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Title: Designing antiphase boundaries by atomic control of heterointerfaces

Abstract

Extended defects are known to have critical influences in achieving desired material performance. However, the nature of extended defect generation is highly elusive due to the presence of multiple nucleation mechanisms with close energetics. A strategy to design extended defects in a simple and clean way is thus highly desirable to advance the understanding of their role, improve material quality, and serve as a unique playground to discover new phenomena. In this work, we report an approach to create planar extended defects—antiphase boundaries (APB) —with well-defined origins via the combination of advanced growth, atomic-resolved electron microscopy, first-principals calculations, and defect theory. In La 2/3 Sr 1/3 MnO 3 thin film grown on Sr 2 RuO 4 substrate, APBs in the film naturally nucleate at the step on the substrate/film interface. For a single step, the generated APBs tend to be nearly perpendicular to the interface and propragate toward the film surface. Interestingly, when two steps are close to each other, two corresponding APBs communicate and merge together, forming a unique triangle-shaped defect domain boundary. Such behavior has been ascribed, in general, to the minimization of the surface energy of the APB. Atomic-resolved electron microscopy shows that these APBs have anmore » intriguing antipolar structure phase, thus having the potential as a general recipe to achieve ferroelectric-like domain walls for high-density nonvolatile memory.« less

Authors:
; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1464332
Alternate Identifier(s):
OSTI ID: 1480961
Report Number(s):
BNL-209361-2018-JAAM
Journal ID: ISSN 0027-8424; /pnas/115/38/9485.atom
Grant/Contract Number:  
SC0002136; AC02-98CH10886; SC0012704
Resource Type:
Published Article
Journal Name:
Proceedings of the National Academy of Sciences of the United States of America
Additional Journal Information:
Journal Name: Proceedings of the National Academy of Sciences of the United States of America Journal Volume: 115 Journal Issue: 38; Journal ID: ISSN 0027-8424
Publisher:
Proceedings of the National Academy of Sciences
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; antiphase boundary; extended defect nucleation; interface; selectron microscopy; theory

Citation Formats

Wang, Zhen, Guo, Hangwen, Shao, Shuai, Saghayezhian, Mohammad, Li, Jun, Fittipaldi, Rosalba, Vecchione, Antonio, Siwakoti, Prahald, Zhu, Yimei, Zhang, Jiandi, and Plummer, E. W. Designing antiphase boundaries by atomic control of heterointerfaces. United States: N. p., 2018. Web. doi:10.1073/pnas.1808812115.
Wang, Zhen, Guo, Hangwen, Shao, Shuai, Saghayezhian, Mohammad, Li, Jun, Fittipaldi, Rosalba, Vecchione, Antonio, Siwakoti, Prahald, Zhu, Yimei, Zhang, Jiandi, & Plummer, E. W. Designing antiphase boundaries by atomic control of heterointerfaces. United States. doi:10.1073/pnas.1808812115.
Wang, Zhen, Guo, Hangwen, Shao, Shuai, Saghayezhian, Mohammad, Li, Jun, Fittipaldi, Rosalba, Vecchione, Antonio, Siwakoti, Prahald, Zhu, Yimei, Zhang, Jiandi, and Plummer, E. W. Mon . "Designing antiphase boundaries by atomic control of heterointerfaces". United States. doi:10.1073/pnas.1808812115.
@article{osti_1464332,
title = {Designing antiphase boundaries by atomic control of heterointerfaces},
author = {Wang, Zhen and Guo, Hangwen and Shao, Shuai and Saghayezhian, Mohammad and Li, Jun and Fittipaldi, Rosalba and Vecchione, Antonio and Siwakoti, Prahald and Zhu, Yimei and Zhang, Jiandi and Plummer, E. W.},
abstractNote = {Extended defects are known to have critical influences in achieving desired material performance. However, the nature of extended defect generation is highly elusive due to the presence of multiple nucleation mechanisms with close energetics. A strategy to design extended defects in a simple and clean way is thus highly desirable to advance the understanding of their role, improve material quality, and serve as a unique playground to discover new phenomena. In this work, we report an approach to create planar extended defects—antiphase boundaries (APB) —with well-defined origins via the combination of advanced growth, atomic-resolved electron microscopy, first-principals calculations, and defect theory. In La 2/3 Sr 1/3 MnO 3 thin film grown on Sr 2 RuO 4 substrate, APBs in the film naturally nucleate at the step on the substrate/film interface. For a single step, the generated APBs tend to be nearly perpendicular to the interface and propragate toward the film surface. Interestingly, when two steps are close to each other, two corresponding APBs communicate and merge together, forming a unique triangle-shaped defect domain boundary. Such behavior has been ascribed, in general, to the minimization of the surface energy of the APB. Atomic-resolved electron microscopy shows that these APBs have an intriguing antipolar structure phase, thus having the potential as a general recipe to achieve ferroelectric-like domain walls for high-density nonvolatile memory.},
doi = {10.1073/pnas.1808812115},
journal = {Proceedings of the National Academy of Sciences of the United States of America},
number = 38,
volume = 115,
place = {United States},
year = {2018},
month = {8}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1073/pnas.1808812115

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Cited by: 4 works
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