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Title: Phase transition and energy storage behavior of antiferroelectric PLZT thin films epitaxially deposited on SRO buffered STO single crystal substrates [Phase transition and energy storage behavior of antiferroelectric PLZT thin films epitaxially deposited on SRO buffered STO single crystal substrates]

Abstract

Thin films of 300-nm-thick (Pb0.98, La0.02)(Zr0.95, Ti0.05)O3 (PLZT) were epitaxially deposited on (100), (110), and (111) SrTiO3 single crystal substrates by pulsed laser deposition. X-ray diffraction line and reciprocal space mapping (RSM) scans were used to determine the crystal structure. Tetragonal ((001) PLZT) and monoclinic MA ((O 1 1 ) and (111) PLZT) structures were found, which influenced the stored energy density. Electric field induced antiferroelectric to ferroelectric (AFE—>FE) phase transitions were found to have a large reversible energy density of up to 30J/cm3. With increasing temperature, an AFE to relaxor ferroelectric (AFE—>RFE) transition was found. The RFE phase exhibited lower energy loss, and an improved energy storage efficiency. Here, the results are discussed from the perspective of crystal structure, dielectric phase transitions, and energy storage characteristics.

Authors:
ORCiD logo [1]; ORCiD logo [1];  [1];  [2];  [1];  [1]
  1. Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1502467
Alternate Identifier(s):
OSTI ID: 1496648
Report Number(s):
SAND-2018-3608J
Journal ID: ISSN 0002-7820; 666308
Grant/Contract Number:  
AC04-94AL85000; DE‐FG02‐06ER46290
Resource Type:
Accepted Manuscript
Journal Name:
Journal of the American Ceramic Society
Additional Journal Information:
Journal Volume: 102; Journal Issue: 9; Journal ID: ISSN 0002-7820
Publisher:
American Ceramic Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 25 ENERGY STORAGE; energy harvesting; phase transition; relaxors; thin films

Citation Formats

Gao, Min, Tang, Xiao, Leung, Chung Ming, Dai, Steve, Li, Jiefang, and Viehland, Dwight D. Phase transition and energy storage behavior of antiferroelectric PLZT thin films epitaxially deposited on SRO buffered STO single crystal substrates [Phase transition and energy storage behavior of antiferroelectric PLZT thin films epitaxially deposited on SRO buffered STO single crystal substrates]. United States: N. p., 2019. Web. doi:10.1111/jace.16380.
Gao, Min, Tang, Xiao, Leung, Chung Ming, Dai, Steve, Li, Jiefang, & Viehland, Dwight D. Phase transition and energy storage behavior of antiferroelectric PLZT thin films epitaxially deposited on SRO buffered STO single crystal substrates [Phase transition and energy storage behavior of antiferroelectric PLZT thin films epitaxially deposited on SRO buffered STO single crystal substrates]. United States. doi:10.1111/jace.16380.
Gao, Min, Tang, Xiao, Leung, Chung Ming, Dai, Steve, Li, Jiefang, and Viehland, Dwight D. Wed . "Phase transition and energy storage behavior of antiferroelectric PLZT thin films epitaxially deposited on SRO buffered STO single crystal substrates [Phase transition and energy storage behavior of antiferroelectric PLZT thin films epitaxially deposited on SRO buffered STO single crystal substrates]". United States. doi:10.1111/jace.16380. https://www.osti.gov/servlets/purl/1502467.
@article{osti_1502467,
title = {Phase transition and energy storage behavior of antiferroelectric PLZT thin films epitaxially deposited on SRO buffered STO single crystal substrates [Phase transition and energy storage behavior of antiferroelectric PLZT thin films epitaxially deposited on SRO buffered STO single crystal substrates]},
author = {Gao, Min and Tang, Xiao and Leung, Chung Ming and Dai, Steve and Li, Jiefang and Viehland, Dwight D.},
abstractNote = {Thin films of 300-nm-thick (Pb0.98, La0.02)(Zr0.95, Ti0.05)O3 (PLZT) were epitaxially deposited on (100), (110), and (111) SrTiO3 single crystal substrates by pulsed laser deposition. X-ray diffraction line and reciprocal space mapping (RSM) scans were used to determine the crystal structure. Tetragonal ((001) PLZT) and monoclinic MA ((O 1 1 ) and (111) PLZT) structures were found, which influenced the stored energy density. Electric field induced antiferroelectric to ferroelectric (AFE—>FE) phase transitions were found to have a large reversible energy density of up to 30J/cm3. With increasing temperature, an AFE to relaxor ferroelectric (AFE—>RFE) transition was found. The RFE phase exhibited lower energy loss, and an improved energy storage efficiency. Here, the results are discussed from the perspective of crystal structure, dielectric phase transitions, and energy storage characteristics.},
doi = {10.1111/jace.16380},
journal = {Journal of the American Ceramic Society},
number = 9,
volume = 102,
place = {United States},
year = {2019},
month = {2}
}

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