Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

Huang, Xuanqi; Fang, Runchen; Yang, Chen; Fu, Kai; Fu, Houqiang; Chen, Hong; Yang, Tsung-Han; Zhou, Jingan; Montes, Jossue; Kozicki, Michael; Barnaby, Hugh; Zhang, Baoshun; Zhao, Yuji

doi:10.1088/1361-6528/ab0484

Title: Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

Abstract

We report the demonstration of a steep-slope field-effect transistor with AlGaN/GaN MIS-HEMTs employing SiO₂-based threshold switching devices in series with the source. The SiO₂-based threshold switching devices exhibited steep slope when changing resistance states. The integrated steep-slope transistor showed a low subthreshold swing of sub-5 mV/dec with a transition range of over 10⁵ in the transfer characteristics in both sweep directions at room temperature, as well as the low leakage current (10^-5 μA μm^-1) and a high I _ON/I _OFF ratio (>10⁷). Moreover, with the SiO₂-based threshold switching devices we also observed a positive shift of threshold voltages of the integrated device. Results from more than 50 transfer characteristics measurements also indicate the good repeatability and practicability of such a steep-switching device, where the average steep slopes are below 10 mV/decade. In conclusion, this steep-slope transistor with oxide-based threshold switching devices can be further extended to various transistor platforms like Si and III–V and are of potential interest for the development of power switching and high frequency devices.

Authors:

^[1]; Fang, Runchen ^[2]; Yang, Chen ^[1]; Fu, Kai ^[1];

^[1]; Chen, Hong ^[1]; Yang, Tsung-Han ^[1]; Zhou, Jingan ^[1]; Montes, Jossue ^[1]; Kozicki, Michael ^[1]; Barnaby, Hugh ^[1]; Zhang, Baoshun ^[3]; Zhao, Yuji ^[1]

Arizona State Univ., Tempe, AZ (United States). School of Electrical, Computer & Energy Engineering
Arizona State Univ., Tempe, AZ (United States). School of Electrical, Computer & Energy Engineering; Western Digital Corporation, Milpitas, CA (United States)
Chinese Academy of Sciences (CAS), Suzhou (China). Key Lab. of Nanodevices and Applications, Suzhou Inst. of Nano-Tech and Nano-Bionics

Publication Date:: Wed Mar 13 00:00:00 EDT 2019

Research Org.:: Arizona State Univ., Tempe, AZ (United States)

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:: 1505573

Grant/Contract Number:: AR0000868

Resource Type:: Accepted Manuscript

Journal Name:: Nanotechnology

Additional Journal Information:: Journal Volume: 30; Journal Issue: 21; Journal ID: ISSN 0957-4484

Publisher:: IOP Publishing

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING; 36 MATERIALS SCIENCE; gallium nitride; steep slope; Boltzmann limit; threshold switching; transistor

Citation Formats


                    Huang, Xuanqi, Fang, Runchen, Yang, Chen, Fu, Kai, Fu, Houqiang, Chen, Hong, Yang, Tsung-Han, Zhou, Jingan, Montes, Jossue, Kozicki, Michael, Barnaby, Hugh, Zhang, Baoshun, and Zhao, Yuji. Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device.  United States: N. p., 2019. 
Web.  doi:10.1088/1361-6528/ab0484.

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                    Huang, Xuanqi, Fang, Runchen, Yang, Chen, Fu, Kai, Fu, Houqiang, Chen, Hong, Yang, Tsung-Han, Zhou, Jingan, Montes, Jossue, Kozicki, Michael, Barnaby, Hugh, Zhang, Baoshun, & Zhao, Yuji. Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device.  United States.  https://doi.org/10.1088/1361-6528/ab0484

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                    Huang, Xuanqi, Fang, Runchen, Yang, Chen, Fu, Kai, Fu, Houqiang, Chen, Hong, Yang, Tsung-Han, Zhou, Jingan, Montes, Jossue, Kozicki, Michael, Barnaby, Hugh, Zhang, Baoshun, and Zhao, Yuji. Wed .  
"Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device".  United States.  https://doi.org/10.1088/1361-6528/ab0484.  https://www.osti.gov/servlets/purl/1505573.

