External cavity type-I quantum well cascade diode lasers with a tuning range of 440 nm near 3 μm

Journal Article · 13 September 2018 · Optics Letters

DOI: https://doi.org/10.1364/OL.43.004473 · OSTI ID:1487248

Wang, Meng ^[1]; Hosoda, Takashi ^[1]; Jiang, Jiang ^[1]; Shterengas, Leon ^[1]; Kipshidze, Gela ^[1]; Stein, Aaron  ^[2]; Feng, Tao  ^[1]; Belenky, Gregory ^[1]

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1. State Univ. of New York at Stony Brook, Stony Brook, NY (United States)
2. Brookhaven National Lab. (BNL), Upton, NY (United States)

A three-stage cascade GaSb-based diode laser heterostructure with an enhanced optical gain spectral bandwidth was designed and fabricated. The gain broadening was achieved by varying the thickness of the type-I quantum wells in different stages of the cascade active region from 10 to 14 nm. The structures were processed into bent ridge gain chips with virtually eliminated feedback from the anti-reflection-coated angled facet. In conclusion, the external cavity devices based on a novel gain chip design demonstrated a record wide tuning range from 2.79 to 3.23 μm in a Littrow cavity configuration at 20°C.

• Research Organization: Brookhaven National Laboratory (BNL), Upton, NY (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
• Grant/Contract Number: SC0012704
• OSTI ID: 1487248
• Report Number(s): BNL--209749-2018-JAAM
• Journal Information: Optics Letters, Journal Name: Optics Letters Journal Issue: 18 Vol. 43; ISSN 0146-9592; ISSN OPLEDP
• Publisher: Optical Society of America (OSA)Copyright Statement
• Country of Publication: United States
• Language: English