Gate-Induced Interfacial Superconductivity in 1T-SnSe2

Zeng, Junwen; Liu, Erfu; Fu, Yajun; Chen, Zhuoyu; Pan, Chen; Wang, Chenyu; Wang, Miao; Wang, Yaojia; Xu, Kang; Cai, Songhua; Yan, Xingxu; Wang, Yu; Liu, Xiaowei; Wang, Peng; Liang, Shi-Jun; Cui, Yi; Hwang, Harold Y.; Yuan, Hongtao; Miao, Feng

doi:10.1021/acs.nanolett.7b05157

Title: Gate-Induced Interfacial Superconductivity in 1T-SnSe₂

Abstract

Layered metal chalcogenide materials provide a versatile platform to investigate emergent phenomena and two-dimensional (2D) superconductivity at/near the atomically thin limit. In particular, gate-induced interfacial superconductivity realized by the use of an electric-double-layer transistor (EDLT) has greatly extended the capability to electrically induce superconductivity in oxides, nitrides, and transition metal chalcogenides and enable one to explore new physics, such as the Ising pairing mechanism. Exploiting gate-induced superconductivity in various materials can provide us with additional platforms to understand emergent interfacial superconductivity. In this paper, we report the discovery of gate-induced 2D superconductivity in layered 1T-SnSe₂, a typical member of the main-group metal dichalcogenide (MDC) family, using an EDLT gating geometry. A superconducting transition temperature T_c ≈ 3.9 K was demonstrated at the EDL interface. The 2D nature of the superconductivity therein was further confirmed based on (1) a 2D Tinkham description of the angle-dependent upper critical field B_c2, (2) the existence of a quantum creep state as well as a large ratio of the coherence length to the thickness of superconductivity. Interestingly, the in-plane B_c2 approaching zero temperature was found to be 2–3 times higher than the Pauli limit, which might be related to an electric field-modulated spin–orbit interaction. Finally,more »« less

Authors:

Zeng, Junwen ^[1]; Liu, Erfu ^[1]; Fu, Yajun ^[2];

^[3]; Pan, Chen ^[1]; Wang, Chenyu ^[1]; Wang, Miao ^[1]; Wang, Yaojia ^[1]; Xu, Kang ^[1]; Cai, Songhua ^[4]; Yan, Xingxu ^[4]; Wang, Yu ^[1]; Liu, Xiaowei ^[1];

^[4]; Liang, Shi-Jun ^[1];

^[3]; Hwang, Harold Y. ^[3]; Yuan, Hongtao ^[5];

^[1]

Nanjing Univ. (China). National Lab. of Solid State Microstructures. School of Physics. Collaborative Innovation Center of Advanced Microstructures
Nanjing Univ. (China). National Lab. of Solid State Microstructures. School of Physics. Collaborative Innovation Center of Advanced Microstructures; Southwest Univ. of Science and Technology, Mianyang (China). School of Material Science and Engineering
Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences
Nanjing Univ. (China). College of Engineering and Applied Sciences
Nanjing Univ. (China). National Lab. of Solid State Microstructures. School of Physics. Collaborative Innovation Center of Advanced Microstructures; Stanford Univ., CA (United States). Geballe Lab. for Advanced Materials; SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Inst. for Materials and Energy Sciences

Publication Date:: Wed Jan 31 00:00:00 EST 2018

Research Org.:: SLAC National Accelerator Lab., Menlo Park, CA (United States); Nanjing Univ. (China)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Key Basic Research Program of China; National Natural Science Foundation of China (NSFC); Fundamental Research Funds for the Central Universities (China); Collaborative Innovation Center of Advanced Microstructures (China)

OSTI Identifier:: 1471528

Grant/Contract Number:: AC02-76SF00515; 2015CB921600; 2013CBA01603; 61625402; 11374142; 61574076; 11474147

Resource Type:: Accepted Manuscript

Journal Name:: Nano Letters

Additional Journal Information:: Journal Volume: 18; Journal Issue: 2; Journal ID: ISSN 1530-6984

Publisher:: American Chemical Society

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; electric-double-layer transistor; interfacial superconductivity; metal dichalcogenides; SnSe2

