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Title: External cavity type-I quantum well cascade diode lasers with a tuning range of 440 nm near 3 μm

Abstract

A three-stage cascade GaSb-based diode laser heterostructure with an enhanced optical gain spectral bandwidth was designed and fabricated. The gain broadening was achieved by varying the thickness of the type-I quantum wells in different stages of the cascade active region from 10 to 14 nm. The structures were processed into bent ridge gain chips with virtually eliminated feedback from the anti-reflection-coated angled facet. In conclusion, the external cavity devices based on a novel gain chip design demonstrated a record wide tuning range from 2.79 to 3.23 μm in a Littrow cavity configuration at 20°C.

Authors:
 [1];  [1];  [1];  [1];  [1]; ORCiD logo [2]; ORCiD logo [1];  [1]
  1. State Univ. of New York at Stony Brook, Stony Brook, NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1487248
Alternate Identifier(s):
OSTI ID: 1469411
Report Number(s):
BNL-209749-2018-JAAM
Journal ID: ISSN 0146-9592; OPLEDP
Grant/Contract Number:  
SC0012704
Resource Type:
Accepted Manuscript
Journal Name:
Optics Letters
Additional Journal Information:
Journal Volume: 43; Journal Issue: 18; Journal ID: ISSN 0146-9592
Publisher:
Optical Society of America (OSA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; optics; lasers

Citation Formats

Wang, Meng, Hosoda, Takashi, Jiang, Jiang, Shterengas, Leon, Kipshidze, Gela, Stein, Aaron, Feng, Tao, and Belenky, Gregory. External cavity type-I quantum well cascade diode lasers with a tuning range of 440 nm near 3 μm. United States: N. p., 2018. Web. doi:10.1364/OL.43.004473.
Wang, Meng, Hosoda, Takashi, Jiang, Jiang, Shterengas, Leon, Kipshidze, Gela, Stein, Aaron, Feng, Tao, & Belenky, Gregory. External cavity type-I quantum well cascade diode lasers with a tuning range of 440 nm near 3 μm. United States. doi:https://doi.org/10.1364/OL.43.004473
Wang, Meng, Hosoda, Takashi, Jiang, Jiang, Shterengas, Leon, Kipshidze, Gela, Stein, Aaron, Feng, Tao, and Belenky, Gregory. Thu . "External cavity type-I quantum well cascade diode lasers with a tuning range of 440 nm near 3 μm". United States. doi:https://doi.org/10.1364/OL.43.004473. https://www.osti.gov/servlets/purl/1487248.
@article{osti_1487248,
title = {External cavity type-I quantum well cascade diode lasers with a tuning range of 440 nm near 3 μm},
author = {Wang, Meng and Hosoda, Takashi and Jiang, Jiang and Shterengas, Leon and Kipshidze, Gela and Stein, Aaron and Feng, Tao and Belenky, Gregory},
abstractNote = {A three-stage cascade GaSb-based diode laser heterostructure with an enhanced optical gain spectral bandwidth was designed and fabricated. The gain broadening was achieved by varying the thickness of the type-I quantum wells in different stages of the cascade active region from 10 to 14 nm. The structures were processed into bent ridge gain chips with virtually eliminated feedback from the anti-reflection-coated angled facet. In conclusion, the external cavity devices based on a novel gain chip design demonstrated a record wide tuning range from 2.79 to 3.23 μm in a Littrow cavity configuration at 20°C.},
doi = {10.1364/OL.43.004473},
journal = {Optics Letters},
number = 18,
volume = 43,
place = {United States},
year = {2018},
month = {9}
}

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Works referenced in this record:

Performance characteristics of a continuous-wave compact widely tunable external cavity interband cascade lasers
journal, January 2010

  • Caffey, David; Day, Timothy; Kim, Chul Soo
  • Optics Express, Vol. 18, Issue 15
  • DOI: 10.1364/OE.18.015691

Widely Tunable GaSb-Based External Cavity Diode Laser Emitting Around 2.3$mu$m
journal, September 2006

  • Geerlings, E.; Rattunde, M.; Schmitz, J.
  • IEEE Photonics Technology Letters, Vol. 18, Issue 18
  • DOI: 10.1109/LPT.2006.881658

Type-I QW cascade diode lasers for spectral region above 3 μm
conference, March 2016

  • Shterengas, L.; Hosoda, T.; Wang, M.
  • SPIE OPTO, SPIE Proceedings
  • DOI: 10.1117/12.2208933

Gain spectra in GaAs double−heterostructure injection lasers
journal, March 1975

  • Hakki, Basil W.; Paoli, Thomas L.
  • Journal of Applied Physics, Vol. 46, Issue 3
  • DOI: 10.1063/1.321696

Cascade Pumping of 1.9–3.3 μm Type-I Quantum Well GaSb-Based Diode Lasers
journal, November 2017

  • Shterengas, Leon; Kipshidze, Gela; Hosoda, Takashi
  • IEEE Journal of Selected Topics in Quantum Electronics, Vol. 23, Issue 6
  • DOI: 10.1109/JSTQE.2017.2687763

Type-I quantum well cascade diode lasers emitting near 3  μ m
journal, September 2013

  • Shterengas, Leon; Liang, Rui; Kipshidze, Gela
  • Applied Physics Letters, Vol. 103, Issue 12
  • DOI: 10.1063/1.4821992

Reflection loss of laser mode from tilted end mirror
journal, January 1989

  • Marcuse, D.
  • Journal of Lightwave Technology, Vol. 7, Issue 2
  • DOI: 10.1109/50.17776

InAs/AlSb widely tunable external cavity quantum cascade laser around 3.2 μm
journal, January 2013

  • Kruczek, T.; Fedorova, K. A.; Sokolovskii, G. S.
  • Applied Physics Letters, Vol. 102, Issue 1
  • DOI: 10.1063/1.4774088

External cavity cascade diode lasers tunable from 3.05 to 3.25  μm
journal, September 2017


    Works referencing / citing this record:

    An ultra-stable 2.9 μm guided-wave chip laser and application to nano-spectroscopy
    journal, November 2019

    • Lancaster, D. G.; Otten, D. E.; Cernescu, A.
    • APL Photonics, Vol. 4, Issue 11
    • DOI: 10.1063/1.5113624