Isostructural metal-insulator transition in VO 2
Abstract
The metal-insulator transition in correlated materials is usually coupled to a symmetry-lowering structural phase transition. This coupling not only complicates the understanding of the basic mechanism of this phenomenon but also limits the speed and endurance of prospective electronic devices. We demonstrate an isostructural, purely electronically driven metal-insulator transition in epitaxial heterostructures of an archetypal correlated material, vanadium dioxide. A combination of thin-film synthesis, structural and electrical characterizations, and theoretical modeling reveals that an interface interaction suppresses the electronic correlations without changing the crystal structure in this otherwise correlated insulator. This interaction stabilizes a nonequilibrium metallic phase and leads to an isostructural metal-insulator transition. This discovery will provide insights into phase transitions of correlated materials and may aid the design of device functionalities.
- Authors:
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[1];
[2];
[3];
[4];
[3];
[4];
[1];
[8];
[1];
[9];
[3];
[2]
more »
- Department of Materials Science and Engineering, University of Wisconsin, Madison, WI 53706, USA.
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea.
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802, USA.
- Department of Materials Modeling and Characterization, Korea Institute of Materials Science, Changwon 642-831, Korea.
- Department of Physics, University of Wisconsin, Madison, WI 53706, USA.
- Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439, USA., School of Physical Sciences, Dublin City University, Dublin 9, Ireland.
- Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439, USA.
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE 68588, USA.
- Department of Physics, Boise State University, Boise, ID 83725, USA.
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; US Department of the Navy, Office of Naval Research (ONR); National Science Foundation (NSF)
- OSTI Identifier:
- 1483924
- Alternate Identifier(s):
- OSTI ID: 1505612
- Grant/Contract Number:
- FG02-06ER46327; AC02-06CH11357
- Resource Type:
- Published Article
- Journal Name:
- Science
- Additional Journal Information:
- Journal Name: Science Journal Volume: 362 Journal Issue: 6418; Journal ID: ISSN 0036-8075
- Publisher:
- American Association for the Advancement of Science (AAAS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Lee, D., Chung, B., Shi, Y., Kim, G. -Y., Campbell, N., Xue, F., Song, K., Choi, S. -Y., Podkaminer, J. P., Kim, T. H., Ryan, P. J., Kim, J. -W., Paudel, T. R., Kang, J. -H., Spinuzzi, J. W., Tenne, D. A., Tsymbal, E. Y., Rzchowski, M. S., Chen, L. Q., Lee, J., and Eom, C. B. Isostructural metal-insulator transition in VO 2. United States: N. p., 2018.
Web. doi:10.1126/science.aam9189.
Lee, D., Chung, B., Shi, Y., Kim, G. -Y., Campbell, N., Xue, F., Song, K., Choi, S. -Y., Podkaminer, J. P., Kim, T. H., Ryan, P. J., Kim, J. -W., Paudel, T. R., Kang, J. -H., Spinuzzi, J. W., Tenne, D. A., Tsymbal, E. Y., Rzchowski, M. S., Chen, L. Q., Lee, J., & Eom, C. B. Isostructural metal-insulator transition in VO 2. United States. https://doi.org/10.1126/science.aam9189
Lee, D., Chung, B., Shi, Y., Kim, G. -Y., Campbell, N., Xue, F., Song, K., Choi, S. -Y., Podkaminer, J. P., Kim, T. H., Ryan, P. J., Kim, J. -W., Paudel, T. R., Kang, J. -H., Spinuzzi, J. W., Tenne, D. A., Tsymbal, E. Y., Rzchowski, M. S., Chen, L. Q., Lee, J., and Eom, C. B. Thu .
"Isostructural metal-insulator transition in VO 2". United States. https://doi.org/10.1126/science.aam9189.
@article{osti_1483924,
title = {Isostructural metal-insulator transition in VO 2},
author = {Lee, D. and Chung, B. and Shi, Y. and Kim, G. -Y. and Campbell, N. and Xue, F. and Song, K. and Choi, S. -Y. and Podkaminer, J. P. and Kim, T. H. and Ryan, P. J. and Kim, J. -W. and Paudel, T. R. and Kang, J. -H. and Spinuzzi, J. W. and Tenne, D. A. and Tsymbal, E. Y. and Rzchowski, M. S. and Chen, L. Q. and Lee, J. and Eom, C. B.},
abstractNote = {The metal-insulator transition in correlated materials is usually coupled to a symmetry-lowering structural phase transition. This coupling not only complicates the understanding of the basic mechanism of this phenomenon but also limits the speed and endurance of prospective electronic devices. We demonstrate an isostructural, purely electronically driven metal-insulator transition in epitaxial heterostructures of an archetypal correlated material, vanadium dioxide. A combination of thin-film synthesis, structural and electrical characterizations, and theoretical modeling reveals that an interface interaction suppresses the electronic correlations without changing the crystal structure in this otherwise correlated insulator. This interaction stabilizes a nonequilibrium metallic phase and leads to an isostructural metal-insulator transition. This discovery will provide insights into phase transitions of correlated materials and may aid the design of device functionalities.},
doi = {10.1126/science.aam9189},
journal = {Science},
number = 6418,
volume = 362,
place = {United States},
year = {Thu Nov 29 00:00:00 EST 2018},
month = {Thu Nov 29 00:00:00 EST 2018}
}
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