Dislocation Networks and the Microstructural Origin of Strain Hardening
Abstract
In this paper, when metals plastically deform, the density of line defects called dislocations increases and the microstructure is continuously refined, leading to the strain hardening behavior. Using discrete dislocation dynamics simulations, we demonstrate the fundamental role of junction formation in connecting dislocation microstructure evolution and strain hardening in face-centered cubic (fcc) Cu. The dislocation network formed consists of line segments whose lengths closely follow an exponential distribution. This exponential distribution is a consequence of junction formation, which can be modeled as a one-dimensional Poisson process. According to the exponential distribution, two non-dimensional parameters control microstructure evolution, with the hardening rate dictated by the rate of stable junction formation. Among the types of junctions in fcc crystals, we find that glissile junctions make the dominant contribution to strain hardening.
- Authors:
-
- Sandia National Lab. (SNL-CA), Livermore, CA (United States); Stanford Univ., Stanford, CA (United States)
- Stanford Univ., Stanford, CA (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1466762
- Alternate Identifier(s):
- OSTI ID: 1465262
- Report Number(s):
- SAND-2018-9021J
Journal ID: ISSN 0031-9007; PRLTAO; 667178
- Grant/Contract Number:
- AC04-94AL85000; SC0010412; NA0003525
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Letters
- Additional Journal Information:
- Journal Volume: 121; Journal Issue: 8; Journal ID: ISSN 0031-9007
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Sills, Ryan B., Bertin, Nicolas, Aghaei, Amin, and Cai, Wei. Dislocation Networks and the Microstructural Origin of Strain Hardening. United States: N. p., 2018.
Web. doi:10.1103/PhysRevLett.121.085501.
Sills, Ryan B., Bertin, Nicolas, Aghaei, Amin, & Cai, Wei. Dislocation Networks and the Microstructural Origin of Strain Hardening. United States. https://doi.org/10.1103/PhysRevLett.121.085501
Sills, Ryan B., Bertin, Nicolas, Aghaei, Amin, and Cai, Wei. Mon .
"Dislocation Networks and the Microstructural Origin of Strain Hardening". United States. https://doi.org/10.1103/PhysRevLett.121.085501. https://www.osti.gov/servlets/purl/1466762.
@article{osti_1466762,
title = {Dislocation Networks and the Microstructural Origin of Strain Hardening},
author = {Sills, Ryan B. and Bertin, Nicolas and Aghaei, Amin and Cai, Wei},
abstractNote = {In this paper, when metals plastically deform, the density of line defects called dislocations increases and the microstructure is continuously refined, leading to the strain hardening behavior. Using discrete dislocation dynamics simulations, we demonstrate the fundamental role of junction formation in connecting dislocation microstructure evolution and strain hardening in face-centered cubic (fcc) Cu. The dislocation network formed consists of line segments whose lengths closely follow an exponential distribution. This exponential distribution is a consequence of junction formation, which can be modeled as a one-dimensional Poisson process. According to the exponential distribution, two non-dimensional parameters control microstructure evolution, with the hardening rate dictated by the rate of stable junction formation. Among the types of junctions in fcc crystals, we find that glissile junctions make the dominant contribution to strain hardening.},
doi = {10.1103/PhysRevLett.121.085501},
journal = {Physical Review Letters},
number = 8,
volume = 121,
place = {United States},
year = {Mon Aug 20 00:00:00 EDT 2018},
month = {Mon Aug 20 00:00:00 EDT 2018}
}
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