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@article{osti_1505573,

  title        = {Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device},

  author       = {Huang, Xuanqi and Fang, Runchen and Yang, Chen and Fu, Kai and Fu, Houqiang and Chen, Hong and Yang, Tsung-Han and Zhou, Jingan and Montes, Jossue and Kozicki, Michael and Barnaby, Hugh and Zhang, Baoshun and Zhao, Yuji},

  abstractNote = {We report the demonstration of a steep-slope field-effect transistor with AlGaN/GaN MIS-HEMTs employing SiO2-based threshold switching devices in series with the source. The SiO2-based threshold switching devices exhibited steep slope when changing resistance states. The integrated steep-slope transistor showed a low subthreshold swing of sub-5 mV/dec with a transition range of over 105 in the transfer characteristics in both sweep directions at room temperature, as well as the low leakage current (10-5 μA μm-1) and a high I ON/I OFF ratio (>107). Moreover, with the SiO2-based threshold switching devices we also observed a positive shift of threshold voltages of the integrated device. Results from more than 50 transfer characteristics measurements also indicate the good repeatability and practicability of such a steep-switching device, where the average steep slopes are below 10 mV/decade. In conclusion, this steep-slope transistor with oxide-based threshold switching devices can be further extended to various transistor platforms like Si and III–V and are of potential interest for the development of power switching and high frequency devices.},

  doi          = {10.1088/1361-6528/ab0484},

  journal      = {Nanotechnology},

  number       = 21,

  volume       = 30,

  place        = {United States},

  year         = {Wed Mar 13 00:00:00 EDT 2019},

  month        = {Wed Mar 13 00:00:00 EDT 2019}

}

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Works referenced in this record:

NbO2 based threshold switch device with high operating temperature (>85°C) for steep-slope MOSFET (∼2mV/dec) with ultra-low voltage operation and improved delay time
conference, December 2017

Park, Jaehyuk; Lee, Dongwook; Yoo, JongMyung
2017 IEEE International Electron Devices Meeting (IEDM)
DOI: 10.1109/IEDM.2017.8268449

Steep Sub-Boltzmann Switching in AlGaN/GaN Phase-FETs With ALD VO ₂
journal, March 2018

Verma, Amit; Song, Bo; Downey, Brian
IEEE Transactions on Electron Devices, Vol. 65, Issue 3
DOI: 10.1109/TED.2018.2795105

Ambipolar field effect in the ternary topological insulator (BixSb1–x)2Te3 by composition tuning
journal, October 2011

Kong, Desheng; Chen, Yulin; Cha, Judy J.
Nature Nanotechnology, Vol. 6, Issue 11
DOI: 10.1038/nnano.2011.172

Investigation of GaN-on-GaN vertical p - n diode with regrown p -GaN by metalorganic chemical vapor deposition
journal, December 2018

Fu, Kai; Fu, Houqiang; Liu, Hanxiao
Applied Physics Letters, Vol. 113, Issue 23
DOI: 10.1063/1.5052479

A Graphene-Based Filament Transistor with Sub-10 mVdec ⁻¹ Subthreshold Swing
journal, March 2018

Tian, He; Wang, Xuefeng; Zhao, Haiming
Advanced Electronic Materials, Vol. 4, Issue 4
DOI: 10.1002/aelm.201700608

A steep-slope transistor based on abrupt electronic phase transition
journal, August 2015

Shukla, Nikhil; Thathachary, Arun V.; Agrawal, Ashish
Nature Communications, Vol. 6, Issue 1
DOI: 10.1038/ncomms8812

Nanometre-scale electronics with III–V compound semiconductors
journal, November 2011

del Alamo, Jesús A.
Nature, Vol. 479, Issue 7373
DOI: 10.1038/nature10677

SiO2 based conductive bridging random access memory
journal, March 2017

Chen, Wenhao; Tappertzhofen, Stefan; Barnaby, Hugh J.
Journal of Electroceramics, Vol. 39, Issue 1-4
DOI: 10.1007/s10832-017-0070-5

Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si ₃ N ₄ as Gate Dielectric and Passivation Layer
journal, February 2016

Zhang, Zhili; Yu, Guohao; Zhang, Xiaodong
IEEE Transactions on Electron Devices, Vol. 63, Issue 2
DOI: 10.1109/TED.2015.2510445

Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
journal, May 2016

Wu, Tian-Li; Franco, Jacopo; Marcon, Denis
IEEE Transactions on Electron Devices, Vol. 63, Issue 5
DOI: 10.1109/TED.2016.2539341

Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array
journal, July 2015

Jeonghwan Song, ; Prakash, Amit
IEEE Electron Device Letters, Vol. 36, Issue 7
DOI: 10.1109/LED.2015.2430332

Threshold Switching and Memory Behaviors of Epitaxially Regrown GaN-on-GaN Vertical p-n Diodes With High Temperature Stability
journal, March 2019

Fu, Kai; Fu, Houqiang; Huang, Xuanqi
IEEE Electron Device Letters, Vol. 40, Issue 3
DOI: 10.1109/LED.2019.2891391

SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations
journal, January 2018

Choi, Shinhyun; Tan, Scott H.; Li, Zefan
Nature Materials, Vol. 17, Issue 4
DOI: 10.1038/s41563-017-0001-5

Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices
journal, February 2008

Salahuddin, Sayeef; Datta, Supriyo
Nano Letters, Vol. 8, Issue 2
DOI: 10.1021/nl071804g

Redox processes in silicon dioxide thin films using copper microelectrodes
journal, November 2011

