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Title: Strain-Driven Stacking Faults in CdSe/CdS Core/Shell Nanorods

Abstract

Colloidal semiconductor nanocrystals are commonly grown with a shell of a second semiconductor material to obtain desired physical properties, such as increased photoluminescence quantum yield. However, the growth of a lattice-mismatched shell results in strain within the nanocrystal, and this strain has the potential to produce crystalline defects. Here in this paper, we study CdSe/CdS core/shell nanorods as a model system to investigate the influence of core size and shape on the formation of stacking faults in the nanocrystal. Using a combination of high-angle annular dark-field scanning transmission electron microscopy and pair-distribution-function analysis of synchrotron X-ray scattering, we show that growth of the CdS shell on smaller, spherical CdSe cores results in relatively small strain and few stacking faults. By contrast, growth of the shell on larger, prolate spheroidal cores leads to significant strain in the CdS lattice, resulting in a high density of stacking faults.

Authors:
 [1];  [2]; ORCiD logo [3]; ORCiD logo [4];  [4];  [5];  [2];  [4]; ORCiD logo [6]; ORCiD logo [5]
  1. Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials; Univ. Picardie Jules Verne, Amiens (France). Lab. de Reactivite et Chimie des Solides (LRCS); Réseau sur le Stockage Electrochimique de l’Energie (RS2E), Amiens (France)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
  3. Central Michigan Univ., Mount Pleasant, MI (United States). Dept. of Physics
  4. Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
  5. Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
  6. Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials; Univ. of Maryland, Baltimore, MD (United States). Dept. of Physics
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1460204
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Physical Chemistry Letters
Additional Journal Information:
Journal Volume: 9; Journal Issue: 8; Journal ID: ISSN 1948-7185
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Demortiere, Arnaud, Leonard, Donovan N., Petkov, Valeri, Chapman, Karena, Chattopadhyay, Soma, She, Chunxing, Cullen, David A., Shibata, Tomohiro, Pelton, Matthew, and Shevchenko, Elena V. Strain-Driven Stacking Faults in CdSe/CdS Core/Shell Nanorods. United States: N. p., 2018. Web. doi:10.1021/acs.jpclett.8b00914.
Demortiere, Arnaud, Leonard, Donovan N., Petkov, Valeri, Chapman, Karena, Chattopadhyay, Soma, She, Chunxing, Cullen, David A., Shibata, Tomohiro, Pelton, Matthew, & Shevchenko, Elena V. Strain-Driven Stacking Faults in CdSe/CdS Core/Shell Nanorods. United States. doi:10.1021/acs.jpclett.8b00914.
Demortiere, Arnaud, Leonard, Donovan N., Petkov, Valeri, Chapman, Karena, Chattopadhyay, Soma, She, Chunxing, Cullen, David A., Shibata, Tomohiro, Pelton, Matthew, and Shevchenko, Elena V. Wed . "Strain-Driven Stacking Faults in CdSe/CdS Core/Shell Nanorods". United States. doi:10.1021/acs.jpclett.8b00914. https://www.osti.gov/servlets/purl/1460204.
@article{osti_1460204,
title = {Strain-Driven Stacking Faults in CdSe/CdS Core/Shell Nanorods},
author = {Demortiere, Arnaud and Leonard, Donovan N. and Petkov, Valeri and Chapman, Karena and Chattopadhyay, Soma and She, Chunxing and Cullen, David A. and Shibata, Tomohiro and Pelton, Matthew and Shevchenko, Elena V.},
abstractNote = {Colloidal semiconductor nanocrystals are commonly grown with a shell of a second semiconductor material to obtain desired physical properties, such as increased photoluminescence quantum yield. However, the growth of a lattice-mismatched shell results in strain within the nanocrystal, and this strain has the potential to produce crystalline defects. Here in this paper, we study CdSe/CdS core/shell nanorods as a model system to investigate the influence of core size and shape on the formation of stacking faults in the nanocrystal. Using a combination of high-angle annular dark-field scanning transmission electron microscopy and pair-distribution-function analysis of synchrotron X-ray scattering, we show that growth of the CdS shell on smaller, spherical CdSe cores results in relatively small strain and few stacking faults. By contrast, growth of the shell on larger, prolate spheroidal cores leads to significant strain in the CdS lattice, resulting in a high density of stacking faults.},
doi = {10.1021/acs.jpclett.8b00914},
journal = {Journal of Physical Chemistry Letters},
number = 8,
volume = 9,
place = {United States},
year = {2018},
month = {3}
}

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Works referencing / citing this record:

Influence of annealing temperature on microstructure and photoelectric properties of ternary CdSe@CdS@TiO2 core–shell heterojunctions
journal, May 2019

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