Theoretical Design of Robust Ferromagnetism and Bipolar Semiconductivity in Graphene-Based Nanoroads
- Univ. of Science and Technology of China, Hefei (China). International Center for Quantum Design of Functional Materials (ICQD), Hefei National Lab. for Physical Sciences at the Microscale (HFNL)
- Univ. of Louisville, KY (United States). Dept. of Physics and Astronomy
- Univ. of Science and Technology of China, Hefei (China). International Center for Quantum Design of Functional Materials (ICQD), Hefei National Lab. for Physical Sciences at the Microscale (HFNL); Univ. of Science and Technology of China, Hefei (China). Synergetic Innovation Center of Quantum Information and Quantum Physics
- Univ. of Science and Technology of China, Hefei (China). International Center for Quantum Design of Functional Materials (ICQD), Hefei National Lab. for Physical Sciences at the Microscale (HFNL); Univ. of Science and Technology of China, Hefei (China). Synergetic Innovation Center of Quantum Information and Quantum Physics; Chinese Academy of Sciences (CAS), Beijing (China). Key Lab. of Strongly-Coupled Quantum Matter Physics
The search for graphene-based materials for spintronics applications has intensified in recent years, and numerous designs have been proposed based on various modifications to pristine graphene. Despite the tremendous progress made in the past, finding a design that can be realized in practice remains a challenging task. Encouraged by recent experimental breakthroughs, here we propose a feasible scheme to realize graphene-based magnetic nanoroads. This new material consists of a half-hydrogenated graphene nanoroad embedded in a fully hydrogenated graphene sheet. Using first-principles density functional theory calculations, we demonstrate that such a design can convert nonmagnetic pristine graphene into a bipolar ferromagnetic semiconductor. More importantly, as a result of areal magnetization enabled by half-hydrogenation, the overall magnetism of such a nanoroad is very robust against a variation of either its width or orientation. We also propose a simple design of an all-electric controlled device based on the new material for the generation and regulation of a fully spin-polarized electric current.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC)
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 1482392
- Journal Information:
- Journal of Physical Chemistry. C, Journal Name: Journal of Physical Chemistry. C Journal Issue: 44 Vol. 121; ISSN 1932-7447
- Publisher:
- American Chemical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Computational Prediction of the Low‐Temperature Ferromagnetic Semiconducting 2D SiN Monolayer
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journal | September 2019 |
Emerging chemical strategies for imprinting magnetism in graphene and related 2D materials for spintronic and biomedical applications
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journal | January 2018 |
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