Tappertzhofen, S.; Menzel, S.; Valov, I.
Applied Physics Letters, Vol. 99, Issue 20
DOI: 10.1063/1.3662013

Silicon Oxide (SiO _x ): A Promising Material for Resistance Switching?
journal, June 2018

Mehonic, Adnan; Shluger, Alexander L.; Gao, David
Advanced Materials, Vol. 30, Issue 43
DOI: 10.1002/adma.201801187

Steep Slope Field-Effect Transistors With Ag/TiO ₂ -Based Threshold Switching Device
journal, July 2016

Song, Jeonghwan; Woo, Jiyong; Lee, Sangheon
IEEE Electron Device Letters, Vol. 37, Issue 7
DOI: 10.1109/LED.2016.2566661

Limits on Silicon Nanoelectronics for Terascale Integration
journal, September 2001

Meindl, J. D.
Science, Vol. 293, Issue 5537
DOI: 10.1126/science.293.5537.2044

Single-layer MoS₂ transistors
journal, January 2011

Radisavljevic, B.; Radenovic, A.; Brivio, J.
Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
DOI: 10.1038/nnano.2010.279

Electrochemical metallization memories—fundamentals, applications, prospects
journal, June 2011

Valov, Ilia; Waser, Rainer; Jameson, John R.
Nanotechnology, Vol. 22, Issue 28
DOI: 10.1088/0957-4484/22/28/289502

A Study of Gamma-Ray Exposure of Cu–SiO$_2$ Programmable Metallization Cells
journal, December 2015

Chen, W.; Barnaby, H. J.; Kozicki, M. N.
IEEE Transactions on Nuclear Science, Vol. 62, Issue 6
DOI: 10.1109/TNS.2015.2478883

Impedance Spectroscopy of Programmable Metallization Cells With a Thin SiO ₂ Switching Layer
journal, May 2016

Chen, W.; Barnaby, H. J.; Kozicki, M. N.
IEEE Electron Device Letters, Vol. 37, Issue 5
DOI: 10.1109/LED.2016.2542239

AlGaN/GaN MIS-HEMTs of Very-Low ${V}_{\sf {{th}}}$ Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator
journal, February 2017

Zhang, Zhili; Li, Weiyi; Fu, Kai
IEEE Electron Device Letters, Vol. 38, Issue 2
DOI: 10.1109/LED.2016.2636136

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Title: Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

Abstract

Citation Formats

NbO2 based threshold switch device with high operating temperature (>85°C) for steep-slope MOSFET (∼2mV/dec) with ultra-low voltage operation and improved delay time conference, December 2017

Steep Sub-Boltzmann Switching in AlGaN/GaN Phase-FETs With ALD VO 2 journal, March 2018

Ambipolar field effect in the ternary topological insulator (BixSb1–x)2Te3 by composition tuning journal, October 2011

Investigation of GaN-on-GaN vertical p - n diode with regrown p -GaN by metalorganic chemical vapor deposition journal, December 2018

A Graphene-Based Filament Transistor with Sub-10 mVdec −1 Subthreshold Swing journal, March 2018

A steep-slope transistor based on abrupt electronic phase transition journal, August 2015

Nanometre-scale electronics with III–V compound semiconductors journal, November 2011

SiO2 based conductive bridging random access memory journal, March 2017

Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si 3 N 4 as Gate Dielectric and Passivation Layer journal, February 2016

Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs journal, May 2016

Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array journal, July 2015

Threshold Switching and Memory Behaviors of Epitaxially Regrown GaN-on-GaN Vertical p-n Diodes With High Temperature Stability journal, March 2019

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Silicon Oxide (SiO x ): A Promising Material for Resistance Switching? journal, June 2018

Steep Slope Field-Effect Transistors With Ag/TiO 2 -Based Threshold Switching Device journal, July 2016

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NbO2 based threshold switch device with high operating temperature (>85°C) for steep-slope MOSFET (∼2mV/dec) with ultra-low voltage operation and improved delay time
conference, December 2017

Steep Sub-Boltzmann Switching in AlGaN/GaN Phase-FETs With ALD VO ₂
journal, March 2018

Ambipolar field effect in the ternary topological insulator (BixSb1–x)2Te3 by composition tuning
journal, October 2011

Investigation of GaN-on-GaN vertical p - n diode with regrown p -GaN by metalorganic chemical vapor deposition
journal, December 2018

A Graphene-Based Filament Transistor with Sub-10 mVdec ⁻¹ Subthreshold Swing
journal, March 2018

A steep-slope transistor based on abrupt electronic phase transition
journal, August 2015

Nanometre-scale electronics with III–V compound semiconductors
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SiO2 based conductive bridging random access memory
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Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si ₃ N ₄ as Gate Dielectric and Passivation Layer
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Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs
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Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array
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Threshold Switching and Memory Behaviors of Epitaxially Regrown GaN-on-GaN Vertical p-n Diodes With High Temperature Stability
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journal, September 2001

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