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Title: High-efficiency flexible III-V photovoltaic solar cells based on single-crystal-like thin films directly grown on metallic tapes

Abstract

Abstract This study demonstrates the first flexible single‐junction III‐V photovoltaic solar cells (SCs) based on single‐crystal‐like gallium arsenide (GaAs) thin films on a low‐cost metal substrate by direct and continuous deposition, which can bypass expensive single crystal wafer fabrication. The two‐dimensional modeling of the GaAs SC is developed and used to study feasibility of single‐crystal‐like GaAs thin films for high performance SC devices. A promising SC device performance characteristic with an open‐circuit voltage of 560 mV and short circuit current of 19.4 mA/cm 2 , resulting in a conversion efficiency of ~7.6%, is demonstrated.

Authors:
 [1];  [2];  [1];  [3];  [2];  [2];  [1];  [1];  [1];  [1];  [1];  [3];  [2]; ORCiD logo [2]
+ Show Author Affiliations
  1. Univ. of Houston, TX (United States). Advanced Manufacturing Inst.; Univ. of Houston, TX (United States)
  2. Univ. of Houston, TX (United States). Advanced Manufacturing Inst.; Univ. of Houston, TX (United States); Univ. of Houston, TX (United States). Texas Center for Superconductivity at UH (TcSUH)
  3. Univ. of Houston, TX (United States)
Publication Date:
Research Org.:
Univ. of Houston, TX (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1613373
Alternate Identifier(s):
OSTI ID: 1463191
Grant/Contract Number:  
EE0006711; DEEE0006711
Resource Type:
Accepted Manuscript
Journal Name:
Progress in Photovoltaics
Additional Journal Information:
Journal Volume: 27; Journal Issue: 1; Journal ID: ISSN 1062-7995
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; direct deposition; flexible devices; photovoltaic solar cells; roll-to-roll process; single-crystal-like semiconductor materials

Citation Formats

Pouladi, Sara, Rathi, Monika, Khatiwada, Devendra, Asadirad, Mojtaba, Oh, Seung Kyu, Dutta, Pavel, Yao, Yao, Gao, Ying, Sun, Sicong, Li, Yongkuan, Shervin, Shahab, Lee, Keon-Hwa, Selvamanickam, Venkat, and Ryou, Jae-Hyun. High-efficiency flexible III-V photovoltaic solar cells based on single-crystal-like thin films directly grown on metallic tapes. United States: N. p., 2018. Web. doi:10.1002/pip.3070.
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Pouladi, Sara, Rathi, Monika, Khatiwada, Devendra, Asadirad, Mojtaba, Oh, Seung Kyu, Dutta, Pavel, Yao, Yao, Gao, Ying, Sun, Sicong, Li, Yongkuan, Shervin, Shahab, Lee, Keon-Hwa, Selvamanickam, Venkat, & Ryou, Jae-Hyun. High-efficiency flexible III-V photovoltaic solar cells based on single-crystal-like thin films directly grown on metallic tapes. United States. https://doi.org/10.1002/pip.3070
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Pouladi, Sara, Rathi, Monika, Khatiwada, Devendra, Asadirad, Mojtaba, Oh, Seung Kyu, Dutta, Pavel, Yao, Yao, Gao, Ying, Sun, Sicong, Li, Yongkuan, Shervin, Shahab, Lee, Keon-Hwa, Selvamanickam, Venkat, and Ryou, Jae-Hyun. Mon . "High-efficiency flexible III-V photovoltaic solar cells based on single-crystal-like thin films directly grown on metallic tapes". United States. https://doi.org/10.1002/pip.3070. https://www.osti.gov/servlets/purl/1613373.
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@article{osti_1613373,
title = {High-efficiency flexible III-V photovoltaic solar cells based on single-crystal-like thin films directly grown on metallic tapes},
author = {Pouladi, Sara and Rathi, Monika and Khatiwada, Devendra and Asadirad, Mojtaba and Oh, Seung Kyu and Dutta, Pavel and Yao, Yao and Gao, Ying and Sun, Sicong and Li, Yongkuan and Shervin, Shahab and Lee, Keon-Hwa and Selvamanickam, Venkat and Ryou, Jae-Hyun},
abstractNote = {Abstract This study demonstrates the first flexible single‐junction III‐V photovoltaic solar cells (SCs) based on single‐crystal‐like gallium arsenide (GaAs) thin films on a low‐cost metal substrate by direct and continuous deposition, which can bypass expensive single crystal wafer fabrication. The two‐dimensional modeling of the GaAs SC is developed and used to study feasibility of single‐crystal‐like GaAs thin films for high performance SC devices. A promising SC device performance characteristic with an open‐circuit voltage of 560 mV and short circuit current of 19.4 mA/cm 2 , resulting in a conversion efficiency of ~7.6%, is demonstrated.},
doi = {10.1002/pip.3070},
journal = {Progress in Photovoltaics},
number = 1,
volume = 27,
place = {United States},
year = {Mon Aug 06 00:00:00 EDT 2018},
month = {Mon Aug 06 00:00:00 EDT 2018}
}
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