Weak anti-localization of two-dimensional holes in germanium beyond the diffusive regime

Chou, C. -T.; Jacobson, N. T.; Moussa, J. E.; Baczewski, A. D.; Chuang, Y.; Liu, C. -Y.; Li, J. -Y.; Lu, T. M.

doi:10.1039/C8NR05677C

Title: Weak anti-localization of two-dimensional holes in germanium beyond the diffusive regime

Journal Article · Tue Sep 18 00:00:00 EDT 2018 · Nanoscale

DOI: https://doi.org/10.1039/C8NR05677C · OSTI ID:1477314

Chou, C. -T. ^[1]; Jacobson, N. T. ^[2]; Moussa, J. E. ^[2]; Baczewski, A. D. ^[2]; Chuang, Y. ^[1]; Liu, C. -Y. ^[1]; Li, J. -Y. ^[3];

^[2]

National Taiwan Univ., Taipei (Taiwan)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
National Taiwan Univ., Taipei (Taiwan); National Nano Device Labs., Hsinchu (Taiwan)

Gate-controllable spin-orbit coupling is often one requisite for spintronic devices. For practical spin field-effect transistors, another essential requirement is ballistic spin transport, where the spin precession length is shorter than the mean free path such that the gate-controlled spin precession is not randomized by disorder. In this letter, we report the observation of a gate-induced crossover from weak localization to weak anti-localization in the magneto-resistance of a high-mobility twodimensional hole gas in a strained germanium quantum well. From the magneto-resistance, we extract the phase-coherence time, spin-orbit precession time, spin-orbit energy splitting, and cubic Rashba coefficient over a wide density range. The mobility and the mean free path increase with increasing hole density, while the spin precession length decreases due to increasingly stronger spin-orbit coupling. As the density becomes larger than , 6 x 10¹¹cm^-2, the spin precession length becomes shorter than the mean free path, and the system enters the ballistic spin transport regime. We also report here the numerical methods and code developed for calculating the magnetoresistance in the ballistic regime, where the commonly used HLN and ILP models for analyzing weak localization and anti-localization are not valid. These results pave the way toward siliconcompatible spintronic devices.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1477314

Report Number(s):: SAND--2018-10483J; 668122

Journal Information:: Nanoscale, Journal Name: Nanoscale Journal Issue: 44 Vol. 10; ISSN 2040-3364

Publisher:: Royal Society of ChemistryCopyright Statement

Country of Publication:: United States

Language:: English

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Cited By (2)

Single and double hole quantum dots in strained Ge/SiGe quantum wells Hardy, Will J.; Harris, C. Thomas; Su, Yi-Hsin Nanotechnology, Vol. 30, Issue 21 https://doi.org/10.1088/1361-6528/ab061e	journal	March 2019
Single and Double Hole Quantum Dots in Strained Ge/SiGe Quantum Wells Hardy, Will J.; Harris, C. Thomas; Su, Yi-Hsin arXiv https://doi.org/10.48550/arxiv.1808.07077	text	January 2018

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