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Title: Dislocation Networks and the Microstructural Origin of Strain Hardening

Abstract

In this paper, when metals plastically deform, the density of line defects called dislocations increases and the microstructure is continuously refined, leading to the strain hardening behavior. Using discrete dislocation dynamics simulations, we demonstrate the fundamental role of junction formation in connecting dislocation microstructure evolution and strain hardening in face-centered cubic (fcc) Cu. The dislocation network formed consists of line segments whose lengths closely follow an exponential distribution. This exponential distribution is a consequence of junction formation, which can be modeled as a one-dimensional Poisson process. According to the exponential distribution, two non-dimensional parameters control microstructure evolution, with the hardening rate dictated by the rate of stable junction formation. Among the types of junctions in fcc crystals, we find that glissile junctions make the dominant contribution to strain hardening.

Authors:
 [1];  [2];  [2];  [2]
  1. Sandia National Lab. (SNL-CA), Livermore, CA (United States); Stanford Univ., Stanford, CA (United States)
  2. Stanford Univ., Stanford, CA (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1466762
Alternate Identifier(s):
OSTI ID: 1465262
Report Number(s):
SAND-2018-9021J
Journal ID: ISSN 0031-9007; PRLTAO; 667178
Grant/Contract Number:  
AC04-94AL85000; SC0010412; NA0003525
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 121; Journal Issue: 8; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Sills, Ryan B., Bertin, Nicolas, Aghaei, Amin, and Cai, Wei. Dislocation Networks and the Microstructural Origin of Strain Hardening. United States: N. p., 2018. Web. doi:10.1103/PhysRevLett.121.085501.
Sills, Ryan B., Bertin, Nicolas, Aghaei, Amin, & Cai, Wei. Dislocation Networks and the Microstructural Origin of Strain Hardening. United States. doi:10.1103/PhysRevLett.121.085501.
Sills, Ryan B., Bertin, Nicolas, Aghaei, Amin, and Cai, Wei. Mon . "Dislocation Networks and the Microstructural Origin of Strain Hardening". United States. doi:10.1103/PhysRevLett.121.085501. https://www.osti.gov/servlets/purl/1466762.
@article{osti_1466762,
title = {Dislocation Networks and the Microstructural Origin of Strain Hardening},
author = {Sills, Ryan B. and Bertin, Nicolas and Aghaei, Amin and Cai, Wei},
abstractNote = {In this paper, when metals plastically deform, the density of line defects called dislocations increases and the microstructure is continuously refined, leading to the strain hardening behavior. Using discrete dislocation dynamics simulations, we demonstrate the fundamental role of junction formation in connecting dislocation microstructure evolution and strain hardening in face-centered cubic (fcc) Cu. The dislocation network formed consists of line segments whose lengths closely follow an exponential distribution. This exponential distribution is a consequence of junction formation, which can be modeled as a one-dimensional Poisson process. According to the exponential distribution, two non-dimensional parameters control microstructure evolution, with the hardening rate dictated by the rate of stable junction formation. Among the types of junctions in fcc crystals, we find that glissile junctions make the dominant contribution to strain hardening.},
doi = {10.1103/PhysRevLett.121.085501},
journal = {Physical Review Letters},
number = 8,
volume = 121,
place = {United States},
year = {2018},
month = {8}
}

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