Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design
- Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Harvard Univ., Cambridge, MA (United States). Dept. of Physics
- Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Univ. of Rochester, NY (United States). Dept. of Electrical and Computer Engineering
- National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States). NIST Center for Neutron Research
- Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division and Nanoscience and Technology Division
Antiferromagnets (AFMs) have recently gathered a large amount of attention as a potential replacement for ferromagnets (FMs) in spintronic devices due to their lack of stray magnetic fields, invisibility to external magnetic probes, and faster magneti- zation dynamics. Their development into a practical technology, however, has been hampered by the small number of materials where the antiferromagnetic state can be both controlled and read out. We show here, that by relaxing the strict criterion on pure antiferromagnetism, we can engineer a new class of magnetic materials that 1 overcome these limitations. This is accomplished by stabilizing a non-collinear mag- netic phase in LaNiO3/La2/3Sr1/3MnO3 superlattices. This state can be continuously tuned between AFM and FM coupling through varying either superlattice spacing, strain, applied magnetic field, or temperature. By using this new “knob” to tune magnetic ordering, we take a nanoscale materials-by-design approach to engineering ferromagnetic-like controllability into antiferromagnetic synthetic magnetic structures. This approach can be used to trade-off between the favorable and unfavorable proper- ties of FMs and AFMs when designing realistic resistive antiferromagnetic memories. We demonstrate a memory device in one such superlattice, where the magnetic state of the non-collinear antiferromagnet is reversibly switched between different orientations using a small magnetic field and read out in real time with anisotropic magnetoresistance measurements.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
- Grant/Contract Number:
- AC02-06CH11357
- OSTI ID:
- 1470770
- Journal Information:
- Physical Review Applied, Journal Name: Physical Review Applied Journal Issue: 4 Vol. 9; ISSN 2331-7019; ISSN PRAHB2
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Huge magnetoresistance and ultrasharp metamagnetic transition in polycrystalline Sm0.5Ca0.25Sr0.25MnO3
|
journal | September 2018 |
Recent progress on flexible inorganic single-crystalline functional oxide films for advanced electronics
|
journal | January 2019 |
Emergent c -axis magnetic helix in manganite-nickelate superlattices
|
journal | November 2018 |
| Huge magnetoresistance and ultra-sharp metamagnetic transition in polycrystalline ${Sm_{0.5}Ca_{0.25}Sr_{0.25}MnO_3}$ | preprint | January 2017 |
| Emergent c-axis magnetic helix in manganite-nickelate superlattices | text | January 2018 |
Similar Records
Magnetization switching and inverted hysteresis in perpendicular antiferromagnetic superlattices
Spin density wave instability in a ferromagnet