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Title: Isostructural metal-insulator transition in VO 2

The metal-insulator transition in correlated materials is usually coupled to a symmetry-lowering structural phase transition. This coupling not only complicates the understanding of the basic mechanism of this phenomenon but also limits the speed and endurance of prospective electronic devices. We demonstrate an isostructural, purely electronically driven metal-insulator transition in epitaxial heterostructures of an archetypal correlated material, vanadium dioxide. A combination of thin-film synthesis, structural and electrical characterizations, and theoretical modeling reveals that an interface interaction suppresses the electronic correlations without changing the crystal structure in this otherwise correlated insulator. This interaction stabilizes a nonequilibrium metallic phase and leads to an isostructural metal-insulator transition. This discovery will provide insights into phase transitions of correlated materials and may aid the design of device functionalities.
Authors:
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Publication Date:
Grant/Contract Number:
FG02-06ER46327
Type:
Published Article
Journal Name:
Science
Additional Journal Information:
Journal Name: Science Journal Volume: 362 Journal Issue: 6418; Journal ID: ISSN 0036-8075
Publisher:
American Association for the Advancement of Science (AAAS)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1483924

Lee, D., Chung, B., Shi, Y., Kim, G. -Y., Campbell, N., Xue, F., Song, K., Choi, S. -Y., Podkaminer, J. P., Kim, T. H., Ryan, P. J., Kim, J. -W., Paudel, T. R., Kang, J. -H., Spinuzzi, J. W., Tenne, D. A., Tsymbal, E. Y., Rzchowski, M. S., Chen, L. Q., Lee, J., and Eom, C. B.. Isostructural metal-insulator transition in VO 2. United States: N. p., Web. doi:10.1126/science.aam9189.
Lee, D., Chung, B., Shi, Y., Kim, G. -Y., Campbell, N., Xue, F., Song, K., Choi, S. -Y., Podkaminer, J. P., Kim, T. H., Ryan, P. J., Kim, J. -W., Paudel, T. R., Kang, J. -H., Spinuzzi, J. W., Tenne, D. A., Tsymbal, E. Y., Rzchowski, M. S., Chen, L. Q., Lee, J., & Eom, C. B.. Isostructural metal-insulator transition in VO 2. United States. doi:10.1126/science.aam9189.
Lee, D., Chung, B., Shi, Y., Kim, G. -Y., Campbell, N., Xue, F., Song, K., Choi, S. -Y., Podkaminer, J. P., Kim, T. H., Ryan, P. J., Kim, J. -W., Paudel, T. R., Kang, J. -H., Spinuzzi, J. W., Tenne, D. A., Tsymbal, E. Y., Rzchowski, M. S., Chen, L. Q., Lee, J., and Eom, C. B.. 2018. "Isostructural metal-insulator transition in VO 2". United States. doi:10.1126/science.aam9189.
@article{osti_1483924,
title = {Isostructural metal-insulator transition in VO 2},
author = {Lee, D. and Chung, B. and Shi, Y. and Kim, G. -Y. and Campbell, N. and Xue, F. and Song, K. and Choi, S. -Y. and Podkaminer, J. P. and Kim, T. H. and Ryan, P. J. and Kim, J. -W. and Paudel, T. R. and Kang, J. -H. and Spinuzzi, J. W. and Tenne, D. A. and Tsymbal, E. Y. and Rzchowski, M. S. and Chen, L. Q. and Lee, J. and Eom, C. B.},
abstractNote = {The metal-insulator transition in correlated materials is usually coupled to a symmetry-lowering structural phase transition. This coupling not only complicates the understanding of the basic mechanism of this phenomenon but also limits the speed and endurance of prospective electronic devices. We demonstrate an isostructural, purely electronically driven metal-insulator transition in epitaxial heterostructures of an archetypal correlated material, vanadium dioxide. A combination of thin-film synthesis, structural and electrical characterizations, and theoretical modeling reveals that an interface interaction suppresses the electronic correlations without changing the crystal structure in this otherwise correlated insulator. This interaction stabilizes a nonequilibrium metallic phase and leads to an isostructural metal-insulator transition. This discovery will provide insights into phase transitions of correlated materials and may aid the design of device functionalities.},
doi = {10.1126/science.aam9189},
journal = {Science},
number = 6418,
volume = 362,
place = {United States},
year = {2018},
month = {11}
}

Works referenced in this record:

Projector augmented-wave method
journal, December 1994

Revised effective ionic radii and systematic studies of interatomic distances in halides and chalcogenides
journal, September 1976

From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999

Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study
journal, January 1998
  • Dudarev, S. L.; Botton, G. A.; Savrasov, S. Y.
  • Physical Review B, Vol. 57, Issue 3, p. 1505-1509
  • DOI: 10.1103/PhysRevB.57.1505

First-principles calculations of the electronic structure and spectra of strongly correlated systems: the LDA + U method
journal, January 1997
  • Anisimov, Vladimir I.; Aryasetiawan, F.; Lichtenstein, A. I.
  • Journal of Physics: Condensed Matter, Vol. 9, Issue 4, p. 767-808
  • DOI: 10.1088/0953-8984/9/4/002

Metal-insulator transitions
journal, October 1998
  • Imada, Masatoshi; Fujimori, Atsushi; Tokura, Yoshinori
  • Reviews of Modern Physics, Vol. 70, Issue 4, p. 1039-1263
  • DOI: 10.1103/RevModPhys.70.1039

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996