Reduced defect density at the CZTSSe/CdS interface by atomic layer deposition of Al2O3
Abstract
The greatest challenge for improving the power conversion efficiency of Cu2ZnSn(S,Se)4 (CZTSSe)/CdS/ZnO thin film solar cells is increasing the open circuit voltage (VOC). Probable leading causes of the VOC deficit in state-of-the-art CZTSSe devices have been identified as bulk recombination, band tails, and the intertwined effects of CZTSSe/CdS band offset, interface defects, and interface recombination. Here, in this work, we demonstrate the modification of the CZTSSe absorber/CdS buffer interface following the deposition of 1 nm-thick Al2O3 layers by atomic layer deposition (ALD) near room temperature. Capacitance-voltage profiling and quantum efficiency measurements reveal that ALD-Al2O3 interface modification reduces the density of acceptor-like states at the heterojunction resulting in reduced interface recombination and wider depletion width. Indications of increased VOC resulting from the modification of the heterojunction interface as a result of ALD-Al2O3 treatment are presented. These results, while not conclusive for application to state-of-the-art high efficiency CZTSSe devices, suggest the need for further studies as it is probable that interface recombination contributes to reduced VOC even in such devices.
- Authors:
-
- Univ. of Utah, Salt Lake City, UT (United States). Dept. of Electrical and Computer Engineering
- AQT Solar, Inc., Sunnyvale, CA (United States)
- Univ. of Utah, Salt Lake City, UT (United States). Dept. of Electrical and Computer Engineering, and Dept. of Materials Science and Engineering
- Publication Date:
- Research Org.:
- Univ. of Utah, Salt Lake City, UT (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE
- OSTI Identifier:
- 1471099
- Alternate Identifier(s):
- OSTI ID: 1253658
- Grant/Contract Number:
- SC0001630
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 119; Journal Issue: 19; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Erkan, Mehmet Eray, Chawla, Vardaan, and Scarpulla, Michael A. Reduced defect density at the CZTSSe/CdS interface by atomic layer deposition of Al2O3. United States: N. p., 2016.
Web. doi:10.1063/1.4948947.
Erkan, Mehmet Eray, Chawla, Vardaan, & Scarpulla, Michael A. Reduced defect density at the CZTSSe/CdS interface by atomic layer deposition of Al2O3. United States. https://doi.org/10.1063/1.4948947
Erkan, Mehmet Eray, Chawla, Vardaan, and Scarpulla, Michael A. Wed .
"Reduced defect density at the CZTSSe/CdS interface by atomic layer deposition of Al2O3". United States. https://doi.org/10.1063/1.4948947. https://www.osti.gov/servlets/purl/1471099.
@article{osti_1471099,
title = {Reduced defect density at the CZTSSe/CdS interface by atomic layer deposition of Al2O3},
author = {Erkan, Mehmet Eray and Chawla, Vardaan and Scarpulla, Michael A.},
abstractNote = {The greatest challenge for improving the power conversion efficiency of Cu2ZnSn(S,Se)4 (CZTSSe)/CdS/ZnO thin film solar cells is increasing the open circuit voltage (VOC). Probable leading causes of the VOC deficit in state-of-the-art CZTSSe devices have been identified as bulk recombination, band tails, and the intertwined effects of CZTSSe/CdS band offset, interface defects, and interface recombination. Here, in this work, we demonstrate the modification of the CZTSSe absorber/CdS buffer interface following the deposition of 1 nm-thick Al2O3 layers by atomic layer deposition (ALD) near room temperature. Capacitance-voltage profiling and quantum efficiency measurements reveal that ALD-Al2O3 interface modification reduces the density of acceptor-like states at the heterojunction resulting in reduced interface recombination and wider depletion width. Indications of increased VOC resulting from the modification of the heterojunction interface as a result of ALD-Al2O3 treatment are presented. These results, while not conclusive for application to state-of-the-art high efficiency CZTSSe devices, suggest the need for further studies as it is probable that interface recombination contributes to reduced VOC even in such devices.},
doi = {10.1063/1.4948947},
journal = {Journal of Applied Physics},
number = 19,
volume = 119,
place = {United States},
year = {Wed May 18 00:00:00 EDT 2016},
month = {Wed May 18 00:00:00 EDT 2016}
}
Web of Science
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