Citation Formats


                    Zeng, Junwen, Liu, Erfu, Fu, Yajun, Chen, Zhuoyu, Pan, Chen, Wang, Chenyu, Wang, Miao, Wang, Yaojia, Xu, Kang, Cai, Songhua, Yan, Xingxu, Wang, Yu, Liu, Xiaowei, Wang, Peng, Liang, Shi-Jun, Cui, Yi, Hwang, Harold Y., Yuan, Hongtao, and Miao, Feng. Gate-Induced Interfacial Superconductivity in 1T-SnSe2.  United States: N. p., 2018. 
Web.  doi:10.1021/acs.nanolett.7b05157.

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                    Zeng, Junwen, Liu, Erfu, Fu, Yajun, Chen, Zhuoyu, Pan, Chen, Wang, Chenyu, Wang, Miao, Wang, Yaojia, Xu, Kang, Cai, Songhua, Yan, Xingxu, Wang, Yu, Liu, Xiaowei, Wang, Peng, Liang, Shi-Jun, Cui, Yi, Hwang, Harold Y., Yuan, Hongtao, & Miao, Feng. Gate-Induced Interfacial Superconductivity in 1T-SnSe2.  United States.  https://doi.org/10.1021/acs.nanolett.7b05157

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                    Zeng, Junwen, Liu, Erfu, Fu, Yajun, Chen, Zhuoyu, Pan, Chen, Wang, Chenyu, Wang, Miao, Wang, Yaojia, Xu, Kang, Cai, Songhua, Yan, Xingxu, Wang, Yu, Liu, Xiaowei, Wang, Peng, Liang, Shi-Jun, Cui, Yi, Hwang, Harold Y., Yuan, Hongtao, and Miao, Feng. Wed .  
"Gate-Induced Interfacial Superconductivity in 1T-SnSe2".  United States.  https://doi.org/10.1021/acs.nanolett.7b05157.  https://www.osti.gov/servlets/purl/1471528.

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@article{osti_1471528,

  title        = {Gate-Induced Interfacial Superconductivity in 1T-SnSe2},

  author       = {Zeng, Junwen and Liu, Erfu and Fu, Yajun and Chen, Zhuoyu and Pan, Chen and Wang, Chenyu and Wang, Miao and Wang, Yaojia and Xu, Kang and Cai, Songhua and Yan, Xingxu and Wang, Yu and Liu, Xiaowei and Wang, Peng and Liang, Shi-Jun and Cui, Yi and Hwang, Harold Y. and Yuan, Hongtao and Miao, Feng},

  abstractNote = {Layered metal chalcogenide materials provide a versatile platform to investigate emergent phenomena and two-dimensional (2D) superconductivity at/near the atomically thin limit. In particular, gate-induced interfacial superconductivity realized by the use of an electric-double-layer transistor (EDLT) has greatly extended the capability to electrically induce superconductivity in oxides, nitrides, and transition metal chalcogenides and enable one to explore new physics, such as the Ising pairing mechanism. Exploiting gate-induced superconductivity in various materials can provide us with additional platforms to understand emergent interfacial superconductivity. In this paper, we report the discovery of gate-induced 2D superconductivity in layered 1T-SnSe2, a typical member of the main-group metal dichalcogenide (MDC) family, using an EDLT gating geometry. A superconducting transition temperature Tc ≈ 3.9 K was demonstrated at the EDL interface. The 2D nature of the superconductivity therein was further confirmed based on (1) a 2D Tinkham description of the angle-dependent upper critical field Bc2, (2) the existence of a quantum creep state as well as a large ratio of the coherence length to the thickness of superconductivity. Interestingly, the in-plane Bc2 approaching zero temperature was found to be 2–3 times higher than the Pauli limit, which might be related to an electric field-modulated spin–orbit interaction. Finally, such results provide a new perspective to expand the material matrix available for gate-induced 2D superconductivity and the fundamental understanding of interfacial superconductivity.},

  doi          = {10.1021/acs.nanolett.7b05157},

  journal      = {Nano Letters},

  number       = 2,

  volume       = 18,

  place        = {United States},

  year         = {Wed Jan 31 00:00:00 EST 2018},

  month        = {Wed Jan 31 00:00:00 EST 2018}

}

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Figure 1: Crystal structure of 1T-SnSe₂, transfer curve, and superconductivity of SnSe₂-EDLT. (a) The top and side views of the crystal structure. (b) Sketch of a SnSe₂-EDLT device. (c) Optical microscope image of a typical multiterminal Hall bar device. The scale bar is 10 μm. (d–f) Transfer curve and superconductivitymore »

