Plasma Jet Printing and in Situ Reduction of Highly Acidic Graphene Oxide
Abstract
Miniaturization of electronic devices and the advancement of Internet of Things pose exciting challenges to develop technologies for patterned deposition of functional nanomaterials. Printed and flexible electronic devices and energy storage devices can be embedded onto clothing or other flexible surfaces. Graphene oxide (GO) has gained much attention in printed electronics due its solution processability, robustness, and high electrical conductivity in the reduced state. We introduce an approach to print GO films from highly acidic suspensions with in situ reduction using an atmospheric pressure plasma jet. Low-temperature plasma of a He and H2 mixture was used successfully to reduce a highly acidic GO suspension (pH < 2) in situ during deposition. This technique overcomes the multiple intermediate steps required to increase the conductivity of deposited GO. X-ray spectroscopic studies confirmed that the reaction intermediates and the concentration of oxygen functionalities bonded to GO have been reduced significantly by this approach without any additional steps. Moreover, the reduced GO films showed enhanced conductivity. Hence, this technique has a strong potential for printing conducting patterns of GO for a range of large-scale applications.
- Authors:
-
[2];
[2];
[5]
- The Open Univ., Milton Keynes (United Kingdom). School of Engineering and Innovation; NASA Ames Research Center (ARC), Moffett Field, Mountain View, CA (United States); Universities Space Research Association (USRA), Mountain View, CA (United States)
- The Open Univ., Milton Keynes (United Kingdom). School of Engineering and Innovation
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- NASA Ames Research Center (ARC), Moffett Field, Mountain View, CA (United States)
- NASA Ames Research Center (ARC), Moffett Field, Mountain View, CA (United States); Universities Space Research Association (USRA), Mountain View, CA (United States)
- Publication Date:
- Research Org.:
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); UK-India Education and Research Initiative (UKIERI); National Aeronautics and Space Administration (NASA)
- OSTI Identifier:
- 1470749
- Grant/Contract Number:
- AC02-76SF00515; NNX12AK33A
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ACS Nano
- Additional Journal Information:
- Journal Volume: 12; Journal Issue: 6; Journal ID: ISSN 1936-0851
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 42 ENGINEERING; flexible electronics; functionalization; graphene oxide; plasma jet; printing; reduction; surface coating
Citation Formats
Dey, Avishek, Krishnamurthy, Satheesh, Bowen, James, Nordlund, Dennis, Meyyappan, M., and Gandhiraman, Ram P. Plasma Jet Printing and in Situ Reduction of Highly Acidic Graphene Oxide. United States: N. p., 2018.
Web. doi:10.1021/acsnano.8b00903.
Dey, Avishek, Krishnamurthy, Satheesh, Bowen, James, Nordlund, Dennis, Meyyappan, M., & Gandhiraman, Ram P. Plasma Jet Printing and in Situ Reduction of Highly Acidic Graphene Oxide. United States. https://doi.org/10.1021/acsnano.8b00903
Dey, Avishek, Krishnamurthy, Satheesh, Bowen, James, Nordlund, Dennis, Meyyappan, M., and Gandhiraman, Ram P. Fri .
"Plasma Jet Printing and in Situ Reduction of Highly Acidic Graphene Oxide". United States. https://doi.org/10.1021/acsnano.8b00903. https://www.osti.gov/servlets/purl/1470749.
@article{osti_1470749,
title = {Plasma Jet Printing and in Situ Reduction of Highly Acidic Graphene Oxide},
author = {Dey, Avishek and Krishnamurthy, Satheesh and Bowen, James and Nordlund, Dennis and Meyyappan, M. and Gandhiraman, Ram P.},
abstractNote = {Miniaturization of electronic devices and the advancement of Internet of Things pose exciting challenges to develop technologies for patterned deposition of functional nanomaterials. Printed and flexible electronic devices and energy storage devices can be embedded onto clothing or other flexible surfaces. Graphene oxide (GO) has gained much attention in printed electronics due its solution processability, robustness, and high electrical conductivity in the reduced state. We introduce an approach to print GO films from highly acidic suspensions with in situ reduction using an atmospheric pressure plasma jet. Low-temperature plasma of a He and H2 mixture was used successfully to reduce a highly acidic GO suspension (pH < 2) in situ during deposition. This technique overcomes the multiple intermediate steps required to increase the conductivity of deposited GO. X-ray spectroscopic studies confirmed that the reaction intermediates and the concentration of oxygen functionalities bonded to GO have been reduced significantly by this approach without any additional steps. Moreover, the reduced GO films showed enhanced conductivity. Hence, this technique has a strong potential for printing conducting patterns of GO for a range of large-scale applications.},
doi = {10.1021/acsnano.8b00903},
journal = {ACS Nano},
number = 6,
volume = 12,
place = {United States},
year = {Fri May 18 00:00:00 EDT 2018},
month = {Fri May 18 00:00:00 EDT 2018}
}
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Figure 1: Proposed plasma bypass using an APPJ.
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