Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge)

Simov, K. R.; Glans, P. -A.; Jenkins, C. A.; Liberati, M.; Reinke, P.

doi:10.1063/1.4996299

Title: Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge)

Abstract

Mn doping of group-IV semiconductors (Si/Ge) is achieved by embedding nanostructured Mn-layers in group-IV matrix. The Mn-nanostructures are monoatomic Mn-wires or Mn-clusters and capped with an amorphous Si or Ge layer. The precise fabrication of δ-doped Mn-layers is combined with element-specific detection of the magnetic signature with x-ray magnetic circular dichroism. The largest moment (2.5 μ_B/Mn) is measured for Mn-wires with ionic bonding character and a-Ge overlayer cap; a-Si capping reduces the moment due to variations of bonding in agreement with theoretical predictions. The moments in δ-doped layers dominated by clusters is quenched with an antiferromagnetic component from Mn–Mn bonding.

Authors:

Simov, K. R. ^[1]; Glans, P. -A. ^[2]; Jenkins, C. A. ^[2]; Liberati, M. ^[2];

^[1]

Univ. of Virginia, Charlottesville, VA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Publication Date:: Thu Jan 18 00:00:00 EST 2018

Research Org.:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1485072

Alternate Identifier(s):: OSTI ID: 1417420

Grant/Contract Number:: AC02-05CH11231

Resource Type:: Accepted Manuscript

Journal Name:: APL Materials

Additional Journal Information:: Journal Volume: 6; Journal Issue: 1; Journal ID: ISSN 2166-532X

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Simov, K. R., Glans, P. -A., Jenkins, C. A., Liberati, M., and Reinke, P. Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge).  United States: N. p., 2018. 
Web.  doi:10.1063/1.4996299.

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                    Simov, K. R., Glans, P. -A., Jenkins, C. A., Liberati, M., & Reinke, P. Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge).  United States.  https://doi.org/10.1063/1.4996299

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                    Simov, K. R., Glans, P. -A., Jenkins, C. A., Liberati, M., and Reinke, P. Thu .  
"Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge)".  United States.  https://doi.org/10.1063/1.4996299.  https://www.osti.gov/servlets/purl/1485072.

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@article{osti_1485072,

  title        = {Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge)},

  author       = {Simov, K. R. and Glans, P. -A. and Jenkins, C. A. and Liberati, M. and Reinke, P.},

  abstractNote = {Mn doping of group-IV semiconductors (Si/Ge) is achieved by embedding nanostructured Mn-layers in group-IV matrix. The Mn-nanostructures are monoatomic Mn-wires or Mn-clusters and capped with an amorphous Si or Ge layer. The precise fabrication of δ-doped Mn-layers is combined with element-specific detection of the magnetic signature with x-ray magnetic circular dichroism. The largest moment (2.5 μB/Mn) is measured for Mn-wires with ionic bonding character and a-Ge overlayer cap; a-Si capping reduces the moment due to variations of bonding in agreement with theoretical predictions. The moments in δ-doped layers dominated by clusters is quenched with an antiferromagnetic component from Mn–Mn bonding.},

  doi          = {10.1063/1.4996299},

  journal      = {APL Materials},

  number       = 1,

  volume       = 6,

  place        = {United States},

  year         = {Thu Jan 18 00:00:00 EST 2018},

  month        = {Thu Jan 18 00:00:00 EST 2018}

}

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Figures / Tables:

FIG. 1: STM images of the Mn-nanostructures, and (a) shows a typical image of the Mn-wires for a coverage of 0.25 ML Mn. This sample was not used in the XMCD experiments and the low coverage allows better visibility of the wires and Si-surface. All other images show samples whichmore »

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Similar Records

Title: Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge)

Abstract

Citation Formats

Figures / Tables:

Surface effects in Mn L3,2 x-ray absorption spectra from (Ga,Mn)As journal, May 2004

Manganese Nanostructures on Si(100)(2 × 1) Surfaces: Temperature-Driven Transition from Wires to Silicides journal, October 2010

Oscillatory Magnetic Anisotropy in One-Dimensional Atomic Wires journal, August 2004

Surface characterization of Mn x Ge 1 − x and Cr y Mn x Ge 1 − x − y dilute magnetic semiconductors journal, March 2007

Guided Self-Assembly of Mn Wires on the Si(100)(2 × 1) Surface journal, January 2012

How to fabricate a defect free Si(001) surface journal, July 2000

Comparison of the magnetic properties of GeMn thin films through Mn L-edge x-ray absorption journal, October 2009

Spinodal nanodecomposition in semiconductors doped with transition metals journal, November 2015

Achieving high Curie temperature in (Ga,Mn)As journal, September 2008

Bonding geometry of Mn-wires on the Si(100)(2×1) surface journal, July 2011

X-ray absorption study of the electronic structure of Mn-doped amorphous Si journal, April 2008

