Search Menu
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information
Search Scholarly Publications

Title: Extreme ultraviolet mask roughness effects in high numerical aperture lithography

Abstract

Given the reflective nature of extreme ultraviolet lithography and its extremely short operational wavelength, roughness of the optical surfaces is of significant concern. In particular, roughness in the mask multilayer leads to image plane speckle and ultimately patterned line-edge or line-width variability in the imaging process. Here we consider the implications of this effect for future high numerical aperture (NA) systems that are assumed to require anamorphic magnification projection optics. The results show significant anisotropic behavior at high NA as well as a substantial increase in relative patterned line variability in the shadowed direction when comparing 0.55 NA to 0.33 NA, despite the assumption of an anamorphic magnification system. In conclusion, the shadowed-direction patterned line variability is 2× larger than for unshadowed lines, and the majority of the increase in variability occurs in the low frequency regime.

Authors:
 [1];  [2];  [3]
+ Show Author Affiliations
  1. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  2. Univ. of California, Berkeley, CA (United States)
  3. Panoramic Technology Inc., Burlingame, CA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
SC-22.2 USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE
OSTI Identifier:
1466716
Alternate Identifier(s):
OSTI ID: 1423166
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Applied Optics
Additional Journal Information:
Journal Volume: 57; Journal Issue: 7; Related Information: © 2018 Optical Society of America.; Journal ID: ISSN 1559-128X
Publisher:
Optical Society of America
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION; photolithography; ultraviolet; X-ray; soft X-rays; extreme ultraviolet (EUV)

Citation Formats

Naulleau, Patrick, Wang, Yow -Gwo, and Pistor, Tom. Extreme ultraviolet mask roughness effects in high numerical aperture lithography. United States: N. p., 2018. Web. doi:10.1364/AO.57.001724.
Copy to clipboard
Naulleau, Patrick, Wang, Yow -Gwo, & Pistor, Tom. Extreme ultraviolet mask roughness effects in high numerical aperture lithography. United States. https://doi.org/10.1364/AO.57.001724
Copy to clipboard
Naulleau, Patrick, Wang, Yow -Gwo, and Pistor, Tom. Thu . "Extreme ultraviolet mask roughness effects in high numerical aperture lithography". United States. https://doi.org/10.1364/AO.57.001724. https://www.osti.gov/servlets/purl/1466716.
Copy to clipboard
@article{osti_1466716,
title = {Extreme ultraviolet mask roughness effects in high numerical aperture lithography},
author = {Naulleau, Patrick and Wang, Yow -Gwo and Pistor, Tom},
abstractNote = {Given the reflective nature of extreme ultraviolet lithography and its extremely short operational wavelength, roughness of the optical surfaces is of significant concern. In particular, roughness in the mask multilayer leads to image plane speckle and ultimately patterned line-edge or line-width variability in the imaging process. Here we consider the implications of this effect for future high numerical aperture (NA) systems that are assumed to require anamorphic magnification projection optics. The results show significant anisotropic behavior at high NA as well as a substantial increase in relative patterned line variability in the shadowed direction when comparing 0.55 NA to 0.33 NA, despite the assumption of an anamorphic magnification system. In conclusion, the shadowed-direction patterned line variability is 2× larger than for unshadowed lines, and the majority of the increase in variability occurs in the low frequency regime.},
doi = {10.1364/AO.57.001724},
journal = {Applied Optics},
number = 7,
volume = 57,
place = {United States},
year = {Thu Mar 01 00:00:00 EST 2018},
month = {Thu Mar 01 00:00:00 EST 2018}
}
Copy to clipboard
Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1364/AO.57.001724
Copyright Statement
Other availability
Search WorldCat Search WorldCat to find libraries that may hold this journal
Citation Metrics:
Cited by: 5 works
Citation information provided by
Web of Science
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Works referenced in this record:

Practical approach for modeling extreme ultraviolet lithography mask defects
journal, January 2002

  • Gullikson, E. M.; Cerjan, C.; Stearns, D. G.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 20, Issue 1
  • DOI: 10.1116/1.1428269

EUV lithography optics for sub-9nm resolution
conference, March 2015

  • Kneer, Bernhard; Migura, Sascha; Kaiser, Winfried
  • SPIE Advanced Lithography, SPIE Proceedings
  • DOI: 10.1117/12.2175488

Nonspecular scattering from extreme ultraviolet multilayer coatings
journal, June 2000

