External cavity type-I quantum well cascade diode lasers with a tuning range of 440 nm near 3 μm
Abstract
A three-stage cascade GaSb-based diode laser heterostructure with an enhanced optical gain spectral bandwidth was designed and fabricated. The gain broadening was achieved by varying the thickness of the type-I quantum wells in different stages of the cascade active region from 10 to 14 nm. The structures were processed into bent ridge gain chips with virtually eliminated feedback from the anti-reflection-coated angled facet. In conclusion, the external cavity devices based on a novel gain chip design demonstrated a record wide tuning range from 2.79 to 3.23 μm in a Littrow cavity configuration at 20°C.
- Authors:
-
[2];
[1];
- State Univ. of New York at Stony Brook, Stony Brook, NY (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Publication Date:
- Research Org.:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1487248
- Alternate Identifier(s):
- OSTI ID: 1469411
- Report Number(s):
- BNL-209749-2018-JAAM
Journal ID: ISSN 0146-9592; OPLEDP
- Grant/Contract Number:
- SC0012704
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Optics Letters
- Additional Journal Information:
- Journal Volume: 43; Journal Issue: 18; Journal ID: ISSN 0146-9592
- Publisher:
- Optical Society of America (OSA)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; optics; lasers
Citation Formats
Wang, Meng, Hosoda, Takashi, Jiang, Jiang, Shterengas, Leon, Kipshidze, Gela, Stein, Aaron, Feng, Tao, and Belenky, Gregory. External cavity type-I quantum well cascade diode lasers with a tuning range of 440 nm near 3 μm. United States: N. p., 2018.
Web. doi:10.1364/OL.43.004473.
Wang, Meng, Hosoda, Takashi, Jiang, Jiang, Shterengas, Leon, Kipshidze, Gela, Stein, Aaron, Feng, Tao, & Belenky, Gregory. External cavity type-I quantum well cascade diode lasers with a tuning range of 440 nm near 3 μm. United States. https://doi.org/10.1364/OL.43.004473
Wang, Meng, Hosoda, Takashi, Jiang, Jiang, Shterengas, Leon, Kipshidze, Gela, Stein, Aaron, Feng, Tao, and Belenky, Gregory. Thu .
"External cavity type-I quantum well cascade diode lasers with a tuning range of 440 nm near 3 μm". United States. https://doi.org/10.1364/OL.43.004473. https://www.osti.gov/servlets/purl/1487248.
@article{osti_1487248,
title = {External cavity type-I quantum well cascade diode lasers with a tuning range of 440 nm near 3 μm},
author = {Wang, Meng and Hosoda, Takashi and Jiang, Jiang and Shterengas, Leon and Kipshidze, Gela and Stein, Aaron and Feng, Tao and Belenky, Gregory},
abstractNote = {A three-stage cascade GaSb-based diode laser heterostructure with an enhanced optical gain spectral bandwidth was designed and fabricated. The gain broadening was achieved by varying the thickness of the type-I quantum wells in different stages of the cascade active region from 10 to 14 nm. The structures were processed into bent ridge gain chips with virtually eliminated feedback from the anti-reflection-coated angled facet. In conclusion, the external cavity devices based on a novel gain chip design demonstrated a record wide tuning range from 2.79 to 3.23 μm in a Littrow cavity configuration at 20°C.},
doi = {10.1364/OL.43.004473},
journal = {Optics Letters},
number = 18,
volume = 43,
place = {United States},
year = {Thu Sep 13 00:00:00 EDT 2018},
month = {Thu Sep 13 00:00:00 EDT 2018}
}
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Works referencing / citing this record:
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journal, November 2019
- Lancaster, D. G.; Otten, D. E.; Cernescu, A.
- APL Photonics, Vol. 4, Issue 11