Atomic Structure of Mn Wires on Si(001) Resolved by Scanning Tunneling Microscopy journal, October 2012

Atomic-scale nanowires: physical and electronic structure journal, June 2004

Direct observation of the lattice sites of implanted manganese in silicon journal, March 2016

Confinement and integration of magnetic impurities in silicon journal, February 2013

Epitaxy of Mn on Si(001): Adsorption, surface diffusion, and magnetic properties studied by density-functional theory journal, November 2006

High-Curie-temperature ferromagnetism in self-organized Ge1−xMnx nanocolumns journal, July 2006

Spatial Chemical Inhomogeneity and Local Electronic Structure of Mn-Doped Ge Ferromagnetic Semiconductors journal, April 2005

Challenges for semiconductor spintronics journal, March 2007

Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge journal, October 2010

Making Nonmagnetic Semiconductors Ferromagnetic journal, August 1998

Exploring the microscopic origin of magnetic anisotropies with X-ray magnetic circular dichroism (XMCD) spectroscopy journal, October 1999

X-ray magnetic circular dichroism in (Ge,Mn) compounds: Experiments and modeling journal, March 2014

The 2p absorption spectra of 3d transition metal compounds in tetrahedral and octahedral symmetry journal, April 1992

A Group-IV Ferromagnetic Semiconductor: MnxGe1-x journal, January 2002

Exchange bias in a ferromagnetic semiconductor induced by a ferromagnetic metal: Fe/(Ga,Mn)As bilayer films studied by XMCD measurements and SQUID magnetometry journal, March 2010

Density-Functional Theory Study of Half-Metallic Heterostructures: Interstitial Mn in Si journal, March 2007

Creation of an Antiferromagnetic Exchange Spring journal, June 2004

Interface structure and magnetism of magnetic tunnel junctions with a Co 2 Mn Si electrode journal, July 2004

Structure of Self-Assembled Mn Atom Chains on Si(001) journal, December 2015

Ge 1−x Mn x heteroepitaxial quantum dots: Growth, morphology, and magnetism journal, February 2013

Spintronics: fundamentals and applications text, January 2004

Achieving High Curie Temperature in (Ga,Mn)As text, January 2008

Atomic structure of Mn wires on Si(001) resolved by scanning tunneling microscopy text, January 2012

X-ray magnetic circular dichroism in (Ge,Mn) compounds: experiments and modeling text, January 2012

Surface effects in Mn L3,2 x-ray absorption spectra from (Ga,Mn)As
journal, May 2004

Manganese Nanostructures on Si(100)(2 × 1) Surfaces: Temperature-Driven Transition from Wires to Silicides
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Oscillatory Magnetic Anisotropy in One-Dimensional Atomic Wires
journal, August 2004

Surface characterization of ${Mn}_{x} {Ge}_{1 - x}$ and ${Cr}_{y} {Mn}_{x} {Ge}_{1 - x - y}$ dilute magnetic semiconductors
journal, March 2007

Guided Self-Assembly of Mn Wires on the Si(100)(2 × 1) Surface
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Comparison of the magnetic properties of GeMn thin films through Mn L-edge x-ray absorption
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Spinodal nanodecomposition in semiconductors doped with transition metals
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Achieving high Curie temperature in (Ga,Mn)As
journal, September 2008

Bonding geometry of Mn-wires on the Si(100)(2×1) surface
journal, July 2011

X-ray absorption study of the electronic structure of Mn-doped amorphous Si
journal, April 2008

Atomic Structure of Mn Wires on Si(001) Resolved by Scanning Tunneling Microscopy
journal, October 2012

Atomic-scale nanowires: physical and electronic structure
journal, June 2004

Direct observation of the lattice sites of implanted manganese in silicon
journal, March 2016

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journal, February 2013

Epitaxy of Mn on Si(001): Adsorption, surface diffusion, and magnetic properties studied by density-functional theory
journal, November 2006

High-Curie-temperature ferromagnetism in self-organized Ge1−xMnx nanocolumns
journal, July 2006

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Challenges for semiconductor spintronics
journal, March 2007

Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge
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Making Nonmagnetic Semiconductors Ferromagnetic
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Exploring the microscopic origin of magnetic anisotropies with X-ray magnetic circular dichroism (XMCD) spectroscopy
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X-ray magnetic circular dichroism in (Ge,Mn) compounds: Experiments and modeling
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The 2p absorption spectra of 3d transition metal compounds in tetrahedral and octahedral symmetry
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A Group-IV Ferromagnetic Semiconductor: MnxGe1-x
journal, January 2002

Exchange bias in a ferromagnetic semiconductor induced by a ferromagnetic metal: Fe/(Ga,Mn)As bilayer films studied by XMCD measurements and SQUID magnetometry
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Density-Functional Theory Study of Half-Metallic Heterostructures: Interstitial Mn in Si
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Creation of an Antiferromagnetic Exchange Spring
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