Mask roughness challenges in extreme ultraviolet mask development
journal, November 2011

  • Naulleau, Patrick; McClinton, Brittany; Goldberg, Kenneth A.
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 29, Issue 6
  • DOI: 10.1116/1.3632989

The future of EUV lithography: enabling Moore's Law in the next decade
conference, March 2017

  • Pirati, Alberto; van Schoot, Jan; Troost, Kars
  • SPIE Advanced Lithography, SPIE Proceedings
  • DOI: 10.1117/12.2261079

Layered synthetic microstructures as Bragg diffractors for X rays and extreme ultraviolet: theory and predicted performance
journal, January 1981

Soft x-ray projection lithography using an x-ray reduction camera
journal, November 1988

  • Hawryluk, Andrew M.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 6, Issue 6
  • DOI: 10.1116/1.584107

Validity of the thin mask approximation in extreme ultraviolet mask roughness simulations
journal, January 2011

The Paths To Subhalf-Micrometer Optical Lithography
conference, January 1988

  • Lin, Burn J.; Lin, Burn J.
  • 1988 Microlithography Conferences, SPIE Proceedings
  • DOI: 10.1117/12.968423

Review on Micro- and Nanolithography Techniques and their Applications
journal, January 2012

Optical lithography: Introduction
journal, January 1997

  • Chiu, G. L. -T.; Shaw, J. M.
  • IBM Journal of Research and Development, Vol. 41, Issue 1.2
  • DOI: 10.1147/rd.411.0003

Correlation method for the measure of mask-induced line-edge roughness in extreme ultraviolet lithography
journal, January 2009

EUV progress toward HVM readiness
conference, March 2016

  • Turkot, Britt; Carson, Steven L.; Lio, Anna
  • SPIE Advanced Lithography, SPIE Proceedings
  • DOI: 10.1117/12.2225014

Spatial scaling metrics of mask-induced line-edge roughness
journal, November 2008

  • Naulleau, Patrick P.; Gallatin, Gregg
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 26, Issue 6
  • DOI: 10.1116/1.3010712

Imaging properties of the extreme ultraviolet mask
journal, November 1998

  • Bollepalli, B. S.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 16, Issue 6
  • DOI: 10.1116/1.590475

Lithographic flare measurements of EUV full-field projection optics
conference, June 2003

  • Lee, Sang Hun; Naulleau, Patrick; Krautschik, Christof
  • Microlithography 2003, SPIE Proceedings
  • DOI: 10.1117/12.485547

Stochastic model for thin film growth and erosion
journal, April 1993

  • Stearns, D. G.
  • Applied Physics Letters, Vol. 62, Issue 15
  • DOI: 10.1063/1.109593

Amplitude versus phase effects in extreme ultraviolet lithography mask scattering and imaging
journal, January 2017

  • Naulleau, Patrick P.; Benk, Markus; Goldberg, Kenneth A.
  • Applied Optics, Vol. 56, Issue 12
  • DOI: 10.1364/AO.56.003325

Effects of mask roughness and condenser scattering in EUVL systems
conference, June 1999

  • Beaudry, Neil A.; Milster, Tomas D.
  • Microlithography '99, SPIE Proceedings
  • DOI: 10.1117/12.351140

Replicated mask surface roughness effects on EUV lithographic patterning and line edge roughness
conference, March 2011

  • George, Simi A.; Naulleau, Patrick P.; Gullikson, Eric M.
  • SPIE Advanced Lithography, SPIE Proceedings
  • DOI: 10.1117/12.881524

EUV masks under exposure: practical considerations
conference, March 2011

  • Gallagher, Emily; McIntyre, Gregory; Wallow, Tom
  • SPIE Advanced Lithography, SPIE Proceedings
  • DOI: 10.1117/12.880755

Implications of image plane line-edge roughness requirements on extreme ultraviolet mask specifications
conference, May 2009

  • Naulleau, Patrick P.; George, Simi A.
  • Photomask and NGL Mask Technology XVI, SPIE Proceedings
  • DOI: 10.1117/12.824265

Extreme ultraviolet mask roughness: requirements, characterization, and modeling
conference, July 2014

  • Naulleau, Patrick; Bhattaria, Suchit; Chao, Rick
  • Photomask Japan 2014, SPIE Proceedings
  • DOI: 10.1117/12.2070303
    Sort by:
    [ × clear filter / sort ]

    Similar Records in DOE PAGES and OSTI.GOV collections: