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Title: Band gap reduction in van der Waals layered 2D materials via a de-charge transfer mechanism

Abstract

The critical role of de-charge transfer in tuning the band gap of layered 2D materials.

Authors:
ORCiD logo [1];  [2];  [2];  [2];  [2]; ORCiD logo [2];  [2];  [3];  [4]
  1. Hunan Provincial Key Laboratory of Micro-Nano Energy Materials and Devices, Xiangtan University, Hunan 411105, People's Republic of China, Department of Materials Science and Engineering
  2. Department of Materials Science and Engineering, University of Utah, Salt Lake City, USA
  3. Hunan Provincial Key Laboratory of Micro-Nano Energy Materials and Devices, Xiangtan University, Hunan 411105, People's Republic of China
  4. Department of Materials Science and Engineering, University of Utah, Salt Lake City, USA, Collaborative Innovation Center of Quantum Matter
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1467537
Grant/Contract Number:  
FG02-04ER46148
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Nanoscale
Additional Journal Information:
Journal Name: Nanoscale Journal Volume: 10 Journal Issue: 35; Journal ID: ISSN 2040-3364
Publisher:
Royal Society of Chemistry (RSC)
Country of Publication:
United Kingdom
Language:
English

Citation Formats

Zhang, Chunxiao, Huang, Huaqing, Ni, Xiaojuan, Zhou, Yinong, Kang, Lei, Jiang, Wei, Chen, Haiyuan, Zhong, Jianxin, and Liu, Feng. Band gap reduction in van der Waals layered 2D materials via a de-charge transfer mechanism. United Kingdom: N. p., 2018. Web. doi:10.1039/C8NR04660C.
Zhang, Chunxiao, Huang, Huaqing, Ni, Xiaojuan, Zhou, Yinong, Kang, Lei, Jiang, Wei, Chen, Haiyuan, Zhong, Jianxin, & Liu, Feng. Band gap reduction in van der Waals layered 2D materials via a de-charge transfer mechanism. United Kingdom. https://doi.org/10.1039/C8NR04660C
Zhang, Chunxiao, Huang, Huaqing, Ni, Xiaojuan, Zhou, Yinong, Kang, Lei, Jiang, Wei, Chen, Haiyuan, Zhong, Jianxin, and Liu, Feng. Mon . "Band gap reduction in van der Waals layered 2D materials via a de-charge transfer mechanism". United Kingdom. https://doi.org/10.1039/C8NR04660C.
@article{osti_1467537,
title = {Band gap reduction in van der Waals layered 2D materials via a de-charge transfer mechanism},
author = {Zhang, Chunxiao and Huang, Huaqing and Ni, Xiaojuan and Zhou, Yinong and Kang, Lei and Jiang, Wei and Chen, Haiyuan and Zhong, Jianxin and Liu, Feng},
abstractNote = {The critical role of de-charge transfer in tuning the band gap of layered 2D materials.},
doi = {10.1039/C8NR04660C},
journal = {Nanoscale},
number = 35,
volume = 10,
place = {United Kingdom},
year = {Mon Jan 01 00:00:00 EST 2018},
month = {Mon Jan 01 00:00:00 EST 2018}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1039/C8NR04660C

Citation Metrics:
Cited by: 17 works
Citation information provided by
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