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Title: Gate-Induced Interfacial Superconductivity in 1T-SnSe2

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Large-area high-quality 2D ultrathin Mo2C superconducting crystals journal, August 2015

Superconductivity above 100 K in single-layer FeSe films on doped SrTiO3 journal, November 2014

Superconducting Interfaces Between Insulating Oxides journal, August 2007

Quantum Griffiths singularity of superconductor-metal transition in Ga thin films journal, October 2015

Gate-induced superconductivity in atomically thin MoS2 crystals journal, January 2016

Electrostatically Induced Superconductivity at the Surface of WS 2 journal, January 2015

Controlling many-body states by the electric-field effect in a two-dimensional material journal, December 2015

Evidence for two-dimensional Ising superconductivity in gated MoS2 journal, November 2015

Superconductivity protected by spin–valley locking in ion-gated MoS2 journal, December 2015

Superconductivity Series in Transition Metal Dichalcogenides by Ionic Gating journal, August 2015

Electric-field-induced superconductivity at 9.4 K in a layered transition metal disulphide MoS 2 journal, July 2012

Superconducting Dome in a Gate-Tuned Band Insulator journal, November 2012

Gated tuned superconductivity and phonon softening in monolayer and bilayer MoS2 journal, September 2017

Metallic ground state in an ion-gated two-dimensional superconductor journal, October 2015

Liquid-gated interface superconductivity on an atomically flat film journal, November 2009

Electric-field-induced superconductivity in an insulator journal, October 2008

Discovery of superconductivity in KTaO3 by electrostatic carrier doping journal, May 2011

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets journal, April 2013

Zeeman-type spin splitting controlled by an electric field journal, July 2013

Atomically Thin MoS2 A New Direct-Gap Semiconductor journal, September 2010

Tin Disulfide—An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics journal, September 2014

Electronic Structure of Host Lattices for Intercalation Compounds: SnS 2 , SnSe 2 , ZrS 2 , and TaS 2 journal, November 1998

Electronic structure of SnS 2 , SnSe 2 , CdI 2 and PbI 2 journal, November 1979

Electronic Energy-Band Structure of Sn S 2 and Sn Se 2 journal, April 1972

High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe journal, November 2016

Cyclotron resonance studies on bulk and two-dimensional conduction electrons in InSe journal, October 1982

Liquid-gated electric-double-layer transistor on layered metal dichalcogenide, SnS2 journal, January 2011

XPS and ESR of tin diselenide containing phosphorus cobaltocene [(SnSe2)-1%P{CoCp2}0.36] journal, January 1992

Observation of superconductivity in the organometallic intercalation compound SnSe 2 {Co(η-C 5 H 5 ) 2 } 0.33 journal, January 1990

Single-crystal conductivity study of the tin dichalcogenides SnS 2 –x Se x intercalated with cobaltocene journal, January 1991

Theoretical study of the intercalation of cobaltocene in metal chalcogenides journal, January 1998

Relatively isotropic superconductivity at 8.3 K in the Lamellar organometallic intercalate SnSe2{Co(?-C5H5)2}0.3 journal, October 1992

Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2 journal, April 2014

Fast Photoresponse from 1T Tin Diselenide Atomic Layers journal, November 2015

Raman spectra of SnS2 and SnSe2 journal, December 1976

Gate Tuning of Electronic Phase Transitions in Two-Dimensional NbSe 2 journal, August 2016

Enhancement of superconductivity by a parallel magnetic field in two-dimensional superconductors journal, August 2011

