skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Plasma Jet Printing and in Situ Reduction of Highly Acidic Graphene Oxide

Abstract

Miniaturization of electronic devices and the advancement of Internet of Things pose exciting challenges to develop technologies for patterned deposition of functional nanomaterials. Printed and flexible electronic devices and energy storage devices can be embedded onto clothing or other flexible surfaces. Graphene oxide (GO) has gained much attention in printed electronics due its solution processability, robustness, and high electrical conductivity in the reduced state. We introduce an approach to print GO films from highly acidic suspensions with in situ reduction using an atmospheric pressure plasma jet. Low-temperature plasma of a He and H 2 mixture was used successfully to reduce a highly acidic GO suspension (pH < 2) in situ during deposition. This technique overcomes the multiple intermediate steps required to increase the conductivity of deposited GO. X-ray spectroscopic studies confirmed that the reaction intermediates and the concentration of oxygen functionalities bonded to GO have been reduced significantly by this approach without any additional steps. Moreover, the reduced GO films showed enhanced conductivity. Hence, this technique has a strong potential for printing conducting patterns of GO for a range of large-scale applications.

Authors:
 [1]; ORCiD logo [2]; ORCiD logo [2];  [3];  [4]; ORCiD logo [5]
  1. The Open Univ., Milton Keynes (United Kingdom). School of Engineering and Innovation; NASA Ames Research Center (ARC), Moffett Field, Mountain View, CA (United States); Universities Space Research Association (USRA), Mountain View, CA (United States)
  2. The Open Univ., Milton Keynes (United Kingdom). School of Engineering and Innovation
  3. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  4. NASA Ames Research Center (ARC), Moffett Field, Mountain View, CA (United States)
  5. NASA Ames Research Center (ARC), Moffett Field, Mountain View, CA (United States); Universities Space Research Association (USRA), Mountain View, CA (United States)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); UK-India Education and Research Initiative (UKIERI); National Aeronautic and Space Administration (NASA)
OSTI Identifier:
1470749
Grant/Contract Number:  
AC02-76SF00515; NNX12AK33A
Resource Type:
Accepted Manuscript
Journal Name:
ACS Nano
Additional Journal Information:
Journal Volume: 12; Journal Issue: 6; Journal ID: ISSN 1936-0851
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 42 ENGINEERING; flexible electronics; functionalization; graphene oxide; plasma jet; printing; reduction; surface coating

Citation Formats

Dey, Avishek, Krishnamurthy, Satheesh, Bowen, James, Nordlund, Dennis, Meyyappan, M., and Gandhiraman, Ram P. Plasma Jet Printing and in Situ Reduction of Highly Acidic Graphene Oxide. United States: N. p., 2018. Web. doi:10.1021/acsnano.8b00903.
Dey, Avishek, Krishnamurthy, Satheesh, Bowen, James, Nordlund, Dennis, Meyyappan, M., & Gandhiraman, Ram P. Plasma Jet Printing and in Situ Reduction of Highly Acidic Graphene Oxide. United States. doi:10.1021/acsnano.8b00903.
Dey, Avishek, Krishnamurthy, Satheesh, Bowen, James, Nordlund, Dennis, Meyyappan, M., and Gandhiraman, Ram P. Fri . "Plasma Jet Printing and in Situ Reduction of Highly Acidic Graphene Oxide". United States. doi:10.1021/acsnano.8b00903. https://www.osti.gov/servlets/purl/1470749.
@article{osti_1470749,
title = {Plasma Jet Printing and in Situ Reduction of Highly Acidic Graphene Oxide},
author = {Dey, Avishek and Krishnamurthy, Satheesh and Bowen, James and Nordlund, Dennis and Meyyappan, M. and Gandhiraman, Ram P.},
abstractNote = {Miniaturization of electronic devices and the advancement of Internet of Things pose exciting challenges to develop technologies for patterned deposition of functional nanomaterials. Printed and flexible electronic devices and energy storage devices can be embedded onto clothing or other flexible surfaces. Graphene oxide (GO) has gained much attention in printed electronics due its solution processability, robustness, and high electrical conductivity in the reduced state. We introduce an approach to print GO films from highly acidic suspensions with in situ reduction using an atmospheric pressure plasma jet. Low-temperature plasma of a He and H2 mixture was used successfully to reduce a highly acidic GO suspension (pH < 2) in situ during deposition. This technique overcomes the multiple intermediate steps required to increase the conductivity of deposited GO. X-ray spectroscopic studies confirmed that the reaction intermediates and the concentration of oxygen functionalities bonded to GO have been reduced significantly by this approach without any additional steps. Moreover, the reduced GO films showed enhanced conductivity. Hence, this technique has a strong potential for printing conducting patterns of GO for a range of large-scale applications.},
doi = {10.1021/acsnano.8b00903},
journal = {ACS Nano},
number = 6,
volume = 12,
place = {United States},
year = {2018},
month = {5}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 1 work
Citation information provided by
Web of Science

Save / Share: