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Title: Zirconium oxide surface passivation of crystalline silicon

This letter reports effective passivation of crystalline silicon (c-Si) surfaces by thermal atomic layer deposited zirconium oxide (ZrO x). The optimum layer thickness and activation annealing conditions are determined to be 20 nm and 300 °C for 20 min. Cross-sectional transmission electron microscopy imaging shows an approximately 1.6 nm thick SiO x interfacial layer underneath an 18 nm ZrO x layer, consistent with ellipsometry measurements (~20 nm). Capacitance-voltage measurements show that the annealed ZrO x film features a low interface defect density of 1.0 × 10 11cm -2eV -1 and a low negative film charge density of -6 × 10 10cm -2. Effective lifetimes of 673 μs and 1.1 ms are achieved on p-type and n-type 1 Ω cm undiffused c-Si wafers, respectively, corresponding to an implied open circuit voltage above 720 mV in both cases. The results demonstrate that surface passivation quality provided by ALD ZrO x is consistent with the requirements of high efficiency silicon solar cells.
Authors:
ORCiD logo [1] ;  [2] ;  [2] ;  [2] ;  [3] ;  [3] ;  [2] ;  [3]
  1. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States); Australian National Univ., Canberra, ACT (Australia)
  2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)
  3. Australian National Univ., Canberra, ACT (Australia)
Publication Date:
Grant/Contract Number:
AC02-05CH11231
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 20; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1477296

Wan, Yimao, Bullock, James, Hettick, Mark, Xu, Zhaoran, Yan, Di, Peng, Jun, Javey, Ali, and Cuevas, Andres. Zirconium oxide surface passivation of crystalline silicon. United States: N. p., Web. doi:10.1063/1.5032226.
Wan, Yimao, Bullock, James, Hettick, Mark, Xu, Zhaoran, Yan, Di, Peng, Jun, Javey, Ali, & Cuevas, Andres. Zirconium oxide surface passivation of crystalline silicon. United States. doi:10.1063/1.5032226.
Wan, Yimao, Bullock, James, Hettick, Mark, Xu, Zhaoran, Yan, Di, Peng, Jun, Javey, Ali, and Cuevas, Andres. 2018. "Zirconium oxide surface passivation of crystalline silicon". United States. doi:10.1063/1.5032226.
@article{osti_1477296,
title = {Zirconium oxide surface passivation of crystalline silicon},
author = {Wan, Yimao and Bullock, James and Hettick, Mark and Xu, Zhaoran and Yan, Di and Peng, Jun and Javey, Ali and Cuevas, Andres},
abstractNote = {This letter reports effective passivation of crystalline silicon (c-Si) surfaces by thermal atomic layer deposited zirconium oxide (ZrOx). The optimum layer thickness and activation annealing conditions are determined to be 20 nm and 300 °C for 20 min. Cross-sectional transmission electron microscopy imaging shows an approximately 1.6 nm thick SiOx interfacial layer underneath an 18 nm ZrOx layer, consistent with ellipsometry measurements (~20 nm). Capacitance-voltage measurements show that the annealed ZrOx film features a low interface defect density of 1.0 × 1011cm-2eV-1 and a low negative film charge density of -6 × 1010cm-2. Effective lifetimes of 673 μs and 1.1 ms are achieved on p-type and n-type 1 Ω cm undiffused c-Si wafers, respectively, corresponding to an implied open circuit voltage above 720 mV in both cases. The results demonstrate that surface passivation quality provided by ALD ZrOx is consistent with the requirements of high efficiency silicon solar cells.},
doi = {10.1063/1.5032226},
journal = {Applied Physics Letters},
number = 20,
volume = 112,
place = {United States},
year = {2018},
month = {5}
}

Works referenced in this record:

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  • Javey, Ali; Kim, Hyoungsub; Brink, Markus
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