
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1510842
- Grant/Contract Number:
- DE‐SC0010831
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Advanced Electronic Materials
- Additional Journal Information:
- Journal Name: Advanced Electronic Materials Journal Volume: 5 Journal Issue: 7; Journal ID: ISSN 2199-160X
- Publisher:
- Wiley Blackwell (John Wiley & Sons)
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Ren, Wuyang, Zhu, Hangtian, Mao, Jun, You, Li, Song, Shaowei, Tong, Tian, Bao, Jiming, Luo, Jun, Wang, Zhiming, and Ren, Zhifeng. Manipulation of Ni Interstitials for Realizing Large Power Factor in TiNiSn‐Based Materials. United States: N. p., 2019.
Web. doi:10.1002/aelm.201900166.
Ren, Wuyang, Zhu, Hangtian, Mao, Jun, You, Li, Song, Shaowei, Tong, Tian, Bao, Jiming, Luo, Jun, Wang, Zhiming, & Ren, Zhifeng. Manipulation of Ni Interstitials for Realizing Large Power Factor in TiNiSn‐Based Materials. United States. https://doi.org/10.1002/aelm.201900166
Ren, Wuyang, Zhu, Hangtian, Mao, Jun, You, Li, Song, Shaowei, Tong, Tian, Bao, Jiming, Luo, Jun, Wang, Zhiming, and Ren, Zhifeng. Mon .
"Manipulation of Ni Interstitials for Realizing Large Power Factor in TiNiSn‐Based Materials". United States. https://doi.org/10.1002/aelm.201900166.
@article{osti_1510842,
title = {Manipulation of Ni Interstitials for Realizing Large Power Factor in TiNiSn‐Based Materials},
author = {Ren, Wuyang and Zhu, Hangtian and Mao, Jun and You, Li and Song, Shaowei and Tong, Tian and Bao, Jiming and Luo, Jun and Wang, Zhiming and Ren, Zhifeng},
abstractNote = {Abstract Defect engineering has been identified as an effective strategy for improving thermoelectric performance by tailoring electron and phonon transport. TiNiSn is unique due to its naturally formed Ni interstitials, where the interstitial atoms enable strong phonon scattering that results in reduced lattice thermal conductivity, although an adverse effect on mobility is inevitable. Rather than pursuing the conventional strategy of strengthening the interstitial scattering to improve the performance of TiNiSn‐based materials, an attempt is made to minimize the atomic disorder in order to enhance the mobility, which in turn favors a higher power factor. The altered bandgap, and electrical and thermal properties demonstrate that the interstitials can be effectively controlled by intentionally reducing the amount of Ni. Benefiting from the manipulation of the interstitials, significantly enhanced mobility is achieved in the Ni‐deficient composition, resulting in peak power factor of ≈50 µW cm −1 K −2 , which is comparable to the best n‐type half‐Heusler compounds. Additionally, the well‐designed composition employing Ni interstitial manipulation and heavy‐element doping exhibits peak ZT of ≈0.73, higher than that of all other reported TiNiSn‐based materials. The unique role of interstitials in either electron or phonon transport is emphasized, and further encouragement for engineering thermoelectric properties by manipulating intrinsic disorder, especially in materials with complex structures, is provided.},
doi = {10.1002/aelm.201900166},
journal = {Advanced Electronic Materials},
number = 7,
volume = 5,
place = {United States},
year = {Mon May 06 00:00:00 EDT 2019},
month = {Mon May 06 00:00:00 EDT 2019}
}
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