Observation of Quantum Dissipation in the Vortex State of a Highly Disordered Superconducting Thin Film journal, February 1996

Nature of the quantum metal in a two-dimensional crystalline superconductor journal, December 2015

The flux-line lattice in superconductors journal, November 1995

Pinning and creep in layered superconductors journal, April 1990

Magnetic-field-tuned superconductor-insulator transition in two-dimensional films journal, August 1990

Superconducting-Insulating Transition in Two-Dimensional a -MoGe Thin Films journal, April 1995

Transport through Quantum Melts journal, April 1998

A note on the Maximum Critical Field of High‐Field Superconductors journal, September 1962

Upper Limit for the Critical Field in Hard Superconductors journal, September 1962

Ising pairing in superconducting NbSe2 atomic layers journal, November 2015

Intrinsic spin-orbit coupling in superconducting δ -doped SrTiO 3 heterostructures journal, August 2012

2D superconductivity and vortex dynamics in 1T-MoS2 journal, December 2018

Superconductivity in Li-intercalated 1 T − SnSe 2 driven by electric field gating journal, May 2019

High performance tin diselenide photodetectors dependent on thickness: a vertical graphene sandwiched device and interfacial mechanism journal, January 2019

Gate‐Tunable Electrical Transport in Thin 2M‐WS 2 Flakes journal, July 2019

Signature of quantum Griffiths singularity state in a layered quasi-one-dimensional superconductor journal, November 2018

Spacing dependent and cation doping independent superconductivity in intercalated 1T 2D SnSe 2 journal, September 2019

Ionic-liquid-gating setup for stable measurements and reduced electronic inhomogeneity at low temperatures journal, October 2018

Van der Waals SnSe 2(1− x ) S 2 x Alloys: Composition‐Dependent Bowing Coefficient and Electron–Phonon Interaction journal, December 2019

Electronic structure of SnSe 2 films grown by molecular beam epitaxy journal, March 2019

Two-dimensional hole transport in ion-gated diamond surfaces: A brief review (Review article) journal, November 2019

2D superconductivity and vortex dynamics in 1T-MoS2 text, January 2018

Ionic-liquid-gating setup for stable measurements and reduced electronic inhomogeneity at low temperatures text, January 2018

Title: Gate-Induced Interfacial Superconductivity in 1T-SnSe₂

Large-area high-quality 2D ultrathin Mo2C superconducting crystals
journal, August 2015

Superconductivity above 100 K in single-layer FeSe films on doped SrTiO3
journal, November 2014

Superconducting Interfaces Between Insulating Oxides
journal, August 2007

Quantum Griffiths singularity of superconductor-metal transition in Ga thin films
journal, October 2015

Gate-induced superconductivity in atomically thin MoS2 crystals
journal, January 2016

Electrostatically Induced Superconductivity at the Surface of WS ₂
journal, January 2015

Controlling many-body states by the electric-field effect in a two-dimensional material
journal, December 2015

Evidence for two-dimensional Ising superconductivity in gated MoS2
journal, November 2015

Superconductivity protected by spin–valley locking in ion-gated MoS2
journal, December 2015

Superconductivity Series in Transition Metal Dichalcogenides by Ionic Gating
journal, August 2015

Electric-field-induced superconductivity at 9.4 K in a layered transition metal disulphide MoS ₂
journal, July 2012

Superconducting Dome in a Gate-Tuned Band Insulator
journal, November 2012

Gated tuned superconductivity and phonon softening in monolayer and bilayer MoS2
journal, September 2017

Metallic ground state in an ion-gated two-dimensional superconductor
journal, October 2015

Liquid-gated interface superconductivity on an atomically flat film
journal, November 2009

Electric-field-induced superconductivity in an insulator
journal, October 2008

Discovery of superconductivity in KTaO3 by electrostatic carrier doping
journal, May 2011

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
journal, April 2013

Zeeman-type spin splitting controlled by an electric field
journal, July 2013

Atomically Thin ${MoS}_{2}$ A New Direct-Gap Semiconductor
journal, September 2010

Tin Disulfide—An Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics
journal, September 2014

Electronic Structure of Host Lattices for Intercalation Compounds: SnS ₂ , SnSe ₂ , ZrS ₂ , and TaS ₂
journal, November 1998

Electronic structure of SnS ₂ , SnSe ₂ , CdI ₂ and PbI ₂
journal, November 1979

Electronic Energy-Band Structure of Sn $S_{2}$ and Sn ${Se}_{2}$
journal, April 1972

High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
journal, November 2016

Cyclotron resonance studies on bulk and two-dimensional conduction electrons in InSe
journal, October 1982

Liquid-gated electric-double-layer transistor on layered metal dichalcogenide, SnS2
journal, January 2011

XPS and ESR of tin diselenide containing phosphorus cobaltocene [(SnSe2)-1%P{CoCp2}0.36]
journal, January 1992

Observation of superconductivity in the organometallic intercalation compound SnSe ₂ {Co(η-C ₅ H ₅ ) ₂ } _0.33
journal, January 1990

Single-crystal conductivity study of the tin dichalcogenides SnS _{2 –x} Se _x intercalated with cobaltocene
journal, January 1991

Theoretical study of the intercalation of cobaltocene in metal chalcogenides
journal, January 1998

Relatively isotropic superconductivity at 8.3 K in the Lamellar organometallic intercalate SnSe2{Co(?-C5H5)2}0.3
journal, October 1992

Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2
journal, April 2014

Fast Photoresponse from 1T Tin Diselenide Atomic Layers
journal, November 2015

Raman spectra of SnS2 and SnSe2
journal, December 1976

Gate Tuning of Electronic Phase Transitions in Two-Dimensional ${NbSe}_{2}$
journal, August 2016

Enhancement of superconductivity by a parallel magnetic field in two-dimensional superconductors
journal, August 2011

Observation of Quantum Dissipation in the Vortex State of a Highly Disordered Superconducting Thin Film
journal, February 1996

Nature of the quantum metal in a two-dimensional crystalline superconductor
journal, December 2015

The flux-line lattice in superconductors
journal, November 1995

Pinning and creep in layered superconductors
journal, April 1990

Magnetic-field-tuned superconductor-insulator transition in two-dimensional films
journal, August 1990

Superconducting-Insulating Transition in Two-Dimensional $a$ -MoGe Thin Films
journal, April 1995

Transport through Quantum Melts
journal, April 1998

A note on the Maximum Critical Field of High‐Field Superconductors
journal, September 1962

Upper Limit for the Critical Field in Hard Superconductors
journal, September 1962

Ising pairing in superconducting NbSe2 atomic layers
journal, November 2015

Intrinsic spin-orbit coupling in superconducting $δ$ -doped SrTiO $_{3}$ heterostructures
journal, August 2012

2D superconductivity and vortex dynamics in 1T-MoS2
journal, December 2018

Superconductivity in Li-intercalated $1 T − {SnSe}_{2}$ driven by electric field gating
journal, May 2019

High performance tin diselenide photodetectors dependent on thickness: a vertical graphene sandwiched device and interfacial mechanism
journal, January 2019

Gate‐Tunable Electrical Transport in Thin 2M‐WS ₂ Flakes
journal, July 2019

Signature of quantum Griffiths singularity state in a layered quasi-one-dimensional superconductor
journal, November 2018

Spacing dependent and cation doping independent superconductivity in intercalated 1T 2D SnSe ₂
journal, September 2019

Ionic-liquid-gating setup for stable measurements and reduced electronic inhomogeneity at low temperatures
journal, October 2018

Van der Waals SnSe ₂₍₁₋ _x ₎ S ₂ _x Alloys: Composition‐Dependent Bowing Coefficient and Electron–Phonon Interaction
journal, December 2019

Electronic structure of SnSe ₂ films grown by molecular beam epitaxy
journal, March 2019

Two-dimensional hole transport in ion-gated diamond surfaces: A brief review (Review article)
journal, November 2019

2D superconductivity and vortex dynamics in 1T-MoS2
text, January 2018

Ionic-liquid-gating setup for stable measurements and reduced electronic inhomogeneity at low temperatures
text, January 2018