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Title: External cavity type-I quantum well cascade diode lasers with a tuning range of 440 nm near 3 μm

Abstract

A three-stage cascade GaSb-based diode laser heterostructure with an enhanced optical gain spectral bandwidth was designed and fabricated. The gain broadening was achieved by varying the thickness of the type-I quantum wells in different stages of the cascade active region from 10 to 14 nm. The structures were processed into bent ridge gain chips with virtually eliminated feedback from the anti-reflection-coated angled facet. In conclusion, the external cavity devices based on a novel gain chip design demonstrated a record wide tuning range from 2.79 to 3.23 μm in a Littrow cavity configuration at 20°C.

Authors:
 [1];  [1];  [1];  [1];  [1]; ORCiD logo [2]; ORCiD logo [1];  [1]
  1. State Univ. of New York at Stony Brook, Stony Brook, NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1487248
Alternate Identifier(s):
OSTI ID: 1469411
Report Number(s):
BNL-209749-2018-JAAM
Journal ID: ISSN 0146-9592; OPLEDP
Grant/Contract Number:  
SC0012704
Resource Type:
Accepted Manuscript
Journal Name:
Optics Letters
Additional Journal Information:
Journal Volume: 43; Journal Issue: 18; Journal ID: ISSN 0146-9592
Publisher:
Optical Society of America (OSA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; optics; lasers

Citation Formats

Wang, Meng, Hosoda, Takashi, Jiang, Jiang, Shterengas, Leon, Kipshidze, Gela, Stein, Aaron, Feng, Tao, and Belenky, Gregory. External cavity type-I quantum well cascade diode lasers with a tuning range of 440 nm near 3 μm. United States: N. p., 2018. Web. doi:10.1364/OL.43.004473.
Wang, Meng, Hosoda, Takashi, Jiang, Jiang, Shterengas, Leon, Kipshidze, Gela, Stein, Aaron, Feng, Tao, & Belenky, Gregory. External cavity type-I quantum well cascade diode lasers with a tuning range of 440 nm near 3 μm. United States. doi:10.1364/OL.43.004473.
Wang, Meng, Hosoda, Takashi, Jiang, Jiang, Shterengas, Leon, Kipshidze, Gela, Stein, Aaron, Feng, Tao, and Belenky, Gregory. Thu . "External cavity type-I quantum well cascade diode lasers with a tuning range of 440 nm near 3 μm". United States. doi:10.1364/OL.43.004473. https://www.osti.gov/servlets/purl/1487248.
@article{osti_1487248,
title = {External cavity type-I quantum well cascade diode lasers with a tuning range of 440 nm near 3 μm},
author = {Wang, Meng and Hosoda, Takashi and Jiang, Jiang and Shterengas, Leon and Kipshidze, Gela and Stein, Aaron and Feng, Tao and Belenky, Gregory},
abstractNote = {A three-stage cascade GaSb-based diode laser heterostructure with an enhanced optical gain spectral bandwidth was designed and fabricated. The gain broadening was achieved by varying the thickness of the type-I quantum wells in different stages of the cascade active region from 10 to 14 nm. The structures were processed into bent ridge gain chips with virtually eliminated feedback from the anti-reflection-coated angled facet. In conclusion, the external cavity devices based on a novel gain chip design demonstrated a record wide tuning range from 2.79 to 3.23 μm in a Littrow cavity configuration at 20°C.},
doi = {10.1364/OL.43.004473},
journal = {Optics Letters},
number = 18,
volume = 43,
place = {United States},
year = {2018},
month = {9}
}

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Cited by: 1 work
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